EZ8N60. General Description: Features: Applications:
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1 EZ8N6 General Description: EZ8N6, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 6 V I D 8 A P D (T C =25 ) 95 W R DS(ON)Typ. Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22AB,which accords with the RoHS standard. Features: Fast Switching ESD Improved Capability Low Gate Charge (Typical Data: 25nC) Low Reverse transfer capacitances(typical: pf) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter V DSS Drain-to-Source Voltage 6 V I D I DM a Continuous Drain Current 8 A Continuous Drain Current T C = C 5.4 A Pulsed Drain Current 32 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 45 mj a E AR Avalanche Energy,Repetitive 3 mj a I AR Avalanche Current 2.5 A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation 95 W Derating Factor above 25 C.76 W/ V ESD(G-S) Gate source ESD (HBM-C= pf, R=.5kΩ) 3 V T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3
2 EZ8N6 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current Unit V DS =6V, V GS= V, T a = µa V DS =48V, V GS= V, T a = µa I GSS(F) Gate to Source Forward Leakage V GS =+2V µa I GSS(R) Gate to Source Reverse Leakage V GS =-2V µa ON Characteristics R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=4A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics g fs Forward Trans conductance V DS=5V, I D =4A 5 -- S C iss Input Capacitance V GS = V V DS = 25V f =.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance -- s pf Resistive Switching Characteristics t d(on) Turn-on Delay Time I D =8A V DD = 3V R G =9.Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =8A V DD =3V V GS = V Q gs Gate to Source Charge -- 4 Q gd Gate to Drain ( Miller )Charge -- ns nc
3 EZ8N6 Source-Drain Diode Characteristics I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=8.A,V GS=V V trr Reverse Recovery Time I S=8.A,T j = 25 C ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge nc Pulse width tp 3µs,δ 2% Symbol Parameter Typ. RθJC Junction-to-Case.32 /W RθJA Junction-to-Ambient 62.5 /W Gate-source Zener diode V GSO Gate-source breakdown voltage I GS= ±ma(open Drain) 3 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components. a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=mH, I D =9.5A, Start T J =25 a3 :I SD =8A,di/dt A/us,V DD BV DS, Start T J =25
4 EZ8N6 Characteristics Curve: OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse ms ms ms Vds, Drain-to-Source Voltage, Volts Figure Maximum Forward Bias Safe Operating Area DC Pd, Power Dissipation,Watts Figure 2 Maximum Power Dissipation vs Case Temperature Tc, Case Temperature, C V GS=5V PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =25 V GS=6.5V V GS=4.5V V GS=7V V GS=6V V GS=5.5V Thermal Impedance, Normalized TC, Case Temperature, C Figure 3 Maximum Continuous Drain Current vs Case Temperature.. 5% 2% % 5% Single pulse % 2% Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM*Z thjc*r thjc+t C
5 EZ8N6 Idm, Peak Current, Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I T C Rds(on), Drain to Source ON Resistance, Ohms.E E-4 PULSE DURATION = μs DUTY CYCLE =.5%MAX VDS=3V Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics PULSE DURATION = μs DUTY CYCLE=.5%MAX Tc =25 V GS=2V Figure 9 Typical Drain to Source ON Resistance vs Drain Current.E-3.E-2 t, Pulse Width, Seconds.E-.E+.E+ Figure 6 Maximun Peak Current Capability 3.6 PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =25 Rds(on), Drain to Source ON Resistance, Ohms Rds(on), Drain to Source ON Resistance, Nomalized I D= 8A I D= 4A I D= 2A Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 PULSE DURATION = μs DUTY CYCLE=.5%MAX VGS=V ID=.2.5A Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature 4
6 EZ8N6 Vgs(th),Threshold Voltage, Nomalized VGS=V ID=25μA Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature Bvdss,Drain to Source Breakdown Voltage, Normalized VGS=V ID=25μA Tj, Junction temperature, C Figure 2 Typical Breakdown Voltage vs Junction Temperature Capacitance, pf. Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage 8 V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Ciss Coss Crss Vgs, Gate to Source Voltage,Volts VDS=5V VDS=3V VDS=4V I D=6A Qg, Total Gate Charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage Isd, Reverse Drain Current, Amps Vsd, Source - Drain Voltage, Volts Figure 5 Typical Body Diode Transfer Characteristics STARTING Tj = 25 STARTING Tj = 5 If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit..e-6.e-5.e-4.e-3.e-2.e-.e+ tav,time in Avalanche,Seconds Figure 6 Unclamped Inductive Switching Capability
7 Test Circuit and Waveform EZ8N6
8 EZ8N6
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