Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications

Transcription

1 Product description The BGB74L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon s silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure NF min =.05 db at 2.4 GHz, 3 V, 0 ma Supply voltage range V CC =.8 to 4.0 V at T A = 25 C High RF input power robustness of 20 dbm Integrated ESD protection: 2 kv HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVB- Terrestrial Device information Table Part information Product name / Ordering code BGB74L7ESD / BGB74L7ESDE6327XTSA Package Pin configuration Marking Pieces / Reel TSLP-7- = V CC 2 = V Bias 3 = RF in 4 = RF out AY = V Ctrl 6 = Current adjust 7 = Ground Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v3.0

2 Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying V Ctrl. By using an external resistor R ext, the pre-set current of 5.5 ma (when R ext is omitted) can be increased. Base V B and collector V C voltages are applied to the respective pins RF in and RF out by external inductors L B and L C. DC, VCC R ext In Cin LB VCC Bias-Out RF-In 2 internal Biasing GND Current Adjust On/Off RF-Out 7 (on package backside) LC Cout Out DC, V ctrl BGB7XXL7ESD functional block Figure Functional block diagram Datasheet 2 v3.0

3 Table of contents Table of contents Product description Feature list Product validation Potential applications Device information Functional block diagram Table of contents Operating conditions Absolute maximum ratings Thermal characteristics DC characteristics Characteristic DC diagrams AC characteristics Package information TSLP Revision history Disclaimer Datasheet 3 v3.0

4 Operating conditions Operating conditions Table 2 Operation conditions at T A = 25 C Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Supply voltage V CC V Control voltage in on-mode V Ctrl-on.2 V CC Control voltage in off-mode V Ctrl-off Datasheet 4 v3.0

5 Absolute maximum ratings 2 Absolute maximum ratings Table 3 Absolute maximum ratings at T A = 25 C (unless otherwise specified) Parameter Symbol Values Unit Note or test condition Min. Max. Supply voltage V CC V T A = 25 C T A = -55 C Supply current I CC 30 ma DC current at RF in I B 3 Control voltage V Ctrl V CC V ESD stress pulse (HBM) V ESD +/- 2 kv RF input power P RFin 20 dbm Total power dissipation ) P tot 20 mw T S 7 C Junction temperature T J 50 C Storage temperature T Stg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the PCB Datasheet 5 v3.0

6 Thermal characteristics 3 Thermal characteristics Table 4 Thermal resistance Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Junction - soldering point R thjs 275 K/W Ptot [mw] Ts [ C] Figure 2 Total power dissipation P tot = f(t S ) Datasheet 6 v3.0

7 4 4. DC characteristics Table 5 DC characteristics at V CC = 3 V, T A = 25 C Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Supply current in on-mode I CC-on ma V Ctrl = 3 V R ext = open R ext = 30 kω R ext = 3 kω Supply current in off-mode I CC-off 6 μa V Ctrl = 0 V Control current in on-mode I Ctrl-on 4 20 V Ctrl = 3 V Control current in off-mode I Ctrl-off 0. V Ctrl = 0 V Datasheet 7 v3.0

8 4.2 Characteristic DC diagrams The measurement setup is an application circuit according to Figure on page 2, using the integrated biasing. T A = 25 C (unless otherwise specified). Figure 3 Supply current vs external resistance I CC = f(r ext ), V Ctrl = 3 V, V CC = parameter Figure 4 Supply current vs supply voltage I CC = f(v CC ), V Ctrl = 3 V, R ext = parameter Datasheet 8 v3.0

9 Figure 5 Supply current vs control voltage I CC = f(v Ctrl ), V CC = 3 V, R ext = parameter Figure 6 Supply current vs temperature I CC = f(t A ), V Ctrl = V CC = 3 V, R ext = open Datasheet 9 v3.0

10 4.3 AC characteristics The measurement setup is a test fixture with Bias-T s in a 50 Ω system, T A = 25 C. Top View VCC Current Adjust 6 VB 2 Bias- Out GND On/Off Control 5 VC In Bias-T RF-In RF-Out 3 4 Bias-T Out 7 Figure 7 Testing setup Datasheet 0 v3.0

11 Table 6 AC characteristics, V C = 3 V, f = 50 MHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² 9 2 Maximum stable power gain G ms Input db gain compression point IP db Input 3 rd order intercept point IIP Input return loss RL in 4 8 Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet v3.0

12 Table 7 AC characteristics, V C = 3 V, f = 450 MHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² Maximum available power gain G ma Input db gain compression point IP db Input 3 rd order intercept point IIP Input return loss RL in Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 2 v3.0

13 Table 8 AC characteristics, V C = 3 V, f = 900 MHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² Maximum available power gain G ma Input db gain compression point IP db -5-7 Input 3 rd order intercept point IIP Input return loss RL in Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 3 v3.0

14 Table 9 AC characteristics, V C = 3 V, f =.5 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min.05.0 db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² Maximum available power gain G ma Input db gain compression point IP db Input 3 rd order intercept point IIP Input return loss RL in Output return loss RL out 4 23 dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 4 v3.0

15 Table 0 AC characteristics, V C = 3 V, f =.9 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² Maximum available power gain G ma Input db gain compression point IP db -4-6 Input 3 rd order intercept point IIP Input return loss RL in Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 5 v3.0

16 Table AC characteristics, V C = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min..05 db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² Maximum available power gain G ma Input db gain compression point IP db Input 3 rd order intercept point IIP 3 3 Input return loss RL in Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 6 v3.0

17 Table 2 AC characteristics, V C = 3 V, f = 3.5 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min.25.2 db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² Maximum available power gain G ma Input db gain compression point IP db Input 3 rd order intercept point IIP Input return loss RL in Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 7 v3.0

18 Table 3 AC characteristics, V C = 3 V, f = 5.5 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Minimum noise figure ) NF min.8.75 db Z S = Z S,opt Noise figure in 50 Ω system 2) NF Transducer gain S 2 ² 2 3 Maximum available power gain G ma 4 5 Input db gain compression point IP db - -3 Input 3 rd order intercept point IIP Input return loss RL in 7 8 Output return loss RL out dbm db Z S = Z L = 50 Ω I Cq = 6 ma I Cq = 0 ma Test fixture losses are extracted 2 Parameter measured on an application board according to Figure on page 2 presenting a 50 Ω system to the device. I Cq is the quiescent current, that is at small RF input power level. I C increases as RF input power level approaches IP db. Datasheet 8 v3.0

19 Package information TSLP-7-5 Package information TSLP-7- Figure 8 Package outline Figure 9 Foot print Datasheet 9 v3.0

20 Package information TSLP-7- Figure 0 Marking layout example 4 PIN INDEX MARKING ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 28 & PROJECTION METHOD [ ] Figure Tape information Note: See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages. The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. Datasheet 20 v3.0

21 Revision history Revision history Document version Date of release Description of changes 3.0 New datasheet layout. Datasheet 2 v3.0

22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 208 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-zev IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury