EZ20N60. General Description: Features: Applications:
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1 EZ2N6 General Description: EZ2N6, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 6 V I D 2 A P D (T C =25 ) 25 W R DS(ON)Typ.3 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22AB, which accords with the RoHS standard.. Features: Fast Switching Low ON Resistance(Rdson.35Ω) Low Gate Charge (Typical Data:6nC) Low Reverse transfer capacitances(typical: 2pF) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter V DSS Drain-to-Source Voltage 6 V I D I DM a Continuous Drain Current 2 A Continuous Drain Current T C = C 4 A Pulsed Drain Current 8 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 2 mj a E AR Avalanche Energy,Repetitive mj a I AR Avalanche Current 4.5 A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation 25 W Derating Factor above 25 C 2. W/ T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3
2 EZ2N6 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current V DS = 6V, V GS= V, T a = V DS =48V, V GS= V, T a = 25 I GSS(F) Gate to Source Forward Leakage V GS= 3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na ON Characteristics R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics g fs Forward Trans conductance V DS=5V, I D =A S C iss Input Capacitance V GS = V V DS = 25V f =.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance -- 2 µa pf Resistive Switching Characteristics t d(on) Turn-on Delay Time I D =2A V DD = 3V R G = 25Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =2A V DD =3V V GS = V -- 6 Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge ns nc
3 EZ2N6 Source-Drain Diode Characteristics I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=2A,V GS=V V trr Reverse Recovery Time I S=2A,T j = 25 C ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge µc Pulse width tp 3µs,δ 2% Symbol Parameter Typ. R θjc Junction-to-Case.5 /W R θja Junction-to-Ambient 62 /W a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=mH, I D =5.5A, Start T J =25 a3 :I SD =2A,di/dt 2A/us,V DD BV DSS, Start T J =25
4 EZ2N6 Characteristics Curve: OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse. Vds, Drain-to-Source Voltage, Volts Figure Maximum Forward Bias Safe Operating Area DC μs μs ms ms Pd, Power Dissipation,Watts Tc, Case Temperature, C Figure 2 Maximum Power Dissipation vs Case Temperature First: 5V 8V 7V 6.5V 6V Sixth: 5.5V First Sixth PULSE TEST Tc = TC, Case Temperature, C Figure 3 Maximum Continuous Drain Current vs Case Temperature Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Thermal Impedance, Normalized.. % 5% Single pulse 2% 5% % 2% Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM*Z thjc*r thjc+t C
5 EZ2N6 Idm, Peak Current, Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I T C V GS=V.E-5.E-4.E-3.E-2.E- t Pulse Width, Seconds.E+.E+ Figure 6 Maximun Peak Current Capability PULSED TEST VDS=5V Rds(on), Drain to Source ON Resistance, Ohms I D= 8A I D= 9A I D = 4.5A PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =25 Rds(on), Drain to Source ON Resistance, Ohms Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics PULSED TEST Tc =25-55 V GS=V V GS=2V Figure 9 Typical Drain to Source ON Resistance vs Drain Current Rds(on), Drain to Source ON Resistance, Nomalized Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current VGS=V ID=3.A Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature
6 EZ2N6 Vgs(th),Threshold Voltage, Nomalized Capacitance, pf Isd, Reverse Drain Current, Amps VGS=V ID=25μA Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd. Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage PULSE V GS=V TEST 5 Crss 25 Ciss Coss Vsd, Source - Drain Voltage, Volts Figure 5 Typical Body Diode Transfer Characteristics Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs, Gate to Source Voltage,Volts Tj, Junction temperature, C Figure 2 Typical Breakdown Voltage vs Junction Temperature Qg, Total Gate Charge, nc..e-6 VDD=2V ID=8A Tc =25 VDS=2V VDS=3V VDS=48V Figure 4 Typical Gate Charge vs Gate to Source Voltage If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit VGS=V ID=25μA STARTING Tj = 25 STARTING Tj = 5.E-5.E-4.E-3.E-2.E- tav, Time in Avalanche, Seconds Figure 6 Unclamped Inductive Switching Capability
7 Test Circuit and Waveform EZ2N6
8 EZ2N6
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400V N-Channel MOSFET Features RDS(ON) (Max 0.55Ω) @ VGS=10V Gate Charge : 46.0 nc (Typical) Improved dv/dt capability 100% EAS Tested TO-220F PKG BVDSS RDS(ON) MAX ID 400V 0.55Ω 10A TO-220 PKG SFF SFP
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September, 2013 SJ-FET TSD5N60S/TSU5N60S OSD5N60S/OSU5N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism
More informationSymbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*
TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
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AOWT6P/AOWFT6P 6V,A NChannel MOSFET General Description Trench Power AlphaMOSII technology Low R DS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary V DS @
More informationSSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
More informationN-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
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TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
More informationFeatures. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationThermal Resistance Symbol Parameter Max. Units Test Conditions
N-Channel MOSFET Applications: Adaptor Charger SMPS Lead Free Package and Finish V DSS R DS(ON) (Typ.) I D 400V 0.8Ω 5A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse
More informationTO-220 G D S. T C = 25 C unless otherwise noted
500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationSUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 600V Super Junction Power Transistor SS*20N60S. Rev. 1.
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HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
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800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
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More informationTO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc
MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching
More informationI D (at V GS =10V) 2.8A. R DS(ON) (at V GS =10V) < 4.8Ω. 100% UIS Tested! 100% R g Tested!
AODN8 8V,.8A NChannel MOSFET General Description The AODN8 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
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