Silicon FS Trench IGBT BT40T60 ANFU

Transcription

1 Silicon FS Trench IGBT BT40T60 ANFU General Description: Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. V CES 600 V I C 40 A P tot (T C =25 ) 280 W V CE(sat) 1.9 V Features: FS Trench Technology, Positive temperature coefficient Low saturation voltage: V CE(sat), typ= I C = 40A and T C = 25 C RoHS Compliant Applications: Welding Solar Inverter UPS Absolute Maximum Ratings(Tj= 25 unless otherwise specified): Symbol Parameter Rating Units V CES Collector-Emitter Voltage 600 V V GES Gate- Emitter Voltage ±20 V I C a1 I CM Collector Current@TC=25 80 A Collector = 100 C 40 A Pulsed Collector Current@TC= A I F Diode Continuous Forward C = 100 C 20 A I FM Diode Maximum Forward Current 100 A Power T C = 25 C 280 W P D Power C = 100 C 110 W Power A = 25 C W T J, T stg Operating Junction and Storage Temperature Range -55 to +150 T L Maximum Temperature for Soldering 270 a1 :Repetitive rating; pulse width limited by maximum junction temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of7 2017V01

2 Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction to case for IGBT /W RθJC Thermal Resistance, Junction to case for Diode /W RθJA Thermal Resistance, Junction to Ambient /W Electrical Characteristics of the IGBT(T j = 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V (BR)CES Collector-Emitter Breakdown Voltage V GE =0V,I CE =250uA V I CES Collector-Emitter Leakage Current V GE =0V V CE = 600V ma I GES(F) Gate to Emitter Forward Leakage V GE =+20V na I GES(R) Gate to Source Reverse Leakage V GE =-20V na ON Characteristics V CE(sat) Collector-Emitter Saturation Voltage,V GE =15V V V GE(th) Gate Threshold Voltage I C =1mA,V CE =V GE V Pulse width tp 300µs,δ 2% Dynamic Characteristics C ies Input Capacitance V CE =30V,V GE =0V C oes Output Capacitance f=1mhz C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-on Delay Time t r Rise Time V CE =400V, ns t d(off) Turn-Off Delay Time V GE =15V, R g =10Ω t f Fall Time Inductive Load, E on Turn-On Switching Loss Tj= E off Turn-Off Switching Loss mj E ts Total Switching Loss Q g Total Gate Charge V CE =400V, Q ge Gate to Emitter Charge nc V GE =15V Q gc Gate to Collector Charge Electrical Characteristics of the DIODE(T j = 25 unless otherwise specified): Symbol Parameter Test Conditions Min. Typ. Max. Units V F Diode Forward Voltage I F =20A V t rr Reverse Recovery Time ns I F =20A I rrm Reverse Recovery Current A di/dt=200a/us Q rr Reverse Recovery Charge nc Pulse width t tp 300µs,δ 2% WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of V01

3 Typical Performance Characteristics V GE = 19V V GE = 19V 17V 13V 17V 15V T J =25 11V T J =125 9V 15V 13V 11V 9V Figure 1.Output Characteristics Figure 2.Output Characteristics 80 V GE =15V V GE =15V T J =25 T J =125 I C =80A I C =20A Figure 3.Saturation Voltage Characteristics Case Temperature, T C ( ) Figure 4.Saturation Voltage T C Characteristics T C =25 I C =80A T C =125 I C =80A I C =20A I C =20A Gage-Emitter Voltage, V GE (V) Figure 5.V CE(sat) V GE Characteristics Gate-Emitter Voltage, V GE (V) Figure 6.V CE(sat) V GE Characteristics WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of V01

4 V GE =0V, f=1mhz T C =25 t d(off) Capacitance, (pf) Cies Switching Time, (ns) t r t f t d(on) Cres Coes, T C =25 Figure 7.Capacitance Characteristics Gate Resistance, R G (Ω) Figure 8.Switching Time-R G Characteristics, T C =25 E ts R G =10Ω, T C =25 Switching Loss, (mj) E (on) Switching Time, (ns) t r t d(off) t f t d(on) E off Gate Resistance, R G (Ω) Figure 9.Switching Loss-R G Characteristics Figure 10.Switching Time-I C Characteristics R G =10Ω, T C =25 Switching Loss, (mj) E ts E (on) E off DC Single Non-repetitive Pulse T C =25, Curves must be derated linearly with increase in temperature. 50µs 100µs 1ms Figure 11.Switching Loss-I C Characteristics Figure 12.Forward Bias Safe Operating Area WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of V01

5 V CE =100V Power Dissipation, P TOT (W) Gate-Emitter Voltage, V GE (V) V CE =480V Case Temperature T C ( ) Figure 13.Power Dissipation-T C Characteristics Gage Charge, Q g (nc) Figure 14.Gage Charge Characteristics Forward Current, I F (A) T J =25 T J =85 T J =125 Reverse Current, I R (µa) T J =25 T J =125 Forward Voltage, V F (V) Figure 15.Diode Forward Characteristics Reverse Voltage, V R (V) Figure 16. Diode Reverse Characteristics Figure 17.IGBT Transient Thermal Impedance WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of V01

6 Package Information: *:adjustable Items Values(mm) MIN MAX A B C D E F G G H I L* N TO-3P(N) Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of V01

7 The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% 0.1% 0.1% 0.1% 0.1% Lead Frame Molding Chip Wire Bonding Solder :Means the hazardous material is under the criterion of 2011/65/EU. Note :Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. IGBTs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail: crhj.com.cn Tel: Fax: Marketing Part: Post: Tel / Fax: / (Fax) Application and Service:Post: Tel / Fax: / 2227 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of V01