Silicon N-Channel Power MOSFET CS300N04 A8
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1 Silicon N-Channel Power MOSFET CS300N04 A8 General Description: CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is V DSS 40 V I D (Silicon limited current) 300 A I D (Package limited) 120 A PD W R DS(ON)Typ 1.6 mω suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 2.0 mω) Low Gate Charge Low Reverse transfer capacitances % Single Pulse avalanche energy Test Applications: BLDC Motor drive applications Half-bridge and full-bridge topologies Synchronous rectifier applications DC/DC and AC/DC converters Absolute(Tj= 25 unless otherwise specified) Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 40 V I D I DM a1 Continuous Drain Current T C = 25 C 300 A Continuous Drain Current T C = C A Pulsed Drain Current T C = 25 C 1200 A V GS Gate-to-Source Voltage ±20 V a2 E AS Avalanche Energy 800 mj P D Power Dissipation T C = 25 C W Derating Factor above 25 C 2.17 W/ T J,T stg Operating Junction and Storage Temperature Range 150, 55 to 150 T L MaximumTemperature for Soldering 300 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of V01
2 Electrical Characteristics(Tj= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=0V, I D=250µA V V DS =40V, V GS= 0V, Tj = I DSS Drain to Source Leakage Current V DS =32V, V GS= 0V, µa Tj = I GSS(F) Gate to Source Forward Leakage V GS=20V na I GSS(R) Gate to Source Reverse Leakage V GS =-20V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=10V,I D=A mω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 250µA V Pulse width tp 300µs,δ 2% Units Units Dynamic Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. R g Gate resistance V GS=0V, V DS=0V, f=1mhz Ω C iss Input Capacitance V GS = 0V V DS = 25V f = 1.0MHz C oss Output Capacitance C rss Reverse Transfer Capacitance pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time V GS=10V,Rg=2.7Ω V DD=20V,Id=30A tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge Vgs=10V,Vdd=20V Id=A Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of V01
3 Source-Drain Diode Characteristics Symbol I S Parameter Continuous Source Current (Body Diode) Test Conditions T C = 25 C Rating Min. Typ. Max. Units A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=A,V GS=0V V trr Reverse Recovery Time I S=50A,T j = 25 C di F/dt=A/us, V GS=0V ns Qrr Reverse Recovery Charge nc Pulse width tp 300µs,δ 2% Symbol Parameter Max. Units RθJC Junction-to-Case 0.46 /W RθJA Junction-to-Ambient 62.5 /W a1 :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=0.1mH,Ias=126.5A Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of V01
4 Characteristics Curve: ID,Drain Current,A 0 10 Operation in This Area is Limited by RDS(on) DC SINGLE PULSE TC=25 TJ= VDS,Drain-to-Source Voltage,V 10μs μs 1ms 10ms PD,Power Dissipation,W TC,Case Temperature, Figure 1. Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs Case Temperature This Area is Limited by Package Vgs=5.0V~10V Vgs=4.5V ID,Drain Current,A I D,Drain Current[A] Vgs=3.5V Vgs=4.0V Note: 1.250us Pulse Test 2.Tc= TC,Case Temperature, V DS,Drain-to-Source Voltage[V] Figure 3. Maximum Continuous Drain Current vs Case Temperature Figure 4. Typical output Characteristics 1 D=1 0.5 Z θjc,thermal Response[ /W] Single Pulse T, Rectangular Pulse Duration [sec] Figure 5 Maximum Effective Thermal Impedance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of V01
5 Note: 1.V DS=10V 2.250us Pulse Test 120 ID,Drain Current[A] Tj= Tj= V GS,Gate-to-Source Voltage[V] Is,Source Current[A] Is,Source Current[A] Tj= VSD,Source-to-Drain Voltage[V] VSD,Source-to-Drain Voltage[V] Tj=25 Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics RDS(on),Drain-to-Source On Resistance,mΩ VGS = 10V PULSED TEST Tj = 25 RDS(on),(Normalized) Drain-to-Source On Resistance PULSED TEST VGS = 10V I D = A ID,Drain Current,A TJ,Junction Temperature( ) Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature VGS(th),(Normalized) Threshold Voltage VGS = VDS ID = 250μA BVDSS,(Normalized) Drain-to-Source BVDSS,(Normalized) Breakdown Voltage Drain-to-Source Breakdown Voltage TJ,Junction Temperature( ) TJ,Junction Temperature( ) Figure10. Normalized Threshold Voltage vs Junction Temperature Figure 11. Normalized Breakdown Voltage vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of V01
6 Capacitance,pF 00 0 f = 1MHz C iss = C gs +C gd C oss = C ds +C gd C rss = C gd C oss C rss C iss VDS=20V I D =A V DS,Drain-to-Source Voltage,V Qg,Gate Charge[nC] Figure 12. Capacitance Characteristics Figure 13 Typical Gate Charge vs Gate to Source Voltage WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of V01
7 Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching Waveforms WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of V01
8 Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform Figure20.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of V01
9 Package Information: Items Values(mm) MIN MAX A B B C C D E F G H L* N Q *adjustable TO-220AB Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of V01
10 Limit The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% 0.1% 0.1% 0.1% 0.1% Lead Frame Molding Chip Wire Bonding Solder Note :Means the hazardous material is under the criterion of 2011/65/EU. :Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail: HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post: Tel: / Fax: / Application and Service:Post: Tel / Fax: / WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of V01
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800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
N- & annel Enhancement Mode P8NDG TO-- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel V 8mΩ A annel -V 8mΩ -A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 3V N-Channel Trench MOSFET TTG9N3AT APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationEnhancement Mode N-Channel Power MOSFET
OSG60RK2x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More information150V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TMP17N15A 15V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and
More informationN- & P-Channel Enhancement Mode Field Effect Transistor D1 S1 D2
N- & annel Enhancement Mode PNAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel m.a annel - m -A G D S G D S D S D G S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = C Unless Otherwise
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HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationSMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
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SFG170N10xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
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FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationProduct Summery. Applications
General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
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HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP6080AG NCEP6080AG DFN5X6-8L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
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N- & annel Enhancement Mode P2OAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 2V mω.a annel -2V 5mΩ -2.5A G D G D D S D2 5 2 G : GATE D : DRAIN S : SOURCE S S G S2 G2 ABSOLUTE MAXIMUM RATINGS (T
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20V Complementary MOSFET General Features N-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) Typ 20 @ VGS=4.5V 20V 4.5A 25 @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged SOT-23-6L package P-Channel
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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