LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
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1 AIKQ12N6CT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C AutomotiveAECQ11qualified DesignedforDC/ACconvertersforAutomotiveApplication VerylowVCE(sat)1.5V(typ.) Maximumjunctiontemperature175 C Dynamicallystresstested Shortcircuitwithstandtime5µs 1%shortcircuittested 1%ofthepartsaredynamicallytested PositivetemperaturecoefficientinVCE(sat) LowEMI LowgatechargeQG Greenpackage Verysoft,fastrecoveryantiparallelEmitterControlledHE diode TRENCHSTOP TM andfieldstoptechnologyfor6v applicationsoffers: verytightparameterdistribution highruggedness,temperaturestablebehavior veryhighswitchingspeed G E Applications: Maininverter Climatecompressor PTCheater Motordrives KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKQ12N6CT 6V 12A 1.5V 175 C AK12DCT PGTO Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V
2 AIKQ12N6CT TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 2 V
3 AIKQ12N6CT MaximumRatings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC=135 C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 48. A Turn off safe operating area VCE 6V,Tvj 175 C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC=124 C 48. A IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 48. A Gateemitter voltage VGE ±2 V Short circuit withstand time VGE=15.V,VCC 4V Allowed number of short circuits < 1 Time between short circuits: 1.s Tvj=15 C PowerdissipationTC=25 C Ptot 833. W Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, 1) wave soldering 1.6mm (.63in.) from case for 1s 26 tsc 5 A A µs C ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, 2) junction case Diode thermal resistance, 2) junction case Thermal resistance junction ambient Rth(jc).18 K/W Rth(jc).3 K/W Rth(ja) 4 K/W 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(cs) (case to heat sink) of more than.1k/w not included. Datasheet 3 V
4 AIKQ12N6CT ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=15.V,IC=12.A Tvj=25 C Tvj=175 C VGE=V,IF=12.A Tvj=25 C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=1.9mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj=175 C Gateemitter leakage current IGES VCE=V,VGE=2V 1 na Transconductance gfs VCE=2V,IC=12.A 75. S Integrated gate resistor rg none Ω V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 753 Output capacitance Coes VCE=25V,VGE=V,f=1MHz 446 Reverse transfer capacitance Cres 26 Gate charge Short circuit collector current Max. 1 short circuits Time between short circuits: 1.s QG IC(SC) VCC=48V,IC=12.A, VGE=15V VGE=15.V,VCC 4V, tsc 5µs Tvj=15 C pf 772. nc 846 A SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 33 ns Rise time VCC=4V,IC=12.A, tr 43 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=3.Ω,RG(off)=3.Ω, 31 ns Fall time Lσ=63nH,Cσ=31pF tf 33 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 4.1 mj Turnoff energy Eoff diode reverse recovery. 2.8 mj Total switching energy Ets 6.9 mj Datasheet 4 V
5 AIKQ12N6CT DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 28 ns Diode reverse recovery charge VR=4V, Qrr 3.5 µc IF=12.A, Diode peak reverse recovery current Irrm dif/dt=11a/µs 25. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=175 C Turnon delay time td(on) Tvj=175 C, 33 ns Rise time VCC=4V,IC=12.A, tr 51 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=3.Ω,RG(off)=3.Ω, 355 ns Fall time Lσ=63nH,Cσ=31pF tf 43 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 6.7 mj Turnoff energy Eoff diode reverse recovery. 4.1 mj Total switching energy Ets 1.8 mj DiodeCharacteristic,atTvj=175 C Diode reverse recovery time trr Tvj=175 C, 41 ns Diode reverse recovery charge VR=4V, Qrr 1.8 µc IF=12.A, Diode peak reverse recovery current Irrm dif/dt=1a/µs 45. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 52 A/µs Datasheet 5 V
6 AIKQ12N6CT Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj 175 C) TC,CASETEMPERATURE[ C] Figure 2. Collectorcurrentasafunctionofcase temperature (VGE 15V,Tj 175 C) 36 VGE=2V 36 VGE=2V 32 15V 32 15V IC,COLLECTORCURRENT[A] V 11V 9V 8V 7V 6V IC,COLLECTORCURRENT[A] V 11V 9V 8V 7V 6V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=175 C) Datasheet 6 V
7 AIKQ12N6CT IC,COLLECTORCURRENT[A] Tj=25 C Tj=175 C VCE(sat),COLLECTOREMITTERSATURATION[A] IC=38A IC=75A IC=12A IC=15A VGE,GATEEMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=2V) Tj,JUNCTIONTEMPERATURE[ C] Figure 6. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1 1E+4 td(off) tf td(on) tr td(off) tf t,switchingtimes[ns] 1 td(on) tr t,switchingtimes[ns] IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tj=175 C,VCE=4V, VGE=15/V,rG=3Ω,Dynamictestcircuitin rg,gateresistor[ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,tj=175 C,VCE=4V, VGE=15/V,IC=12A,Dynamictestcircuitin Datasheet Figure E) 7 Figure E) V
8 AIKQ12N6CT t,switchingtimes[ns] 1 1 td(off) tf td(on) tr VGE(th),GATEEMITTERTHRESHOLDVOLTAGE[V] typ. min. max Tj,JUNCTIONTEMPERATURE[ C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,vce=4v,vge=15/v, IC=12A,rG=3Ω,DynamictestcircuitinFigure E) Tj,JUNCTIONTEMPERATURE[ C] Figure 1. Gateemitterthresholdvoltageasafunction ofjunctiontemperature (IC=1,9mA) 4 Eoff Eoff 25 Eon Ets 35 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,tj=175 C,VCE=4V, VGE=15/V,rG=3Ω,Dynamictestcircuitin rg,gateresistor[ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,tj=175 C,VCE=4V, VGE=15/V,IC=12A,Dynamictestcircuitin Datasheet Figure E) 8 Figure E) V
9 AIKQ12N6CT Eoff Eoff 14 Eon Ets 14 Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Tj,JUNCTIONTEMPERATURE[ C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,vce=4v,vge=15/v, IC=12A,rG=3Ω,Dynamictestcircuitin Figure E) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,tj=175 C,VGE=15/V, IC=12A,RG=3Ω,Dynamictestcircuitin Figure E) V 48V 1E+4 Cies Coes Cres VGE,GATEEMITTERVOLTAGE[V] C,CAPACITANCE[pF] QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=12A) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collectoremittervoltage (VGE=V,f=1MHz) Datasheet 9 V
10 AIKQ12N6CT TRENCHSTOPTM Series tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] VGE, GATEEMITTER VOLTAGE [V].1 D= single pulse 1E5 1E D= single pulse.1 i: ri[k/w]: E3 τi[s]: 2.1E4 2.6E E6 tp, PULSE WIDTH [s] Figure 19. IGBT transient thermal impedance as a function of pulse width for different duty cycles D (D=tp/T) Datasheet 13.1 i: ri[k/w]: E3 τi[s]: 2.1E4 1.6E E6 12 Figure 18. Short circuit withstand time as a function of gateemitter voltage (VCE=4V, start at Tj=25 C, Tjmax 15 C) ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] Figure 17. Typical short circuit collector current as a function of gateemitter voltage (VCE 4V, start at Tj 15 C).1 11 VGE, GATEEMITTER VOLTAGE [V] 1E5 1E tp, PULSE WIDTH [s] Figure 2. Diode transient thermal impedance as a function of pulse width for different duty cycles D (D=tp/T) 1 V
11 AIKQ12N6CT TRENCHSTOPTM Series 8 12 Tj=25 C, IF = 12A Tj=175 C, IF = 12A 1 Qrr, REVERSE RECOVERY CHARGE [µc] trr, REVERSE RECOVERY TIME [ns] Tj=25 C, IF = 12A Tj=175 C, IF = 12A dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 21. Typical reverse recovery time as a function of diode current slope (VR=4V,Dynamic test circuit in Figure E) Tj=25 C, IF = 12A Tj=175 C, IF = 12A 6 2 dirr/dt, diode peak rate of fall of Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] 11 Tj=25 C, IF = 12A Tj=175 C, IF = 12A dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 23. Typical reverse recovery current as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) Datasheet 9 Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V, Dynamic test circuit in Figure E) 11 V
12 AIKQ12N6CT TRENCHSTOPTM Series Tj=25 C Tj=175 C IF=38A IF=75A IF=12A IF=15A VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] VF, FORWARD VOLTAGE [V] Figure 25. Typical diode forward current as a function of forward voltage Datasheet Tj, JUNCTION TEMPERATURE [ C] Figure 26. Typical diode forward voltage as a function of junction temperature 12 V
13 AIKQ12N6CT TRENCHSTOPTM Series Package Drawing PGTO DIM A A1 A2 b b1 b2 MIN MILLIMETERS MAX INCHES MIN MAX DOCUMENT NO. Z8B SCALE c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet (BSC) 5.44 (BSC) mm EUROPEAN PROJECTION ISSUE DATE REVISION 1 V
14 AIKQ12N6CT TRENCHSTOPTM Series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a 1% VGE b t Qa IC(t) Qb di 9% IC 9% IC 1% IC 1% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. 1% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V
15 AIKQ12N6CT TRENCHSTOPTM Series Revision History AIKQ12N6CT Revision: 21729, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Data sheet created Datasheet 15 V
16 Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AUConvertIR, AURIX, C166, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DIPOL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, myd, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 215 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG München, Germany Infineon Technologies AG 217. All Rights Reserved. Important Notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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