1200V 50A IGBT Module
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- Brice Darcy Heath
- 6 years ago
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1 12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included Applications AC motor control Motion/servo control Inverter and power supplies Characteristics ( max) Max. Junction Temperature 15 C op Operating Temperature C T stg Storage Temperature C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 25 M d Mounting Torque Recommended (M5) N m Weight 3 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 75 A =8 C 5 A I CM Repetitive Peak Collector Current t p =1ms 1 A P tot Dissipation Per 26 W V RRM Repetitive Reverse Voltage =25 C 12 V (AV) =25 C 75 A Average Forward Current =8 C 5 A RM Repetitive Peak Forward Current t p =1ms 1 A I 2 t =125 C, t=1ms, V R =V 68 A 2 s MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
2 12V 5A Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =2.mA V (sat) Collector - Emitter I C =5A, V GE =15V, =25 C 1.7 V Saturation Voltage I C =5A, V GE =15V, =125 C 1.9 V I ICES Collector Leakage Current =12V, V GE =V, =25 C 1 ma =12V, V GE =V, =125 C 1 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 4. Ω Q ge Gate Charge =6V, I C =5A, V GE =±15V.47 μc C ies Input Capacitance 3.6 nf C res Reverse Transfer Capacitance =25V, V GE =V, f =1MHz.16 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =5A R G =18Ω V GE =±15V Inductive Load =25 C 9 ns =125 C 9 ns =25 C 3 ns =125 C 5 ns =25 C 42 ns =125 C 52 ns =25 C 7 ns =125 C 9 ns =25 C 4.9 mj =125 C 6.6 mj =25 C 4. mj =125 C 4.9 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 2 A R thjc Junction-to-Case Thermal Resistance (Per ).48 K/W V F Forward Voltage =5A, V GE =V, =25 C 1.65 V =5A, V GE =V, =125 C 1.65 V t RR Reverse Recovery Time =5A, V R =6V 275 ns I RRM Max. Reverse Recovery Current di F /dt=12a/µs 5 A E rec Reverse Recovery Energy =125 C 4.4 mj R thjcd Junction-to-Case Thermal Resistance (Per ).78 K/W MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
3 12V 5A -Rectifier Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit V RRM Repetitive Reverse Voltage =25 C 16 V (AV) Average Forward Current =8 C 5 A RM I 2 t Non-Repetitive Surge Forward Current =45 C, t=1ms, 5Hz 35 =45 C, t=8.3ms, 6Hz 385 =45 C, t=1ms, 5Hz 612 =45 C, t=8.3ms, 6Hz 741 A A 2 s -Rectifier Electrical and Thermal Specifications ( V F I R R thjcd Forward Voltage Reverse Leakage Current Junction-to-Case Thermal Resistance (Per ) =5A, =25 C 1.1 V =5A, =125 C 1.5 V V R =16V, =25 C 5 μa V R =16V, =125 C 1 ma.68 K/W Brake-Chopper Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 55 A =8 C 4 A I CM Repetitive Peak Collector Current t p =1ms 8 A P tot Dissipation Per 195 W V RRM Repetitive Reverse Voltage =25 C 12 V (AV) =25 C 25 A Average Forward Current =8 C 15 A RM Repetitive Peak Forward Current t p =1ms 3 A I 2 t =125 C, t=1ms, V R =V 6 A 2 s MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
4 12V 5A Brake-Chopper Electrical and Thermal Characteristics ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =1.5mA V (sat) Collector - Emitter I C =4A, V GE =15V, =25 C 1.8 V Saturation Voltage I C =4A, V GE =15V, =125 C 2.5 V I ICES Collector Leakage Current =12V, V GE =V, =25 C.25 μa =12V, V GE =V, =125 C 2 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 6 Ω Q ge Gate Charge =6V, I C =4A, V GE =±15V.33 μc C ies Input Capacitance 2.5 nf C res Reverse Transfer Capacitance =25V, V GE =V, f =1MHz.11 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =4A R G =27Ω V GE =±15V Inductive Load =25 C 9 ns =125 C 9 ns =25 C 3 ns =125 C 5 ns =25 C 42 ns =125 C 52 ns =25 C 7 ns =125 C 9 ns =25 C 4.1 mj =125 C 6. mj =25 C 3.1 mj =125 C 3.6 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 16 A R thjc V F Junction-to-Case Thermal Resistance (Per ) Forward Voltage.62 K/W =15A, V GE =V, =25 C 1.65 V =15A, V GE =V, =125 C 1.75 V t RR Reverse Recovery Time =15A, V R =6V 15 ns I RRM Max. Reverse Recovery Current di F /dt=-4a/µs 15 A E rec Reverse Recovery Energy =125 C 1.15 mj R thjcd Junction-to-Case Thermal Resistance (Per ) 1.55 K/W NTC Characteristics ( R 25 Resistance T c =25 C 5 KΩ B 25/ K MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
5 12V 5A Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics V GE =15V V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =125 C V V Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor 1 8 =2V 12 1 =6V I C=5A V GE=±15V 6 4 Eon Eoff (mj) E on E off V GE V R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 2 16 =6V R G=18Ω V GE=±15V 12 1 Eon Eoff (mj) E on E off R G= 18Ω V GE=±15V I C A V 14 MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
6 12V 5A Figure 7: Forward Characteristics for Inverter Figure 8: Switching Energy vs. Gate Resistort for Inverter =5A =6V IF (A) 6 4 Erec (mj) V V F R G Ω Figure 9: Switching Energy vs. Forward Current for Inverter Figure 1: Transient Thermal Impedance of and Inverter R G=18Ω =6V 1 Erec (mj) 4. thjc (K/W) Z (A) Rectangular Pulse Duration (seconds) Figure 11: Forward Characteristics Figure 12: Typical Output Characteristics for Brake Chopper 1 8 V GE =15V 8 6 IF (A) V F V V 3.5 MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
7 12V 5A Figure 13: Forward Characteristics for Brake Chopper Figure 14: NTC Characteristics V=25A GE =15V =6V T Vj =125 C IF (A) R ( ) 1 T Vj =25 C R T Vj =125 C V F V C Circuit Diagram Part Numbering System Part Marking System MG125 W-XBN2MM PRODUCT TYPE ASSEMBLY SITE M: MODULE TYPE WAFER TYPE G: VOLTAGE RATING CIRCUIT TYPE 12: 12V XB: XB CURRENT RATING PACKAGE TYPE 5: 5A W: Package W MG125W-XBN2MM LOT NUMBER Space reserved for QR code MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
8 12V 5A Packing Options Part Number Marking Weight Packing Mode M.O.Q MG125W-XBN2MM MG125W-XBN2MM 3g Bulk Pack 2 Dimensions-Package W Ø Dimensions (mm) MG125W-XBN2MM Littelfuse, Inc Revised:12/4/14
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 2 sixpack topology, 12, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Sixpack topology 12, 75 A IGBTs and
< IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) Collector current I C...... 75A Collector-emitter voltage CES... 2 Maximum junction temperature T jmax... 75 C Flat base Type APPLICATION AC Motor Control, Motion/Servo
n-channel TO-220AB 1
PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,
Features / Advantages: Applications: Package: SMPD
XP GB x 100 CES 8 C CE(sat) 1.8 SOPLUS Surface Mount Power Device Phase leg SCR / GB Part number 1 9 Backside: isolated E36641 3 6 7 4 8 Features / dvantages: pplications: Package: SMPD XP GB - low saturation
n-channel Features 1 TO-247AD Pulse Collector CurrentÃc 82 I LM
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFRED TM ultrafast
< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 5A Collector-emitter voltage
Features. n-channel TO-220AB. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5 khz, and Short Circuit Rated to µs @ 25 C, V GE
T C = 25 C 400 T C = 80 C 300 A
APTGT3A17D3G Phase leg Trench + Field Stop IGBT3 Power Module CES = 17 I C = 3A @ Tc = 8 C 4 Q1 3 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
n-channel D 2 Pak 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses
V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
Rectifier with Chopper
STARPOWER SEMICONDUCTOR TM Rectifier with Chopper RD100PBH160C5S Preliminary Molding Type Module 1600V/100A General Description STARPOWER Rectifier Diode Power Module provides ultra low conduction loss.they
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
AOT15B65M1/AOB15B65M1
AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
MPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode
Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >
CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives,
Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A
Insulated Gate Bipolar Transistor (Trench IGBT), 65 V, A VS-GTDA65U SOT-7 PRIMARY CHARACTERISTICS V CES 65 V I C DC A at 9 C V CE(on) typical at A, 5 C.7 V I F DC 76 A at 9 C Speed 8 khz to 3 khz Package
V23990-P589-A41-PM target datasheet. Maximum Ratings. Types. Tj=25 C, unless otherwise specified. Input Rectifier Diode. Inverter Transistor
2399-P589-41-PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.
AOTBM/AOBBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode
DIM1000ACM33-TS001. IGBT Chopper Module DIM1000ACM33-TS001 FEATURES KEY PARAMETERS V CES
IGBT Chopper Module DS6246-1 July 2018 (LN35934) FEATURES 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AODBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
Data Sheet GHIS040A060S A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =600V I C = 40A @T C = 100 0 C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz Low leakage
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
V A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultrafast Recovery