GOFORD C1N60B. Absolute(Tc= 25 unless otherwise specified): Page 1. General Description: Application. Fast Switching

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1 GN6B General Description: The CN6B silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-25, which accords Schematic diagram with the RoHS standard. General Features VDSS (typ) ID 6V 8Ω.A Fast Switching Marking and pin assignment Low ON Resistance(Rdson.5Ω) Low Gate Charge (Typical Data:4.7nC) Low Reverse transfer capacitances(typical:2.9pf) % Single Pulse avalanche energy Test Application Power switch circuit of adaptor and charger. TO-25 Absolute(Tc= 25 unless otherwise specified): Symbol Parameter V DSS Drain-to-Source Voltage 6 V I D I DM a Continuous Drain Current. A Continuous Drain Current T C = C.6 A Pulsed Drain Current 4. A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 2 mj a E AR Avalanche Energy,Repetitive 6 mj a I AR Avalanche Current. A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns Power Dissipation 3 W P D Derating Factor above 25 C.24 W/ T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L MaximumTemperature for Soldering 3 TEL: FAX: Page

2 GN6B Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics V DSS Drain to Source Breakdown Voltage V GS =V, I D =25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ V DS = 6V, V GS = V, T a = I DSS Drain to Source Leakage Current V DS =48V, V GS = V, T a = I GSS(F) Gate to Source Forward Leakage V GS =+3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na ON Characteristics R DS(ON) Drain-to-Source On-Resistance V GS =V,I D =.5A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 38µs,δ 2% Dynamic Characteristics g fs Forward Transconductance V DS =3V, I D =.5A S C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance V GS = V V DS = 25V f =.MHz µa pf Resistive Switching Characteristics t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time I D =.A V DD = 3V V GS = V R G =4.7Ω Q g Total Gate Charge Q gs Gate to Source Charge --.8 Q gd Gate to Drain ( Miller )Charge I D =.A V DD =3V V GS = V ns nc TEL: FAX: Page 2

3 GN6B Source-Drain Diode Characteristics I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S =.A,V GS =V V trr Reverse Recovery Time I S =.A,T j = 25 C ns Qrr Reverse Recovery Charge Pulse width tp 38µs,δ 2% di F /dt=a/us, V GS =V nc Symbol Parameter Typ. RθJC Junction-to-Case 4.7 /W RθJA Junction-to-Ambient 62 /W a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=.mH, I D =2A, Start T J =25 a3 :I SD =.A,di/dt A/us,V DD BV DS, Start T J =25 TEL: FAX: Page 3

4 GN6B Characteristics Curve: 35 Id,Drian current,amps... OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J =5 T C =25 Single Pulse Vds,Drain-to-source Voltage,Volts Figure Maximun Forward Bias Safe Operating Area μs ms ms DC Pd, Power Dissipation,Watts Tc, Case Temperature, C Figure 2 Maximun Power Dissipation vs Case Temperature.6 Id,Drain Source,Volts V GS =9V V GS =V V GS =8V V GS =6V V GS =5V Thermal Impedance,Normanlized F igure Maximum Continuous Drain Current vs Case Tem erature p 5% 2% % % Single pulse 5% 2% Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case Vds,Drain Source Voltage,Volts F igure 4 T Out ut Characteristics ypical p PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM *Z thjc *R thjc +T C TEL: FAX: Page 4

5 GN6B Idm, Peak Current, Amps V GS =V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I T C Id Drain to Source Current,Amps..E E-4.E-3.E-2.E- t Pulse Width, Seconds Figure 6 Maximun Peak Current Capability 4 V DS =25V Rds(on), Drain to Source ON Resistance, Ohms I D =.2A I D =.6A I D =.3A.E+ PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =25.E Vgs,Gate to Source Voltage,Volts 4 Figure 7 Typical Transfer Characteristics Vgs, Gate to Source Voltage, Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 Rds(on),Drain to source ON Resistance. Ohms 3 2 V GS =V Rds(on),Drain to Source ON Resistance,Normalized V GS =V I D =25μA Id,Drain Current,Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current Tj,Junction Temperature,C Figure Typical Drian to Source on Resistance vs Junction Temperature TEL: FAX: Page 5

6 GN6B.2.5 Vgs(th),Threshold Voltage V DS =V GS ID=25μA Breakdown Voltage,Normalized I D =25μA Capacitance,Pf Tj,Junction Temperature,C Figure Typical Theshold Voltage vs Junction Temperature Crss Ciss V GS =V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd Coss Vds,Drain to source Voltage,Volts Figure 3 Typical Capacitance vs Drain to Source Voltage Vgs,gate to Source Voltage, Volts Tj,Junction Temperature,C Figure 2 Typical Breakdown Voltage vs Junction Temperature Qg,Total gate charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage VDS=48V I D =.2A Isd,Reverse Drain Current,Amps Vsd,Source-Drain to source voltages,volts Figure 5 Typical Body Diode Transfer Characteristics Id, Drain Current, Amps...E-6 If R=: t AV =(L* I AS ) / (.38V DSS -V DD ) If R : t AV =(L/R) In[IAS*R/ (.38V DSS -V DD )+] R equals total Series resistance of Drain circuit STARTING Tj = 25 STARTING Tj = 5.E-5.E-4.E-3.E-2.E- tav, Time in Avalanche, Seconds Figure 6 Unclamped Inductive Switching Capability TEL: FAX: Page 6

7 GN6B TestCircuitandWaveform TEL: FAX: Page 7

8 GN6B TEL: FAX: Page 8