Silicon N-Channel Power MOSFET CS8N65F A9H. V DSS 650 V I D 8 A P D (T C =25 ) 45 W R DS(ON)Typ 0.9 Ω
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1 Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 65 V I D 8 A P D (T C =5 ) 45 W R DS(ON)Typ.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-F, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson.3Ω) Low Gate Charge (Typical Data:8nC) Low Reverse transfer capacitances(typical:4pf) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 5 unless otherwise specified): Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 65 V I D I DM a Continuous Drain Current 8 A Continuous Drain Current T C = C 5.5 A Pulsed Drain Current 3 A V GS Gate-to-Source Voltage ±3 V E AS a E AR a I AR a Single Pulse Avalanche Energy 5 mj Avalanche Energy,Repetitive 4 mj Avalanche Current.8 A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Derating Factor above 5 C.36 W/ Power Dissipation 45 W T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 5V
2 Electrical Characteristics(Tc= 5 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=V, I D=5µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=5uA,Reference V/ I DSS Drain to Source Leakage Current V DS = 65V, V GS= V, T a = V DS =5V, V GS= V, T a = I GSS(F) Gate to Source Forward Leakage V GS =+3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=4.A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 5µA. 4. V Pulse width tp 38µs,δ % Dynamic Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. g fs Forward Trans conductance V DS=5V, I D =4A S C iss Input Capacitance V GS = V V DS = 5V f =.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance Units µa Units Units pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time I D =8.A V DD = 35V V GS = V R G = 9.Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =8.A V DD =35V V GS = V -- 8 Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 5V
3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. Units I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=8.A,V GS=V V trr Reverse Recovery Time I S=8.A,T j = 5 C ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge uc Pulse width tp 38µs,δ % Symbol Parameter Typ. Units R θjc Junction-to-Case.78 /W R θja Junction-to-Ambient /W a :Repetitive rating; pulse width limited by maximum junction temperature a :L=.mH, I D =A, Start T J =5 a3 :I SD =8A,di/dt A/us,V DD BV DS, Start T J =5 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 5V
4 Characteristics Curve: 7 Id, Drain Current, Amps Id, Drain Current,Amps.. Vds, Drain-to-Source Voltage, Volts Figure Maximum Forward Bias Safe Operating Area OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=5 Single Pulse μs ms ms DC Pd, Power Dissipation,Watts Id, Drain Current, Amps Tc, Case Temperature, C Figure Maximum Power Dissipation vs Case Temperature V GS=V V GS=8V V GS=6V V GS=7V V GS=9V Tc, Case Temperature,C Figure 3 Maximum Continuous Drain Current vs Case Temperature Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Thermal Impedance, Normalized. 5% % % 5% Single pulse % % PDM t t NOTES: DUTY FACTOR :D=t/ t PEAK Tj=P DM*Z thjc*r thjc+t C Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 5V
5 Id, Drain Current,Amps Idm, Peak Current, Amps.E-5.E-4.E-3.E-.E- t Pulse Width, Seconds Figure 6 Maximun Peak Current Capability V GS=V PULSED TEST VDS=3V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION Rds(on), Drain to Source ON Resistance, Ohms 3 FOR TEMPERATURES ABOVE 5 DERATE PEAK CURRENT AS FOLLOWS: I = I I D= 8A I D= 4A I D= A T C.E+.E+ PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =5 Rds(on), Drain to Source ON Resistance, Ohms Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics. PULSED TEST Tc = V GS=V Id, Drain Current, Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 3 Rds(on), Drain to Source ON Resistance, Nomalized PULSED TEST VGS=V ID=.5A Tj, Junction temperature,c Figure Typical Drian to Source on Resistance vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 5V
6 Vgs(th),Threshold Voltage, Nomalized VGS=V ID=5μA Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature Bvdss,Drain to Source Breakdown Voltage, Normalized VGS=V ID=5μA Tj, Junction temperature, C Figure Typical Breakdown Voltage vs Junction Temperature Capacitance, pf V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Coss Ciss Vgs, Gate to Source Voltage,Volts VDS=48V I D= 8A 6 Crss Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage Qg, Total Gate Charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage Isd, Reverse Drain Current, Amps V GS=V Vsd, Source - Drain Voltage, Volts Id, Drain Current, Amps..E-6 If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit STARTING Tj = 5 STARTING Tj = 5.E-5.E-4.E-3.E-.E- tav, Time in Avalanche, Seconds Figure 5 Typical Body Diode Transfer Characteristics Figure 6 Unclamped Inductive Switching Capability WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 5V
7 Test Circuit and Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 5V
8 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 5V
9 Package Information: Items Values(mm) MIN MAX A B C C. 3. D.4 3. E.6. F.3.6 G..4 H L N TO-F Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 5V
10 The name and content of poisonous and harmful material in products Hazardous Substance Part s Name Pb Hg Cd Cr(VI) PBB PBDE Limit.%.%.%.%.%.% Lead Frame Molding Compound Chip Wire Bonding Solder Note :means the hazardous material is under the criterion of SJ/T :means the hazardous material exceeds the criterion of SJ/T The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximum ratings of the device.. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.4 Liangxi RD. Wuxi, Jiangsu, China Mail:46 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:46 Tel: / Fax: / sales@hj.crmicro.com Application and Service:Post:46 Tel / Fax: /885 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 5V
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Dual N - Channel Enhancement Mode Power MOSFET 4 344 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or
More informationI2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 650 V. Symbol Parameter SLB10N65S SLI10N65S Units R θjc
SLB10N65S/ SLI10N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
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PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationTO-220 G D S. T C = 25 C unless otherwise noted
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More informationT C =25 unless otherwise specified. A I DM Pulsed Drain Current, V [2] Figure 6 P D. 270 mj dv/dt Peak Diode Recovery dv/dt [3] 4.
400V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 8.6nC) Fast Switching 00% Avalanche Tested RoHS Compliant/Lead Free BV DSS R DS(ON) (Max.) I D 400V.0Ω 5.5A Applications
More informationTO-220F PKG. Total Power Dissipation ) W Derating Factor above W/
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General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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More informationThermal Resistance Symbol Parameter Max. Units Test Conditions
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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