IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications

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STRPOWER SEMICONDUCTOR TM IGBT GD10PJK120L1S Preliminary Molding Type Module 1200/10 PIM in one-package General Description STRPOWER IGBT Power Module provides ultra low conduction and switching loss

1 STRPOWER SEMICONDUCTOR TM IGBT GD10PJK120L1S Preliminary Molding Type Module 1200/10 PIM in one-package General Description STRPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness.they are designed for the applications such as general inverters and UPS. Features 10μs short circuit capability CE(sat) with positive temperature coefficient Square RBSO Low inductance case Fast & soft reverse recovery anti-parallel FWD Typical pplications Inverter for motor drive C and DC servo drive amplifier Uninterruptible power supply 2009 STRPOWER Semiconductor Ltd. 12/28/2009 1/9 Preliminary

2 IGBT-inverter T C =25 unless otherwise noted Maximum Rated alues CES Collector-Emitter 1200 GES Gate-Emitter oltage ±20 I C Collector T C =25 T C =80 10 I CM Pulsed Collector Current t p =1ms 20 P tot Total Power T j = W T SC Short Circuit Withstand T j = μs Off Characteristics B CES I CES I GES Collector-Emitter 1200 Breakdown oltage CE = CES, GE =0, Collector Cut-Off Current 5.0 m Gate-Emitter Leakage GE = GES, CE =0, 400 n Current On Characteristics GE(th) CE(sat) Gate-Emitter Threshold I C =125μ, CE = GE, oltage I C =10, GE =15, Collector to Emitter Saturation oltage I C =10, GE =15, 2.75 Switching Characteristics E on E off E tot E on E off E tot Turn-On Switching 0.96 mj Turn-Off Switching R G =22Ω, GE =±15, 0.46 mj Total Switching 1.42 mj Turn-On Switching 1.25 mj Turn-Off Switching R G =22Ω, GE =±15, 0.69 mj Total Switching 1.94 mj 2009 STRPOWER Semiconductor Ltd. 12/28/2009 2/9 Preliminary

3 t d(on) Turn-On Delay Time 86 ns t r Rise Time 21 ns R G =22Ω, GE =±15, t d(off) Turn-Off Delay Time 118 ns Fall Time 274 ns t f C ies Input Capacitance 750 pf C oes Output Capacitance CE =30,f=1Mhz, 190 pf C res Q G R Gint I SC Reverse Transfer GE =0 Capacitance 20 pf Gate Charge GE = nc Internal Gate Resistance / Ω T P 10μs, GE =15, SC Data, CC =900, TBD CEM 1200 DIODE-inverter T C =25 unless otherwise noted Maximum Rated alues RRM Collector-Emitter 1200 I F DC Forward T C =80 10 I FRM Repetitive Peak Forward Current t p =1ms 20 I 2 t I 2 t-value, R =0, t p =10ms, 20 2 s Characteristics alues F Q rr I RM E rec Diode Forward I F =10, GE =0 oltage 2.00 Recovered Charge 0.82 I F =10, 1.51 ns Peak Reverse R =600, 12 Recovery Current di/dt=-400/μs, 13 Reverse Recovery GE = Energy 0.55 mj 2009 STRPOWER Semiconductor Ltd. 12/28/2009 3/9 Preliminary

4 DIODE-rectifier T C =25 unless otherwise noted Maximum Rated alues RRM Collector-Emitter 1600 I F() verage On-state T C = I RMSM Maximum RMS Current at Rectifier Output T C =80 I FSM Surge Forward Current R =0,t p =10ms,T j = I 2 t I 2 t-value, R =0,t p =10ms,T j = s Characteristics alues F Diode Forward 1.11 I F =7 oltage T j = I R Reverse Current T j =150, R = m IGBT-brake-chopper T C =25 unless otherwise noted Maximum Rated alues CES Collector-Emitter 1200 GES Gate-Emitter oltage ±20 I C Collector T C =25 T C =80 10 I CM Pulsed Collector Current t p =1ms 20 P tot Total Power T j = W T SC Short Circuit Withstand T j = μs Off Characteristics B CES I CES I GES Collector-Emitter 1200 Breakdown oltage CE = CES, GE =0, Collector Cut-Off Current 5.0 m Gate-Emitter Leakage GE = GES, CE =0, 400 n Current 2009 STRPOWER Semiconductor Ltd. 12/28/2009 4/9 Preliminary

5 On Characteristics GE(th) CE(sat) Gate-Emitter Threshold I C =125μ, CE = GE, oltage I C =10, GE =15, Collector to Emitter Saturation oltage I C =10, GE =15, 2.75 Switching Characteristics E on E off E tot E on E off E tot Turn-On Switching 0.96 mj Turn-Off Switching R G =22Ω, GE =±15, 0.46 mj Total Switching 1.42 mj Turn-On Switching 1.25 mj Turn-Off Switching R G =22Ω, GE =±15, 0.69 mj Total Switching 1.94 mj t d(on) Turn-On Delay Time 86 ns t r Rise Time 21 ns R G =22Ω, GE =±15, t d(off) Turn-Off Delay Time 118 ns Fall Time 274 ns t f C ies Input Capacitance 750 pf C oes Output Capacitance CE =30,f=1Mhz, 190 pf C res Q G R Gint I SC Reverse Transfer GE =0 Capacitance 20 pf Gate Charge GE = nc Internal Gate Resistance / Ω T P 10μs, GE =15, SC Data, CC =900, TBD CEM STRPOWER Semiconductor Ltd. 12/28/2009 5/9 Preliminary

6 DIODE-brake-chopper T C =25 unless otherwise noted Maximum Rated alues RRM Collector-Emitter 1200 I F DC Forward T C =80 10 I FRM Repetitive Peak Forward Current t p =1ms 20 I 2 t I 2 t-value, R =0, t p =10ms, 20 2 s Characteristics alues F Q rr I RM E rec Diode Forward I F =10, GE =0 oltage 2.00 Recovered Charge 0.82 I F =10, 1.51 ns Peak Reverse R =600, 12 Recovery Current di/dt=-400/μs, 13 Reverse Recovery GE = Energy 0.55 mj Electrical Characteristics of NTC T C =25 unless otherwise noted R 25 Rated resistance 5.0 kω R/R Deviation of R 100 T C =100,R 100 =493.3Ω -5 5 % P 25 Power dissipation 20.0 mw B 25/50 R 2 =R 25 exp[b 25/50 (1/T 2-1/(298.1 B-value 3375 K 5K))] 2009 STRPOWER Semiconductor Ltd. 12/28/2009 6/9 Preliminary

7 Symbol Parameter Min. Typ. Max. Units ISO Isolation oltage RMS,f=50Hz,t=1min 2500 L CE Stray Inductance 40 nh R CC +EE R θjc Module Lead Resistance, Terminal to T C =25 10 mω Junction-to-Case (per IGBT-inverter) 1.07 Junction-to-Case (per DIODE-inverter) 1.75 Junction-to-Case (per DIODE-rectifier) 1.66 K/W Junction-to-Case (per IGBT-brake-chopper) 1.08 Junction-to-Case (per DIODE-brake-chopper) 1.66 R θcs Case-to-Sink (Conductive grease applied) 0.03 K/W T j Maximum Junction Temperature 150 T STG Storage Temperature Range F Mounting Force Per Clamp N G Weight of Module 36 g 2009 STRPOWER Semiconductor Ltd. 12/28/2009 7/9 Preliminary

8 Equivalent Circuit Schematic Package Dimension Dimensions in Millimeters 2009 STRPOWER Semiconductor Ltd. 12/28/2009 8/9 Preliminary

9 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. ny such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STRPOWER Semiconductor Ltd. 12/28/2009 9/9 Preliminary

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications STARPOWER SEMICONDUCTOR TM IGBT GD225HTL120C7S Preliminary Molding Type Module 1200V/225A 6 in one-package General Description STARPOWER IGBT power module provides ultra low conduction loss as well as