Qualified for industrial apllications according to the relevant tests of JEDEC47/20/22. Pin 1
|
|
- Christina Whitehead
- 6 years ago
- Views:
Transcription
1 TVS (Transient Voltage Suppressor) Bi-directional, 5.5 V,.23 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±2 kv (air / contact discharge) - IEC6-4-4 (EFT): ±2.5 kv / ±6 A (5/5 ns) - IEC6-4-5 (Surge): ±3.5 A (8/2 μs) Bi-directional working voltage up to: V RWM = ±5.5 V Line capacitance: C L =.23 pf (typical) at f = MHz Clamping voltage: V CL = 3 V (typical) at I TLP = 6 A with R DYN =.66 Ω (typical) Very low reverse current: I R < na (max.) Small form factor SMD size 2 and low profile (.58 mm x.28 mm x.5 mm) Bidirectional and symmetric I/V characteristics for optimized design and assembly Pb-free (RoHS compliant) and halogen free package Guidelines for optimized PCB design and assembly process are available in [2]. Product validation Qualified for industrial apllications according to the relevant tests of JEDEC47/2/22 Application examples USB 3., Firewire, DVI, HDMI, S-ATA, DisplayPort, Thunderbolt Mobile HDMI Link, MDDI, MIPI, SWP / NFC Device information Pin Pin Pin 2 = Pin 2 a) Pin configuration b) Schematic diagram Figure Table Pin configuration and schematic diagram Part information Type Package Configuration Marking code ESD3-B-W2 WLL-2-3 line, bi-directional T ) The device does not have any marking on the device top. The marking code is between the pads. Datasheet Please read the Important Notice and Warnings at the end of this document Revision.
2 Table of contents Table of contents Features Product validation Application examples Device information Table of contents Maximum ratings Electrical characteristics Typical characteristic diagrams Package information WLL-2-3 Package References Revision history Trademarks Datasheet 2 Revision.
3 Maximum ratings Maximum ratings Note: T A = 25 C, unless otherwise specified ) Table 2 Maximum ratings Parameter Symbol Values Unit Reverse working voltage V RWM ±5.5 V ESD discharge 2) V ESD (contact) ±2 kv V ESD (air) ±2 Peak pulse power 3) P PK 26 W Peak pulse current 3) I PP ±3.5 A Operating temperature range T OP -55 to 25 C Storage temperature T stg -65 to 5 C Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. Device is electrically symmetrical 2 V ESD according to IEC6-4-2 (R = 33 Ω, C = 5 pf discharge network) 3 Stress pulse: 8/2μs current waveform according to IEC6-4-5 Datasheet 3 Revision.
4 Electrical characteristics 2 Electrical characteristics I PP ITLP IF VF IF VR IR Forward voltage Forward current Reverse voltage Reverse current DV DI RDYN = DV DI Ih VTLP Vt VRWM VCL Vh IT IR VR RDYN = DV DI DI DV IR Vh IT Ih -IPP -ITLP IR VCL VTLP RDYN V RWM Vt Vh VCL VTLP IR IPP ITLP Ih IT VRWM Vt VF Dynamic resistance Reverse working voltage max. Trigger voltage Holding voltage Clamping voltage TLP voltage Reverse leakage current Peak pulse current TLP current Holding current Test current Thyristor_ Characteristic_ Curve_Bi-Directional.vsd Figure 2 Definitions of electrical characteristics Datasheet 4 Revision.
5 Electrical characteristics Table 3 DC characteristics (T A = 25 C, unless otherwise specified) ) Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Breakdown voltage V br V I R = ma Holding voltage V h.9 V I R = I h Holding reverse current I h 25 ma V R = V h Reverse current I R na V R = 5.5 V Table 4 AC characteristics (T A = 25 C, unless otherwise specified) Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Line capacitance C L pf V R = V, f = MHz.2 V R = V, f = 2.5 GHz Table 5 ESD and Surge characteristics (T A = 25 C, unless otherwise specified) ) Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Clamping voltage 2) V CL 8.5 V I TLP = 8 A, t p = ns 3 I TLP = 6 A, t p = ns Clamping voltage 3) 3 I PP = A, t p = 8/2 µs 5.5 I PP = 3 A, t p = 8/2 µs Dynamic resistance 2) R DYN.66 Ω t p = ns Device is electrically symmetrical 2 Please refer to Application Note AN2 []. TLP parameters: Z = 5 Ω, t p = ns, t r =.6 ns. 3 Stress pulse: 8/2μs current waveform according to IEC6-4-5 Datasheet 5 Revision.
6 Typical characteristic diagrams 3 Typical characteristic diagrams Note: T A = 25 C, unless otherwise specified I R [A] V R [V] Figure 3 Reverse leakage current: I R = f(v R ) C L [pf] V R [V] Figure 4 Line capacitance: C L = f(v R ), f = MHz Datasheet 6 Revision.
7 Typical characteristic diagrams V CL [V] 2 Scope: 6 GHz, 2 GS/s V CL-max-peak = 8 V 5 4 V CL-3ns-peak = 4 V t p [ns] Figure 5 Clamping voltage (ESD): V CL = f(t), 8 kv positive pulse according to IEC6-4-2 V CL [V] 2 Scope: 6 GHz, 2 GS/s V CL-max-peak = -8 V -8-9 V CL-3ns-peak = -4 V t p [ns] Figure 6 Clamping voltage (ESD): V CL = f(t), 8 kv negative pulse according to IEC6-4-2 Datasheet 7 Revision.
8 Typical characteristic diagrams 6 4 Scope: 6 GHz, 2 GS/s V CL [V] V CL-max-peak = 47 V V CL-3ns-peak = 2 V t p [ns] Figure 7 Clamping voltage (ESD): V CL = f(t), 5 kv positive pulse according to IEC Scope: 6 GHz, 2 GS/s V CL [V] V CL-max-peak = -48 V V CL-3ns-peak = -22 V t p [ns] Figure 8 Clamping voltage (ESD): V CL = f(t), 5 kv negative pulse according to IEC6-4-2 Datasheet 8 Revision.
9 Typical characteristic diagrams 4 ESD3-B-W2 R DYN R DYN =.66 Ω 2 5 I TLP [A] Equivalent V IEC [kv] R DYN =.66 Ω V TLP [V] Figure 9 Clamping voltage (TLP): I TLP = f(v TLP ) [] Datasheet 9 Revision.
10 Typical characteristic diagrams I PP [A] V CL [V] Figure Clamping voltage (Surge): I PP = f(v CL ) according to IEC6-4-5 [] Datasheet Revision.
11 Typical characteristic diagrams Insertion Loss ( S 2 ) [db] ESD3-B-W2 5.. Frequency [GHz] Figure Insertion loss vs. frequency in a 5 Ω system Datasheet Revision.
12 Package information 4 Package information 4. WLL-2-3 Package Top view Bottom view.5±..28± (.9).58 ±.3.24 ±.2.7±.2 SG-WLL-2-3-PO V Figure 2 WLL-2-3 package outline (dimension in mm) Soldering Type: Reflow Soldering Stencil thickness < 8 µm Stencil thickness 8 µm Copper Solder mask Stencil apertures SG-WLL-2-3-FP V Figure 3 WLL-2-3 footprint (dimension in mm), recommendation for Printed Circuit Board Assembly see [2] Deliveries can be in Embossed Tape with or without vacuum hole (no selection possible). Specification allows identical processing (pick & place) by users. SG-WLL-2-3-TP V Figure 4 WLL-2-3 packing (dimension in mm) Marking on pad-side Type code Type code 2 2 Figure 5 WLL-2-3 marking example (see Table ) Datasheet 2 Revision.
13 References 5 References [] Infineon AG - Application Note AN2: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendation for Printed Circuit Board Assembly of Infineon WLL Packages [3] Infineon AG - Application Note AN392: TVS Diodes in ChipScalePackage reduce size and save cost Revision history Revision history: Rev..9, Page or Item Revision., Tables 2, 3, 4 Subjects (major changes since previous revision) Values updated Missing figures added Datasheet 3 Revision.
14 Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AU-ConvertIR, AURIX, C66, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC. Trademarks Update Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 27 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? erratum@infineon.com Document reference IFX-jaj IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V,.3 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61-4-2 (ESD): ±18 kv (air/contact
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V,.2 pf, 5, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC6-4-2 (ESD): ±25 kv
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge)
More informationTVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant
TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC),.3 pf, 21, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC61-4-2
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V, 3.5 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of susceptible I/O lines to: - IEC61-4-2 (ESD): ±3 kv (air/contact
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (Transient Voltage Suppressor) Bi-directional, 3.3 V, 6. pf, 2, RoHS and Halogen Free compliant Feature list ESD/transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air/contact discharge) -
More informationPVI5080NPbF, PVI5080NSPbF
PVI5080NPbF, PVI5080NSPbF Photovoltaic Isolator Single Channel 5-10 Volt Output General Description The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a
More informationTVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant
TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61000-4-2 (ESD):
More informationBSP752R. Features. Applications. Smart High-Side Power Switch
Features Overload protection Current limitation Short circuit protection Thermal shutdown with restart Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term
More informationOrderable Part Number IRL100HS121 PQFN 2mm x 2mm Tape and Reel 4000 IRL100HS121. Typical R DS(on) (m )
Target Applications Wireless charging Adapter Telecom Benefits Higher power density designs Higher switching frequency IR MOSFET - Uses OptiMOS TM 5 Chip Reduced parts count wherever 5V supplies are available
More informationThe new OptiMOS V
AN_201610_PL11_001 The new OptiMOS 5 150 V About this document Scope and purpose The new OptiMOS TM 5 150 V shows several improvements. As a result of deep investigations before starting the development
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET D V DSS 250V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET D V DSS 25V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power
More informationI D = 34A 70 T J = 125 C V GS, Gate -to -Source Voltage (V)
R DS(on), Drain-to -Source On Resistance (m ) R DS (on), Drain-to -Source On Resistance (m ) IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) Quality Requirement Category: Consumer
More informationIRDC3883 P3V3 user guide
UG_2062_PL7_02 IRDC3883 P3V3 user guide About this document Scope and purpose The IR3883 is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 3mm X 3
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET D V DSS 300V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed
More informationSMPS MOSFET IRF6218SPbF
SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters V DSS R DS(on) (max) I D - 150V 150m @ V GS = -V -27A Benefits Low Gate to Drain Charge to Reduce Switching
More informationIRF9530NSPbF IRF9530NLPbF
IRF9530NSPbF IRF9530NLPbF Benefits Advanced Process Technology Surface Mount (IRF9530NS) Low-profile through-hole(irf9530nl) 175 C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free
More informationPDP SWITCH. V DS min 250 V. V DS(Avalanche) typ. 300 V R DS(on) 10V 29 m T J max 175 C. IRFB4332PbF TO-220 Tube 50 IRFB4332PbF
PDP SWITCH Feature Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy
More informationPower Management & Multimarket
Protection Device TVS (Transient Voltage Suppressor) Bi-directional, 5.5 V, 6.5 pf, 5, RoHS and Halogen Free compliant Data Sheet Revision.4, 26-4-7 Final Power Management & Multimarket Edition 26-4-7
More informationEvaluation Board for DC Motor Control with the IFX9201. This board user manual provides a basic introduction to the hardware of the H-Bridge Kit 2Go.
- Board User Manual H-Bridge Kit 2Go About this document Scope and purpose This board user manual provides a basic introduction to the hardware of the H-Bridge Kit 2Go. The H-Bridge Kit 2Go is a complete
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD3V3XU1BL Bi-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD3V3XU1BL Data Sheet Revision 1.3, 213-9-11 Final Power Management & Multimarket
More informationPower Management & Multimarket
TVS Diode TVS (Transient Voltage Suppressor) ESD23-B1-W21 Bi-directional, 5.5 V, 7 pf, 21, RoHS and Halogen Free compliant Quality Requirement Category: Standard ESD23-B1-W21 Data Sheet Revision 1., 216-4-22
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD102-U1-02ELS Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD102-U1-02ELS Data Sheet Revision 1.0, 2013-02-04 Final Power Management
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD102-U2-099EL 2-Line Ultra-low Capacitance ESD / Transient Protection Diodes ESD102-U2-099EL Data Sheet Revision 1.1, 2013-05-15 Final Power Management
More informationPower Management & Multimarket
Protection Device TVS (Transient Voltage Suppressor) ESD307-U1-02N Uni-directional, 10 V, 270 pf, 0603, RoHS and Halogen Free compliant ESD307-U1-02N Data Sheet Revision 1.0, 2014-05-30 Final Power Management
More informationHigh voltage CoolMOS CE in SOT-223 package
AN_201603_PL52_016 High voltage CoolMOS CE in SOT-223 package About this document Scope and purpose Nowadays, the package costs of high voltage, high ohmic MOSFETs (metal oxide semiconductor field effect
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD108-B1-CSP0201 Ultra Low Capacitance TVS Diode in a Thin 0201 Chip Scale Package ESD108-B1-CSP0201 Data Sheet Revision 1.3, 2015-01-19 Final Power Management
More informationIRLI3705NPbF. HEXFET Power MOSFET V DSS 55V. R DS(on) 0.01 I D 52A
Logic Level Gate Drive dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully valanche Rated Lead-Free HEXFET Power MOSFET V DSS R DS(on)
More informationIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF Applications High frequency DC-DC converters Plasma Display Panel Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationESD (Electrostatic discharge) sensitive device, observe handling precautions
Product description The BFQ79 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ79
More information24 V ADR Switch Demonstrator
About this document Scope and purpose This provides a short introduction into the and its application. Intended audience Electrical engineers who are qualified and familiar with the challenges of handling
More informationQuasi-resonant control with XMC1000
AN_201606_PL30_020 Quasi-resonant control with XMC1000 About this document Scope and purpose This document introduces quasi-resonant control as a technique which enables traditional switched-mode power
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD203-B1-02 Series Bi-directional ESD / Transient / Surge Protection Diodes ESD203-B1-02ELS ESD203-B1-02EL Data Sheet Revision 1.3, 2013-12-19 Final Power
More informationTLE7268SK, TLE7268LC Application Note
TLE7268SK, TLE7268LC Application Note Dual LIN Transceiver About this document Scope and purpose This document provides application information for the transceiver TLE7268 from Infineon Technologies AG
More informationTLS810B1xxV33. 1 Overview. Ultra Low Quiescent Current Linear Voltage Regulator. Quality Requirement Category: Automotive
1 Overview Quality Requirement Category: Automotive Features Ultra Low Quiescent Current of 5.5 µa Wide Input Voltage Range of 2.75 V to 42 V Output Current Capacity up to 100 ma Off Mode Current Less
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD101-B1-02 Series Bi-directional Ultra Low Capacitance TVS Diode ESD101-B1-02ELS ESD101-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage
More informationPower Management & Multimarket
Protection Device TVS (Transient Voltage Suppressor) ESD217-B1-02EL Bi-directional, +14 / -8 V, 9 pf, 0402, RoHS and Halogen Free compliant ESD217-B1-02EL Data Sheet Revision 1.1, 2014-11-11 Final Power
More informationTVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode
TVS Diodes Transient Voltage Suppressor Diodes ESD5V0L1B-02V Bi-directional Low Capacitance TVS Diode ESD5V0L1B-02V Data Sheet Revision 1.0, 2010-12-16 Final Industrial and Multi-Market Edition 2010-12-16
More informationPower Management & Multimarket
DP10T Diversity Cross Switch for Carrier Aggregation Data Sheet Revision 3.1-2016-11-03 Power Management & Multimarket Edition 2016-11-03 Published by Infineon Technologies AG 81726 Munich, Germany c 2016
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD200B1CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package ESD200B1CSP0201 Data Sheet Revision 1.0, 20130521 Final Power Management &
More informationHow to drive a unipolar stepper motor with the TLE8110ED
How to drive a unipolar stepper motor with the TLE8110ED Product Family: Flex Multichannel Low Side Switches About this document Scope and purpose This Application Note demonstrates the behavior of the
More informationSilicon Germanium Low Noise Amplifier BGA7L1BN6
AN491 Silicon Germanium Low Noise Amplifier BGA7L1BN6 About this document Scope and purpose This application note describes Infineon s MMIC: BGA7L1BN6 as Low Noise Amplifier for LTE Band 28 (758 MHz )
More informationBGA123L4 as Low Current Low Noise Amplifier for GNSS Applications in L5/E5 bands
AN552 BGA123L4 as Low Current Low Noise Amplifier for GNSS Applications About this document Scope and purpose This application note describes Infineon s GNSS MMIC: BGA123L4 a low-current low noise amplifier
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD5V3L1B Series Bi-directional Low Capacitance ESD / Transient Protection Diode ESD5V3L1B-02LRH ESD5V3L1B-02LS Data Sheet Revision 1.1, 2012-10-15 Final Power
More informationTLE4959C Transmission Speed Sensor
Features Hall based differential speed sensor High magnetic sensitivity Large operating airgap Dynamic self-calibration principle Adaptive hysteresis Direction of rotation detection High vibration suppression
More informationHigh voltage gate driver IC. 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ. EiceDRIVER Compact
High voltage gate driver IC 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ EiceDRIVER Compact Final datasheet , 18.08.2016 Final Industrial Power
More informationHigh voltage CoolMOS P7 superjunction MOSFET in SOT-223 package
AN_201705_PL52_021 High voltage CoolMOS P7 superjunction MOSFET in SOT-223 package Authors: Jared Huntington Rene Mente Stefan Preimel About this document Scope and purpose Nowadays, the package cost of
More informationPower electronics engineers who want to design gate driving circuits with focus on Enable and Fault functions.
Application Note AN2015-07 EiceDRIVER Advanced use of pin EN- About this document Scope and purpose This application note targets to explain the function of the EN- pin of the half bridge driver IC in
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD112-B1-02 Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD112-B1-02ELS ESD112-B1-02EL Data Sheet Rev. 1.3, 2013-11-27 Final
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management
More informationSPDT high linearity, high power RF Switch BGS12PN10
AN497 SPDT high linearity, high power RF Switch About this document Scope and purpose This application note describes Infineon s SPDT high linearity, high power RF Switch: as switch for Mobile phones in
More informationTLF4277-2LD. 1 Overview
1 Overview Features Integrated Current Monitor Overvoltage, Overtemperature and Overcurrent Detection Adjustable Output Voltage Output Current up to 300 ma Adjustable Output Current Limitation Stable with
More informationTVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes
TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-08-01 Final
More informationESD0P2RF-02LRH ESD0P2RF-02LS
Bidirectional Ultra Low Capacitance TVS Diode ESD / transient protection of RF signal lines according to: IEC6004 (ESD): ±0kV (contact) IEC60044 (EFT): 40 A (5 / 50 ns) IEC60045 (Surge): 3 A (8 / 0 µs)
More informationSP4T Diversity Antenna Switch with GPIO Interface BGS14GA14
AN479 SP4T Diversity Antenna Switch with GPIO Interface About this document Scope and purpose This application note describes Infineon s SP4T Diversity Antenna Switch with GPIO Interface: as switch for
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes BGF120A Dual Channel UltraLow Capacitance ESD Diode Datasheet Rev. 1.4, 20120917 Final Power Management & Multimarket Edition 20120917 Published by Infineon
More informationSP5T Diversity Antenna Switch with GPIO Interface BGS15GA14
AN480 SP5T Diversity Antenna Switch with GPIO Interface About this document Scope and purpose This application note describes Infineon s SP5T Diversity Antenna Switch with GPIO Interface: as switch for
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.3, 2014-06-12 Final Power Management
More information1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode
Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1.1 Features ESD / transient protection of RF signal lines
More information16 W single end cap T8 lighting demo board
AN_060_PL5_003 6 W single end cap T8 lighting demo board About this document Scope and purpose This document is for a 6 W/70 ma single stage single end cap T8 LED lamp reference using average current control
More informationTVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes
TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication (NFC) ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.0, 2012-02-09 Final
More informationAdvanced Gate Drive Options for Silicon- Carbide (SiC) MOSFETs using EiceDRIVER
AN2017-04 Advanced Gate Drive Options for Silicon- Carbide (SiC) About this document Scope and purpose This application note discusses the basic parameters of silicon-carbide (SiC) MOSFETs and derives
More informationThe ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram
1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency f T of
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
More informationRobust low noise broadband pre-matched RF bipolar transistor
Product description The is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: dbm maximum RF
More informationPower Management & Multimarket
TVS Diode Transient Voltage Suppressor Diodes ESD3B12LRH Low Clamping & Low Capacitance ESD/Surge Protection Diode ESD3B12LRH Data Sheet Revision 1.2, 2131126 Final Power Management & Multimarket Revision
More informationThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance
More information6V8 * ESDA6V8UD ESDA6V8UD. Descriptions. Features. Order information. Applications. http//:
4-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) array designed to
More informationIRFR6215PbF IRFU6215PbF
IRFR625PbF IRFU625PbF P-Channel 75 C Operating Temperature Surface Mount (IRFR625) Straight Lead (IRFU625) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP7 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min =.8 db at. GHz, 3 V, 6 ma High gain G ms = 9. db at. GHz, 3 V, ma OIP 3 =.
More informationSmall Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
BGA123L4 Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Features Operating frequencies: 1550-1615 MHz Ultra low current consumption: 1.1 ma Wide supply
More information5V 4 * 1 5 ESD5344D ESD5344D. Descriptions. Features. Order information. Applications. http//:www.sh-willsemi.com
ESD5344D 4-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5344D is an ultra-low capacitance TVS (Transient Voltage Suppressor)
More informationWideband SP3T RF Switch for RF diversity or RF band selection applications BGS13S2N9
AN470 Wideband SP3T RF Switch for RF diversity or RF band BGS13S2N9 About this document Scope and purpose This application note describes Infineon s Wideband SP3T RF Switch for RF diversity or RF band
More informationBGA5L1BN6 BGA5L1BN6. 18dB High Gain Low Noise Amplifier for LTE Lowband VCC GND. Features
BGA5L1BN6 Features Operating frequencies: 600-1000 MHz Insertion power gain: 18.5 db Insertion Loss in bypass mode: 2.7 db Low noise figure: 0.7 db Low current consumption: 8.2 ma Multi-state control:
More informationFor broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications
Features Maximum collector-emitter voltage V CE0 = 15 V Maximum collector current I C = 25 ma Noise figure NF = 3.5 db 3rd order output intercept point OIP 3 = 21.5 dbm 1 db output compression point P
More informationESD5V0SxUS. ESD5V0S5US E rotated in reel. Type Package Configuration Marking SOT363 SOT363 SOT363 ESD5V0S4US ESD5V0S5US
ESDV0SxUS MultiChannel TVS Diode Array ESD / transient protection of data and power lines in. V / V application according to: IEC00 (ESD): ± 0 KV (contact) IEC00 (EFT): 80 A (/0 ns) IEC00 (Surge): A (8/0
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP8ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for. -. GHz LNA applications. Feature list Unique combination
More informationPower Management & Multimarket
TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B-2LRH ESD / Transient Protection Diode for Near Field Communication (NFC) ESD18VU1B-2LRH Data Sheet Revision 1.4, 213-8-7 Final Power Management
More informationBGA855N6 BGA855N6. Low Noise Amplifier for Lower L-Band GNSS Applications GND. Features
Features Operating frequencies: 1164-1300 MHz Insertion power gain: 17.8dB Low noise figure: 0.60 db High linearity performance IIP3: 0 dbm Low current consumption: 4.8 ma Ultra small TSNP-6-10 leadless
More informationESD5311X ESD5311X 1-Line, Bi-directional, Ultra-low Capacitance http//: Transient Voltage Suppressors Descriptions
1-Line, Bi-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high
More information3 * ESD5302N ESD5302N. Descriptions. Features. Applications. Order information. http//:
2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) array designed to
More informationHigh voltage gate driver IC. 600 V half bridge gate drive IC 2EDL23I06PJ 2EDL23N06PJ. EiceDRIVER Compact. <Revision 2.4>,
High voltage gate driver IC 600 V half bridge gate drive IC 2EDL23I06PJ 2EDL23N06PJ EiceDRIVER Compact Final datasheet , 28.11.2017 Final Industrial Power Control Edition 28.11.2017 Published
More informationSuperjunction MOSFET for charger applications
AN_201411_PL11_008 Superjunction MOSFET for charger applications About this document Scope and purpose This application note will describe the fundamental differences between a Superjunction MOSFET and
More informationESD9N12BA ESD9N12BA. Descriptions. Features. Applications. Order information. http//:
1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ES9N12BA is a TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components which
More informationBGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,
Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1, 2017-03-03 RF & Protection Devices Edition 2017-03-03 Published by Infineon Technologies AG 81726 Munich, Germany 2017 Infineon Technologies
More informationBGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.
Broadband Low Noise Amplifier for Portable and Mobile TV Applications Data Sheet Revision 3.0, 2015-11-18 RF & Protection Devices Edition 2015-11-18 Published by Infineon Technologies AG 81726 Munich,
More informationTLE4959C FX Flexible Transmission Speed Sensor
TLE4959C FX Flexible Transmission Speed Sensor Features Hall based differential speed sensor High magnetic sensitivity Large operating airgap Dynamic self-calibration principle Adaptive hysteresis Output
More informationEAYW ESD5425E ESD5425E. Descriptions. Features. Order information. Applications. http//:
4-Lines, Uni-directional, Low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high
More informationTLF Errata Sheet. Automotive Power. Multi Voltage Safety Micro Processor Supply TLF35584QVVS1 TLF35584QVVS2 TLF35584QKVS1 TLF35584QKVS2
Multi Voltage Safety Micro Processor Supply TLF35584QVVS1 TLF35584QVVS2 TLF35584QKVS1 TLF35584QKVS2 Errata Sheet Rev. 3.0, 2017-03-17 Automotive Power Table of Contents 1 Overview.......................................................................
More informationTLE8250G. 1 Overview. High Speed CAN-Transceiver. Quality Requirement Category: Automotive
1 Overview Quality Requirement Category: Automotive Features Fully compatible to ISO 11898-2 Wide common mode range for electromagnetic immunity (EMI) Very low electromagnetic emission (EME) Excellent
More informationAUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationDeveloped for automotive applications. Product qualification according to AEC-Q100.
Features Available as single die and dual die with separate supplies for each die Low current consumption and quick start up 360 contactless angle measurement Output amplitude optimized for circuits with
More informationLow Side Switch Shield
User Manual Low Side Switch Shield About this document Scope and purpose This document describes how to use the Low Side Switch Shield. Intended audience Engineers, hobbyists and students who want to add
More informationInternally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications
Product description The BGB74L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon s silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure
More informationPower Management & Multimarket
LED Driver BCR402W Datasheet Revision 2.0, 2012-04-12 Power Management & Multimarket Edition 2012-04-12 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights
More information