Huajing Discrete Devices Silicon N-Channel Power MOSFET
|
|
- Sharon Henderson
- 5 years ago
- Views:
Transcription
1 Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 5 V I D 4 A P D (T C =5 ) 75 W R DS(ON)Typ Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-5, which accords with the RoHS standard. Features: Fast Switching ESD Improved Capability Low Gate Charge (Typical Data: 4.5nC) Low Reverse transfer capacitances(typical: 8.5pF) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 5 unless otherwise specified): Symbol Parameter Units V DSS Drain-to-Source Voltage 5 V I D I DM a Continuous Drain Current 4 A Continuous Drain Current T C = C. A Pulsed Drain Current A V GS Gate-to-Source Voltage ± V a E AS Single Pulse Avalanche Energy 5 mj a E AR Avalanche Energy,Repetitive mj a I AR Avalanche Current.5 A dv/dt a Peak Diode Recovery dv/dt 5. V/ns Power Dissipation 75 W P D Derating Factor above 5 C. W/ V ESD(G-S) Gate source ESD (HBM-C= pf, R=.5kΩ) V T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L MaximumTemperature for Soldering WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of
2 Electrical Characteristics(Tc= 5 unless otherwise specified): OFF Characteristics V DSS Drain to Source Breakdown Voltage V GS =V, I D =5µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=5uA,Reference V/ I DSS Drain to Source Leakage Current V DS =5V, V GS = V, Unit T a = µa V DS =5V, V GS = V, T a = µa I GSS(F) Gate to Source Forward Leakage V GS =+V µa I GSS(R) Gate to Source Reverse Leakage V GS =-V µa ON Characteristics R DS(ON) Drain-to-Source On-Resistance V GS =V,I D =A --.5 Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 5µA. 4. V Pulse width tp 8µs,δ % Dynamic Characteristics g fs Forward Transconductance V DS =5V, I D =A.5 -- S C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance V GS = V V DS = 5V f =.MHz s Units Units pf Resistive Switching Characteristics t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time I D =4A V DD = 5V R G =Ω Q g Total Gate Charge Q gs Gate to Source Charge -- Q gd Gate to Drain ( Miller )Charge I D =4A V DD =5V V GS = V -- Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of
3 Source-Drain Diode Characteristics I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S =4.A,V GS =V V trr Reverse Recovery Time I S =4.A,T j = 5 C ns Qrr Reverse Recovery Charge Pulse width tp 8µs,δ % Units di F /dt=a/us, V GS =V µc Symbol Parameter Typ. Units RθJC Junction-to-Case.7 /W RθJA Junction-to-Ambient.5 /W Gate-source Zener diode V GSO Gate-source breakdown voltage I GS = ±ma(open Drain) V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components. Units a :Repetitive rating; pulse width limited by maximum junction temperature a :L=mH, I D =5.5A, Start T J =5 a :I SD =4A,di/dt A/us,V DD BV DS, Start T J =5 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of
4 Characteristics Curve: OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J =MAX RATED T C =5 Single Pulse Vds, Drain-to-Source Voltage, Volts Figure Maximun Forward Bias Safe Operating Area DC ms ms ms PD, Power Dissipation,Watts TC, Case Temperature, C Figure Maximun Power Dissipation vs Case Temperature V GS =5V PULSE DURATION=μs DUTY FACTOR=.5%MAX Tc = 5 V GS =.5V V GS =4.5V V GS =7V V GS =V V GS =5.5V Thermal Impedance, Normalized TC, Case Temperature, C Figure Maximum Continuous Drain Current vs Case Temperature.. 5% % % 5% Single pulse % % Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics PDM t t NOTES: DUTY FACTOR :D=t/ t PEAK Tj=P DM *Z thjc *R thjc +T C
5 Idm, Peak Current, Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 5 DERATE PEAK CURRENT AS FOLLOWS: I = I T C.E E-4 PULSE DURATION = μs DUTY CYCLE =.5%MAX V DS =V E-.E- t, Pulse Width, Seconds.E-.E+.E+ Figure Maximun Peak Current Capability PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =5 Rds(on), Drain to Source ON Resistance, Ohms 5 4 I D = 4A I D = A I D = A Rds(on), Drain to Source ON Resistance, Ohms Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics PULSE DURATION = μs DUTY CYCLE=.5%MAX Tc =5 V GS =V 4 Figure 9 Typical Drain to Source ON Resistance vs Drain Current Rds(on), Drain to Source ON Resistance, Nomalized Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current PULSE DURATION = μs DUTY CYCLE=.5%MAX VGS=V ID=A Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of
6 Vgs(th),Threshold Voltage, Nomalized VGS=V ID=5μA Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature Bvdss,Drain to Source Breakdown Voltage, Normalized VGS=V ID=5μA Tj, Junction temperature, C Figure Typical Breakdown Voltage vs Junction Temperature Capacitance, pf 8 V GS =V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Ciss Coss Crss. Vds, Drain - Source Voltage, Volts Figure Typical Capacitance vs Drain to Source Voltage Vgs, Gate to Source Voltage,Volts 8 4 VDS=8V VDS=V VDS=48V I D =A Qg, Total Gate Charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage Isd, Reverse Drain Current, Amps Vsd, Source - Drain Voltage, Volts Figure 5 Typical Body Diode Transfer Characteristics STARTING Tj = 5 STARTING Tj = 5 If R=: t AV =(L* I AS ) / (.8V DSS -V DD ) If R : t AV =(L/R) In[IAS*R/ (.8V DSS -V DD )+] R equals total Series resistance of Drain circuit..e-.e-5.e-4.e-.e-.e-.e+ tav,time in Avalanche,Seconds Figure Unclamped Inductive Switching Capability WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of
7 TestCircuitandWaveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of
8 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of
9 Package Information: Items MIN Values(mm) MAX A..8 B 5.. C..5 D.4. E..8 E.7.9 F.4. G.8. L 9.7. L.7. H..9 M N.9.49 R. T.4. Y 5.. TO-5 Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of
10 The name and content of poisonous and harmful material in products Hazardous Substance Part s Name Pb Hg Cd Cr(VI) PBB PBDE Limit.%.%.%.%.%.% Lead Frame Molding Compound Chip Wire Bonding Solder :means the hazardous material is under the criterion of SJ/T-. Note :means the hazardous material exceeds the criterion of SJ/T-. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximun ratings of the device.. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink.. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.4 Liangxi RD. Wuxi, Jiangsu, China Mail:4 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:4 Tel: /885 Fax: /858 sales@hj.crmicro.com Application and Service:Post:4 Tel / Fax: /885 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of
Silicon N-Channel Power MOSFET CS8N60F A9D
Silicon N-Channel Power MOSFET CS8N6F A9D General Description: CS8N6F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationCS830 A4RD. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS8 A4RD General Description: CS8 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationCS3N40 A23. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS3N4 A3 General Description: CS3N4 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationCS7N70 ARD. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS7N7 ARD General Description: CS7N7 ARD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationSilicon N-Channel Power MOSFET CS2N60 A4H
Silicon N-Channel Power MOSFET CSN6 AH General Description: CSN6 AH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationCS10N70 A8HD-G. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CSN7 A8HD-G General Description: CSN7 A8HD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationCS952 A3. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS95 A3 General Description: CS95 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationCS3410 B3. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS34 B3 General Description: CS34 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationCS4N65 ARR. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CSN65 ARR General Description: CSN65 ARR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationSilicon N-Channel Power MOSFET CS8N65F A9H. V DSS 650 V I D 8 A P D (T C =25 ) 45 W R DS(ON)Typ 0.9 Ω
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS
More informationCS20N65 ANH. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS
More informationCS730F A9RD. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance
More informationSilicon N-Channel Power MOSFET CS20N65
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS
More informationSilicon N-Channel Power MOSFET CS12N70 ARH
Silicon N-Channel Power MOSFET CS2N7 ARH General Description: CS2N7 ARH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationSilicon N-Channel Power MOSFET CS18N20F A9R
Silicon N-Channel Power MOSFET CS18N2F A9R General Description: CS18N2F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS10N60F A9R-G
Silicon N-Channel Power MOSFET CS1N6F A9R-G General Description: CS1N6F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS8N65 ARH
Silicon N-Channel Power MOSFET CS8N65 ARH General Description: CS8N65 ARH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS5N50 A3R
Silicon N-Channel Power MOSFET CS5N5 A3R General Description: CS5N5 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationHuajing Discrete Devices Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CSN General Description: CSN A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
More informationHM5N90 Silicon N-Channel Power MOSFET. General Description: Features: Applications:
General Description: HM5N9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the V
More informationGeneral Description: Features: Applications:
General Description: HM2N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 65 V I D 2 A P D (T C
More informationEZ8N60. General Description: Features: Applications:
EZ8N6 General Description: EZ8N6, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 6 V I D 8 A P D (T
More informationSilicon N-Channel Power MOSFET CS5N50F A9R-G
Silicon N-Channel Power MOSFET CS5N5F A9R-G General Description: CS5N5F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS1N60 C4H-G
Silicon N-Channel Power MOSFET CSN6 C4H-G General Description: CSN6 C4H-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationCS4N70 A3HD-G. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS4N70 A3HD-G General Description: CS4N70 A3HD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction
More informationCS1N60 A1H. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CSN6 AH General Description: CSN6 AH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationHM3N90I. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
General Description: HM3N90I, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 900 V I D 3 A P D (T
More informationCS6N90 ARH-G. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS
More informationCS5N65 A4. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
Silicon N-Channel Power MOSFET CS5N65 A4 General Description: CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
More informationFTW20N50A. General Description
FTW2N5A General Description FTW2N5A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
More informationSilicon N-Channel Power MOSFET CS8N90F A9D
Silicon N-Channel Power MOSFET CS8N90F A9D General Description: CS8N90F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS6N80 A4R-G
Silicon N-Channel Power MOSFET CS6N80 A4R-G General Description: CS6N80 A4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationEZ20N60. General Description: Features: Applications:
EZ2N6 General Description: EZ2N6, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 6 V I D 2 A P D (T
More informationSilicon N-Channel Power MOSFET CS6N70F A9R-G
Silicon N-Channel Power MOSFET CS6N70F A9R-G General Description: CS6N70F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction
More informationSilicon N-Channel Power MOSFET CS14N25 A0R
Silicon N-Channel Power MOSFET CS14N25 A0R General Description: CS14N25 A0R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET GN12N65F A9
Silicon N-Channel Power MOSFET GN12N65F A9 General Description: GN12N65F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve
More informationSilicon N-Channel Power MOSFET CS22J60 AN
Silicon N-Channel Power MOSFET CS22J60 AN General Description: CS22J60 AN, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve
More informationSilicon N-Channel Power MOSFET HPD700R1K4MD
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance
More informationSilicon N-Channel Power MOSFET CS9N90 ANHD
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS
More informationSilicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS150N03 A8 General Description: CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve
More informationSilicon N-Channel Power MOSFET CS20J65F A9
Silicon N-Channel Power MOSFET CS20J65F A9 General Description: CS20J65F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve
More informationSilicon N-Channel Power MOSFET GN4N65 A3
Silicon N-Channel Power MOSFET GN4N65 A3 General Description: GN4N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve
More informationGOFORD C1N60B. Absolute(Tc= 25 unless otherwise specified): Page 1. General Description: Application. Fast Switching
GN6B General Description: The CN6B silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the
More informationSilicon N-Channel Power MOSFET HPU600R380PC
Silicon N-Channel Power MOSFET HPU600R380PC General Description: HPU600R380PC, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve
More informationSilicon N-Channel Power MOSFET CS31N03 A4
Silicon N-Channel Power MOSFET CS31N03 A4 General Description: CS31N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS90N03 A4
Silicon N-Channel Power MOSFET CS90N03 A4 General Description: CS90N03 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss,
More informationSilicon N-Channel Power MOSFET CS100N08 A0
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching V DSS 85 V I
More informationSilicon N-Channel Power MOSFET CS3205 A0
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance
More informationSilicon N-Channel Power MOSFET CS150N03 A8
Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance
More informationSilicon N-Channel Power MOSFET CS100N06 A8
Silicon N-Channel Power MOSFET CS100N06 A8 General Description: CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench V DSS 60 V I D (Silicon limited current) 90
More informationSilicon N-Channel Power Trench MOSFET CS16N06 AE-G
Silicon N-Channel Power Trench MOSFET CS16N06 AE-G R General Description: CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction
More informationSilicon N-Channel Power MOSFET CS2N10 AS-G
Silicon N-Channel Power MOSFET CS2N10 AS-G General Description: CS2N10 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench V DSS 100 V I D 1.5 A R DS(ON)Typ 170 mω technology
More informationSilicon N-Channel Power MOSFET CS300N04 A8
Silicon N-Channel Power MOSFET CS300N04 A8 General Description: CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss,
More informationSilicon N-Channel Power Trench MOSFET CS12N06 AE-G
Silicon N-Channel Power Trench MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching
More informationSilicon N-Channel Power MOSFET CS06N03 AQ2
Silicon N-Channel Power MOSFET CS06N03 AQ2 General Description: The CS06N03 AQ2 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load
More informationSilicon FS Trench IGBT BT40T60 ANFU
Silicon FS Trench IGBT BT40T60 ANFU General Description: Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. V CES
More informationTO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4 Amps,6 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N6 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationGP2M005A050CG GP2M005A050PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More information8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES
MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationPTU2N8 0/PTD2N8 0. Absolute Maximum Ratings Tc=25 unless other wise noted. Thermal Characteristics. Features. 600V N-Channel MOSFET
PTU2N8 0/PTD2N8 0 HIGH VOLTAGE N-Channel MOSFET 600V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :12 nc
More informationFeatures. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More information12N60 12N65 Power MOSFET
12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationSUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationT C =25 unless otherwise specified. A I DM Pulsed Drain Current, V [2] Figure 6 P D. 270 mj dv/dt Peak Diode Recovery dv/dt [3] 4.
400V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 8.6nC) Fast Switching 00% Avalanche Tested RoHS Compliant/Lead Free BV DSS R DS(ON) (Max.) I D 400V.0Ω 5.5A Applications
More informationSMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
More informationSymbol Parameter Value Units V DSS Drain to Source Voltage 400 V. Total Power Dissipation ) 40 W Derating Factor above 25 0.
400V N-Channel MOSFET Features RDS(ON) (Max 1.00Ω) @ VGS=10V Gate Charge : 18.0 nc (Typical) Improved dv/dt capability / Fast switching 100% EAS Tested BVDSS RDS(ON) MAX ID 400V 1.00Ω 6A TO-220F PKG General
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationTO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE
N-channel Enhanced mode TO-220F/TO-220 MOSFET Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@V GS =10V Low Gate Charge (Typ32 nc) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationN-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source
N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:
More informationN-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
More informationTHERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC
N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless
More informationSSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
More informationPDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationHRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationPOWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C
PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More information