General Description: Features: Applications:

Transcription

1 General Description: HM2N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 65 V I D 2 A P D (T C =25 ) 85 W R DS(ON)Typ.37 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22F, which accords with the RoHS standard.. Features: Fast Switching Low ON Resistance(Rdson.5Ω) Low Gate Charge (Typical Data:65nC) Low Reverse transfer capacitances(typical: 2pF) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 65 V I D I DM a Continuous Drain Current 2 A Continuous Drain Current T C = C 4 A Pulsed Drain Current 8 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 55 mj a E AR Avalanche Energy,Repetitive 5 mj a I AR Avalanche Current 3.2 A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation 85 W Derating Factor above 25 C.68 W/ T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3 Page of

2 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current V DS = 65V, V GS= V, T a = V DS =52V, V GS= V, T a = 25 I GSS(F) Gate to Source Forward Leakage V GS= 3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. g fs Forward Trans conductance V DS=5V, I D =A S C iss Input Capacitance V GS = V V DS = 25V f =.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance -- 2 Units µa Units Units pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time I D =2A V DD = 325V R G = 25Ω tr Rise Time t d(off) Turn-Off Delay Time -- 8 t f Fall Time -- 9 Q g Total Gate Charge I D =2A V DD =325V V GS = V Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc Page 2 of

3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. Units I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=2A,V GS=V V trr Reverse Recovery Time I S=2A,T j = 25 C ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge µc Pulse width tp 3µs,δ 2% Symbol Parameter Typ. Units R θjc Junction-to-Case.47 /W R θja Junction-to-Ambient /W a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=mH, I D =.5A, Start T J =25 a3 :I SD =2A,di/dt 2A/us,V DD BV DSS, Start T J =25 Page 3 of

4 Characteristics Curve: OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse. Vds, Drain-to-Source Voltage, Volts Figure Maximum Forward Bias Safe Operating Area DC μs μs ms ms Pd, Power Dissipation,Watts Tc, Case Temperature, C Figure 2 Maximum Power Dissipation vs Case Temperature First: 5V 8V 7V 6.5V 6V Sixth: 5.5V First Sixth PULSE TEST Tc = TC, Case Temperature, C Figure 3 Maximum Continuous Drain Current vs Case Temperature Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Thermal Impedance, Normalized.. % 5% Single pulse 2% 5% % 2% Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM*Z thjc*r thjc+t C Page 4 of

5 Idm, Peak Current, Amps V GS=V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I T C Rds(on), Drain to Source ON Resistance, Ohms E-5.E-4.E-3.E-2.E- t Pulse Width, Seconds Figure 6 MaximumPeak Current Capability PULSED TEST VDS=5V Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics PULSED TEST Tc = V GS=V V GS=2V Rds(on), Drain to Source ON Resistance, Ohms Rds(on), Drain to Source ON Resistance, Nomalized Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current VGS=V ID=3.A I D= 8A I D= 9A I D = 4.5A.E+.E+ PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc = Figure 9 Typical Drain to Source ON Resistance vs Drain Current Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature Page 5 of

6 Vgs(th),Threshold Voltage, Nomalized Capacitance, pf Isd, Reverse Drain Current, Amps VGS=V ID=25μA Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd. Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage PULSE V GS=V TEST 5 Crss 25 Ciss Coss Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs, Gate to Source Voltage,Volts Tj, Junction temperature, C Figure 2 Typical Breakdown Voltage vs Junction Temperature VDD=2V ID=8A Tc =25 VDS=2V VDS=3V VDS=48V Qg, Total Gate Charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit VGS=V ID=25μA STARTING Tj = 25 STARTING Tj = Vsd, Source - Drain Voltage, Volts..E-6.E-5.E-4.E-3.E-2.E- tav, Time in Avalanche, Seconds Figure 5 Typical Body Diode Transfer Characteristics Figure 6 Unclamped Inductive Switching Capability Page 6 of

7 Test Circuit and Waveform Page 7 of

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9 Package Information Items Values(mm) MIN MAX A B B C C D E.6. F.3.6 G.2.42 H L N Q TO-22F Package Page 9 of

10 The name and content of poisonous and harmful material in products Part s Name Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE Limit.%.%.%.%.%.% Lead Frame Molding Compound Chip Wire Bonding Solder Note :means the hazardous material is under the criterion of SJ/T :means the hazardous material exceeds the criterion of SJ/T The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by H&M Semiconductor and subject to regular change without notice. Page of