Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Size: px

Start display at page:

Download "Qualified for industrial applications according to the relevant tests of JEDEC47/20/22"

Clifton Johnston
6 years ago
Views:

Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers.

Features For high voltage applications V CE < 2 V Maximal power P tot = 7 mw Transition frequency f T = 7.5 GHz Noise figure NF min =.

1 Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. Features For high voltage applications V CE < 2 V Maximal power P tot = 7 mw Transition frequency f T = 7.5 GHz Noise figure NF min =.3 db at 9 MHz Easy to use Pb-free (RoHS compliant) and halogen-free industry standard SOT343 package with visible leads 2 3 Application GNSS active antenna Amplifiers in antenna and telecommunications systems CATV Power amplifier for DECT and PCN systems Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2/22 Device information, 4 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Type / Ordering code Package Pin configuration Marking Related Links BFP96WN / BFP96WNH6327XTSA SOT343 =E 2=C 3=B 4=E RLs see SOT343 Package Preliminary datasheet Please read the Important Notice and Warnings at the end of this document Revision.

2 Table of contents Table of contents Product description Features Application Product validation Device information Table of contents Absolute maximum ratings Thermal characteristics DC parameter table AC parameter tables Characteristic DC diagrams Characteristic AC diagrams SOT343 Package Revision history Trademarks Preliminary datasheet 2 Revision.

3 Absolute maximum ratings Absolute maximum ratings Table Absolute maximum ratings at T A = 25 C (unless otherwise specified) Parameter Symbol Values Unit Note or Test condition Min. Max. Collector emitter voltage V CEO 2 V Base open Collector emitter voltage V CES 2 V Emitter / base short circuited Collector base voltage V CBO 2 V Emitter open Emitter base voltage V EBO 2 V Collector open DC collector current I C 5 ma DC base current 5 ma Total power P tot 7 mw Junction temperature T J 5 C Storage temperature T Stg C Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. Preliminary datasheet 3 Revision.

4 Thermal characteristics 2 Thermal characteristics Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Junction - soldering point R thjs 5 K/W ) Figure Absolute maximum power dissipation P tot vs. T s Note: In the horizontal part of the above curve the junction temperature T J is lower than T J,max. In the declining slope it is T J = T J,max. P tot has to be reduced according to the curve in order not to exceed T J,max. It is T J,max = T S + P tot * R THJS. For the definition of R thjs please refer to the application note AN77 Preliminary datasheet 4 Revision.

5 3 3. DC parameter table Table 3 DC characteristics at T A = 25 C Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Collector emitter breakdown voltage V CEO 2 V I C = ma, open base Collector emitter leakage current I CES μa V CE = 2 V, V BE = V Emitter / base short circuited Collector base leakage current I CBO na V CB = V, V BE = Open emitter Emitter base leakage current I EBO μa V EB = V, I C = Open collector DC current gain h FE 7 4 V CE = 8 V, I C = 5 ma Pulse measured 3.2 AC parameter tables Table 4 General AC characteristics at T A = 25 C Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Transition frequency f T GHz V CE = 8 V, I C = 9 ma, f=5 MHz Collector base capacitance C CB.9 pf V CB = V, V BE = V, f = MHz Emitter grounded Collector emitter capacitance C CE.35 pf V CE = V, V BE = V, f = MHz Base grounded Emitter base capacitance C EB 3.8 pf V EB =.5 V, V CB = V, f = MHz Collector grounded Preliminary datasheet 5 Revision.

6 Measurement setup for the AC characteristics shown in the following tables is a test fixture with Bias T s in a 5 Ω system, T A = 25 C. VBE VCE RFIN Bias-T 3 2 Bias-T RFOUT 4 GND Figure 2 BFP96WN testing circuit Table 5 AC characteristics, V CE = 8 V, f =.45 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin.95 db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP dbm I C = 5 ma Table 6 AC characteristics, V CE = 8 V, f =.9 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin. db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP dbm I C = 5 ma Preliminary datasheet 6 Revision.

7 Table 7 AC characteristics, V CE = 8 V, f =.5 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin.7 db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP dbm I C = 5 ma Table 8 AC characteristics, V CE = 8 V, f =.9 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max. 6.5 db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin 2. db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP dbm I C = 5 ma Table 9 AC characteristics, V CE = 5 V, f = 2.4 GHz Parameter Symbol Values Unit Note or test condition Power gain Maximum power gain Transducer gain G ms S 2 2 Min. Typ. Max db I C = 5 ma Z s = Z Sopt, Z L = Z Lopt Minimum noise figure NFmin 2.5 db I C = 2 ma, Z S = Z Sopt Linearity db compression point at output 3rd order intercept point at output OPdB OIP dbm I C = 5 ma Preliminary datasheet 7 Revision.

8 3.3 Characteristic DC diagrams 2 =853 µa =768 µa I C [ma] =682 µa =597 µa =52 µa =427 µa =34 µa =256 µa =7 µa =85 µa V CE [V] Figure 3 Collector current I C = f(v CE ), = parameter hfe I C [A] Figure 4 Current gain h FE = f(i C ), V CE = 8 V Preliminary datasheet 8 Revision.

9 I C [A] V BE [V] Figure 5 Collector current I C = f(v BE ), V CE = 8 V [A] V BE [V] Figure 6 Base current = f(v BE ), V CE = 8 V Preliminary datasheet 9 Revision.

10 [A] V EB [V] Figure 7 Base/emitter leakage current = f(v EB ), V CE = 8 V Note: Regard absolute maximum ratings for I C, V CE and P tot (see Table ) Preliminary datasheet Revision.

11 3.4 Characteristic AC diagrams 8 8V 7 6 5V f T [GHz] V 3V 2V V I C [ma] Figure 8 Transition frequency f T = f(i C ), V CE = parameter 3 25 Gms 2 Gain [db] 5 Gma 5 S f [GHz] Figure 9 Gain G ms, G ma, IS 2 I 2 = f(f), I C = 5 ma, V CE = 8 V Preliminary datasheet Revision.

12 35 3.5GHz Gma [db] GHz.9GHz.5GHz.9GHz 2.4GHz 3.5GHz I C [ma] Figure Maximum power gain G max = f(i C ), V CE = 8 V, f = parameter GHz Gma [db] GHz.9GHz.5GHz.9GHz 2.4GHz 3.5GHz V CE [V] Figure Maximum power gain G max = f(v CE ), I C = 5 ma, f = parameter Preliminary datasheet 2 Revision.

13 to 6 GHz mA 5mA Figure 2 Output reflection coefficient S 22 = f(f) at V CE = 8 V, I C = 2, 5 ma to 6 GHz mA 5mA Figure 3 Input reflection coefficient S = f(f) at V CE = 8 V, I C = 2, 5 ma Preliminary datasheet 3 Revision.

14 to 2.4 GHz mA 5mA Figure 4 Source impedance for minimum noise figure Z Sopt = f(f), V CE = 8 V, I C = 2, 5 ma mA NF min [db] mA f [GHz] Figure 5 Noise figure N Fmin = f(f), V CE = 8 V, I C = 2, 5mA, Z S = Z Sopt Preliminary datasheet 4 Revision.

15 GHz 3.9GHz 2.5.5GHz NF min [db] 2.5.9GHz.45GHz I C [ma] Figure 6 Noise figure NF min = f(i C ), V CE = 8 V, f = parameter, Z S = Z Sopt mA NF5 [db] mA f [GHz] Figure 7 Noise figure NF 5 = f(f), V CE = 8 V, I C = 2, 5 ma, Z S = 5 Ω Preliminary datasheet 5 Revision.

16 GHz.9GHz.5GHz NF5 [db] 4 3.9GHz.45GHz I C [ma] Figure 8 Noise figure NF 5 = f(i C ), V CE = 8 V, f = parameter, Z S = 5 Ω Note: The curves shown in this chapter Characteristic AC diagrams have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. T A = 25 C. Preliminary datasheet 6 Revision.

17 SOT343 Package 4 SOT343 Package 4 2 ± MAX...9 ±. A x. M ±.. MIN..2 M A ±. SOT343-PO V8 Figure 9 SOT343 package outline (dimension in mm) Soldering Type: Reflow Soldering SOT343-FP V8 Figure 2 SOT343 footprint (dimension in mm) 25, June Date code (YM) Manufacturer Pin BGA42 Type code Figure 2 SOT343 marking layout Reel ø8 mm: 3. Pieces/Reel Reels/Box: x 3. = Reel ø33 mm:. Pieces/Reel Reels/Box: x. = Pin 2.5. SOT323-TP V2 Figure 22 SOT343 standard packing (dimension in mm) Preliminary datasheet 7 Revision.

18 Revision history Revision history Major changes since previous revision Reference Description Revision History: , Revision.9 rev.9 Preliminary datasheet Preliminary datasheet 8 Revision.

19 Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AU-ConvertIR, AURIX, C66, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC. Trademarks Update Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 27 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-kst IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

BSP752R. Features. Applications. Smart High-Side Power Switch

BSP752R. Features. Applications. Smart High-Side Power Switch Features Overload protection Current limitation Short circuit protection Thermal shutdown with restart Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery