Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C

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Randolph Reeves
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Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI

1 Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI FRD chip o fast and soft reverse recovery o low voltage drop Design features copper baseplate Al2O3 DBC substrate ultrasonically welded power terminals Improved termal cycling RoHS compliant UL certified file-no. Е25544 Typical application AC motor drives solar inverter air conditioning high power converters and UPS 12 V 1 A Maximum rated values Definition Symbol Conditions Value Unit IGBT Collector-Emitter voltage VCES VGE =. 12 V Collector current (nominal) IC nom 1 A IC 25 Tvj (max) = 175 C; Tc = 25 C. 165 A Collector current (maximum continuous) IC 8 Tvj (max) = 175 C; Tc = 8 C. 1 A Repetitive peak collector current *1 ICRM ICRM = 3 x IC nom; tp = 1 ms. 3 A Short-circuit duration tpsc T vj = 25 C; V GE = ±15 V; V CE = 72 V; on = off = 1.1 Ω; max < 75 A. 1 T vj = 15 C; V GE = ±15 V; V CE = 72 V; on = off = 1.1 Ω; max < 62 A. 1 µs Gate-Emitter voltage VGES ±2 V Junction operating temperature Tvj (op) ºC Inverse diode \ Freewheeling diode Repetitive peak reverse voltage VRRM VGE = V. 12 V Forward current (nominal) IF nom 1 A Forward current (maximum continuous) IF 25 Tvj (max) = 175 C; Tc = 25 C. 13 A IF 8 Tvj (max) = 175 C; Tc = 8 C. 98 A Repetitive peak forward current *1 IFRM IFRM = 3 x IF nom; tp = 1 ms. 3 A Junction operating temperature Tvj (op) C Module Storage temperature Tstg C Isolation voltage Visol AC sin 5 Hz; t = 1 min. 4 V *1 Pulse width and repetition rate should be such that device junction temperature does not exceed maximum Tvj rating Datasheet MIFA-HB12FA-1N_v1.1 page 1

2 Characteristics MIFA-HB12FA-1N Definition Symbol Conditions Value min. typ. max. Unit IGBT Collector-Emitter saturation voltage VCEsat VGE = +15 V; IС = 1 А; Tvj = 25 C V tu = 1 µs. Tvj = 15 C V Gate-Emitter threshold voltage VGE(th) IC = 4 ma; VCE = VGE; Tvj = 25 C; tu = 2 ms V Collector-Emitter cut-off current ICES VCE = 12 V; Tvj = 25 C µа tu = 1 ms; VGE =. Tvj = 15 C mа Gate-Emitter leakage current IGES VCE = ; VGE = ±2 V; Tvj = 25 C; tu = 3 ms na Input capacitance Cies nf VCE = 1 V; VGE = V; Output capacitance Coes nf f = 1 MHz; Tvj = 25 C. Reverse transfer capacitance Cres nf Total gate charge QG IC = 1 А; VCE = 6 V; VGE = V nc Internal gate resistance RGint Tvj = 25 C Ω Turn-on delay time td(on) Tvj = 25 C Tvj = 15 C ns Tvj = 25 C Rise time tri VCE = 6 V; ns Tvj = 15 C Tvj = 25 C Turn-on energy Eon IC max = 1 А; mj Tvj = 15 C Tvj Turn-off delay time td(off) L = 3 µh. = 25 C ns Tvj = 15 C Fall time tfi Tvj = 25 C Tvj = 15 C ns Turn-off energy Eoff Tvj = 25 C Tvj = 15 C mj Collector-emitter threshold voltage VCE VGE = +15 V; Tvj = 15 C; V On-State slope resistance (IGBT) rce ICE1 = 25 А; ICE2 = 1 А; tu = 1 µs mω Thermal resistance junction to case Rth(j-c) DC; ICE = 1±1 A; Itest =.5 A; VGE = +15 V K/W Inverse diode \ Freewheeling diode Forward voltage drop VF IF = 1 А; Tvj = 25 C V VGE = ; tu = 1 µs. Tvj = 15 C V Tvj = 25 C ns Reverse recovery time trr Tvj = 15 C ns Tvj = 25 C A Peak reverse recovery current IrrM VСE = 6 V; Tvj = 15 C А IС max = 1 А; Tvj = 25 C µc Reverse recovered charge Qrr RG on = 1.1 Ω; Tvj = 15 C L = 3 µh µc Tvj = 25 C mj Reverse recovery energy Erec Tvj = 15 C mj Threshold voltage V(T) Tvj = 15 C; VGE = ; ICE1 = 25 А; V Forward slope resistance rt ICE2 = 1 А; tu = 1 µs mω Thermal resistance junction to case Rth(JC-D) DC; ICE = 8±1 A; Itest =.5 A; VGE = +15 V К/W Datasheet MIFA-HB12FA-1N_v1.1 page 2

3 MIFA-HB12FA-1N Module Pin resistance RPxy T vj = 25 C. Parasitic inductance between terminals LPxy T vj = 25 C; f = 1 MHz. RP RP LP LP Thermal resistance case to heatsink RthCH per module К/W Mounting torque for screws to heatsink Ms to heatsink M N*m Mounting torque for terminal screws Mt to terminals M N*m Weight W g mω nh Notes: Insulating material operating temperature 125 C max; Case temperature 125 C max; The recommended operating junction temperature Tvj op = C Datasheet MIFA-HB12FA-1N_v1.1 page 3

4 MIFA-HB12FA-1N Chart 1 typ. output characteristic, IGBT T 8 j = 25 C T j = 15 C ,5 2 2,5 3 V CE [V] VGE = +15 V Chart 2 max. rated current vs temperature T C [ C] DC; VGE = +15 V; Tvj (max) = 15 C. E [mj] Chart 3 typ. turn-on/-off energy vs rated current, IGBT E off E on VCE = 6 V; L = 3 µh; Tvj (max) = 15 C. E [mj] Chart 4 typ. turn-on/-off energy vs gate resistance, IGBT E off E on [Ω] VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C Datasheet MIFA-HB12FA-1N_v1.1 page 4

5 MIFA-HB12FA-1N Chart 5 typ. switching times vs rated current, IGBT. 7 Chart 6 typ. switching times vs gate resistance, IGBT t [ns] t d_off t d_on t [ns] t d_off t d_on VCE = 6 V; L = 3 µh; Tvj (max) = 15 C. Chart 7 max. transient thermal impedance [Ω] VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C. Chart 8 RBSOA. Z thjc [K/W] 1,1,1 Diode IGBT Single pulse; VGE = +15 V.,1, t [s] V CE [V] VСE max = 12 V; IC max = 2*IC nom; L = 3 µh Datasheet MIFA-HB12FA-1N_v1.1 page 5

6 MIFA-HB12FA-1N Chart 9 typ. output characteristic, FRD. Chart 1 typ. switching losses vs rated current, FRD T j = 25 C T j = 15 C E rec [мдж] ,5 2 2,5 3 V F [V] VGE = +15 V. VCE = 6 V; L = 3 µh; RG on = 1.1 Ω; Tvj (max) = 15 C. Chart 11 typ. switching losses vs gate resistance, FRD. Chart 12 typ. reverse recovered charge vs gate resistance, FRD E rec [мдж] 5 4 Q rr [мккл] [Ом] [Ом] VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C. VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C Datasheet MIFA-HB12FA-1N_v1.1 page 6

7 MIFA-HB12FA-1N t [ns] Chart 13 typ. switching times vs rated current, FRD t fi t ri VCE = 6 V; L = 3 µh. Tvj (max) = 15 C. Chart 15 typ. gate charge characteristic. t [ns] Chart 14 typ. switching times vs gate resistance, FRD t fi t ri VCE = 6 V; IC max = 1 А; L = 3 µh. Tvj (max) = 15 C. Chart 16 typ. reverse recovery current vs gate resistance FRD V GE [V] Q G [nc] I rr [Ом] IC = 1 А; VCE = 6 V; VGE = V. VCE = 6 V; L = 3 µh. Tvj (max) = 15 C Datasheet MIFA-HB12FA-1N_v1.1 page 7

8 MIFA-HB12FA-1N Chart 17 typ. rated current vs frequency f SW [khz] Duty cycle 5% Datasheet MIFA-HB12FA-1N_v1.1 page 8

9 MIFA-HB12FA-1N Overall dimensions: Package type FA Part numbering guide MIFA - HB 12 FA - 1 N MIFA IGBT module package type: FA HB 2 switches as Half-Bridge HC 1 switch as High-Side chopper LC 1 switch as Low-Side chopper 12 Voltage rating (VCES/1) FA IGBT+FRD chipset modification 1 Current Rating N Climatic version: normal climate The information contained herein is protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change datasheet without notice Datasheet MIFA-HB12FA-1N_v1.1 page 9

Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C

Industry standard 34mm IGBT module MIFA-HB12FA-N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of C o square RBSOA of 2xIC o low EMI FRD chip