Silicon N-Channel Power MOSFET CS18N20F A9R
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1 Silicon N-Channel Power MOSFET CS18N2F A9R General Description: CS18N2F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 2 V I D 18 A P D (T C =25 ) 35 W R DS(ON)Typ.12 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22F, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson.18Ω) Low Gate Charge (Typical Data:2.4nC) Low Reverse transfer capacitances(typical:16.4pf) 1% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 2 V I D I DM a1 Continuous Drain Current 18 A Continuous Drain Current T C = 1 C 11.3 A Pulsed Drain Current 72 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 5 mj dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation 35 W Derating Factor above 25 C.28 W/ T J,T stg Operating Junction and Storage Temperature Range 15, 55 to 15 T L Maximum Temperature for Soldering 3 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 1 216V1
2 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current Unit V DS =2V, V GS= V, T a = µa V DS =16V, V GS= V, T a = µa I GSS(F) Gate to Source Forward Leakage V GS =+3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=1V,I D=9A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. g fs Forward Transconductance V DS=15V, I D =9A S C iss Input Capacitance V GS = V V DS = 25V f = 1.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance s Units Units pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time I D =18A V DD =1V R G =1Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =18A V DD =16V V GS = 1V Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 1 216V1
3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. Units I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=18A,V GS=V V trr Reverse Recovery Time I S=18A,T j = 25 di F/dt=1A/us, V GS=V ns Qrr Reverse Recovery Charge nc I RRM Reverse Recovery Current A Pulse width tp 3µs,δ 2% Symbol Parameter Max. Units RθJC Junction-to-Case 3.57 /W RθJA Junction-to-Ambient 62.5 /W a1 :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=1mH, I D =1A, Start T J =25 a3 :I SD =18A,di/dt 1A/us,V DD BV DS, Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 1 216V1
4 Characteristics Curve: 1 4 Id, Drain Current, Amps OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse DC 1us 1ms 1ms PD, Power Dissipation,Watts Vds, Drain-to-Source Voltage, Volts Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature TC, Case Temperature, C 25us Pluse Test Tc = 25 Id, Drain Current, Amps 18 9 Id, Drain Current, Amps V GS=1V V GS=7V V GS=8V V GS=6V V GS=5V TC, Case Temperature, C Figure 3 Maximum Continuous Drain Current vs Case Temperature Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impendance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 1 216V1
5 Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics Rds(on), Drain to Source ON Resistance, Ohms PULSE DURATION = 1μs DUTY CYCLE=.5%MAX Tc =25 V GS=1V Id, Drain Current, Amps Figure 8 Typical Drain to Source ON Resistance vs Drain Current Rds(on), Drain to Source ON Resistance, Nomalized PULSE DURATION = 1μs DUTY CYCLE=.5%MAX VGS=1V ID= Tj, Junction temperature, C Figure 9 Typical Drian to Source on Resistance vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 1 216V1
6 Vgs(th),Threshold Voltage, Nomalized VGS=V ID=25μA Tj, Junction temperature, C Figure 1 Typical Theshold Voltage vs Junction Temperature Bvdss,Drain to Source Breakdown Voltage, Normalized VGS=V ID=25μA Tj, Junction temperature, C Figure 11 Typical Breakdown Voltage vs Junction Temperature 12 V GS=V, f=1mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Ciss Coss Crss Vgs, Gate to Source Voltage,Volts VDS= I D=18A Qg, Total Gate Charge, nc Figure 12 Typical Capacitance vs Drain to Source Voltage Figure 13 Typical Gate Charge vs Gate to Source Voltage WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 1 216V1
7 Test Circuit and Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 1 216V1
8 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 1 216V1
9 Package Information: Items Values(mm) MIN MAX A B B C C D E.6 1. F.3.6 G H L* N Q *:adjustable TO-22F Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 1 216V1
10 Limit The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP.1%.1%.1%.1%.1%.1%.1%.1%.1%.1% Lead Frame Molding Chip Wire Bonding Solder Note :Means the hazardous material is under the criterion of 211/65/EU. :Means the hazardous material exceeds the criterion of 211/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:21461 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:21461 Tel: / Fax: / sales@hj.crmicro.com Application and Service:Post:21461 Tel / Fax: / WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 1 216V1
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More informationThermal Resistance Symbol Parameter Max. Units Test Conditions
N-Channel MOSFET Applications: Adaptor Charger SMPS Lead Free Package and Finish V DSS R DS(ON) (Typ.) I D 400V 0.8Ω 5A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse
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, HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V
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More informationDEVICE SPECIFICATION. Symbol Parameter apq10sn40a Units
1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationFeatures. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
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More informationTO-220F PKG. Total Power Dissipation ) W Derating Factor above W/
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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