HM3N90I. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
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1 General Description: HM3N90I, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 900 V I D 3 A P D (T C =25 ) 75 W R DS(ON)Typ 5 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 5.5Ω) Low Gate Charge (Typical Data:16nC) Low Reverse transfer capacitances(typical:6.5pf) 100% Single Pulse avalanche energy Test Applications: Automotive DC Motor Control and Class D Amplifier. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 900 V I D Continuous Drain Current 3 A Continuous Drain Current T C = 100 C 1.9 A a1 I DM Pulsed Drain Current 12 A V GS Gate-to-Source Voltage ±30 V a2 E AS Single Pulse Avalanche Energy 125 mj a1 E AR Avalanche Energy,Repetitive 12 mj a1 I AR Avalanche Current 1.5 A dv/dt a3 Peak Diode Recovery dv/dt 5.0 V/ns P D Power Dissipation 75 W Derating Factor above 25 C 0.6 W/ T J,T stg Operating Junction and Storage Temperature Range 150, 55 to 150 T L MaximumTemperature for Soldering 300
2 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=250uA,Reference V/ V DS = 900V, V GS = 0V, T a = I DSS Drain to Source Leakage Current V DS =720V, V GS = 0V, T a = I GSS(F) Gate to Source Forward Leakage V GS =+30V na I GSS(R) Gate to Source Reverse Leakage V GS =-30V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS =10V,I D =1.5A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 250µA V Pulse width tp 380µs,δ 2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. g fs Forward Transconductance V DS =15V, I D =3A S C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance V GS = 0V V DS = 25V f = 1.0MHz Units µa Units Units pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time I D =3A V DD = 450V V GS = 10V R G =25Ω Q g Total Gate Charge Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge I D =3A V DD =450V V GS = 10V Units ns nc
3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S =3A,V GS =0V V trr Reverse Recovery Time I S =3A,T j = 25 C ns Qrr Reverse Recovery Charge Pulse width tp 380µs,δ 2% Units di F /dt=100a/us, V GS =0V µc Symbol Parameter Typ. Units RθJC Junction-to-Case 1.67 /W RθJA Junction-to-Ambient 62 /W a1 :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=10.0mH, I D =4.9A, Start T J =25 a3 :I SD =3A,di/dt 100A/us,V DD BV DS, Start T J =25
4 Characteristics Curve: 80 PD, Power Dissipation,Watts TC, Case Temperature, C
5
6
7 TestCircuitandWaveform
8
9 Package Information: Items MIN Values(mm) MAX A B C C D E F G H L M N TO-251 Package
10 The name and content of poisonous and harmful material in products Hazardous Substance Part s Name Pb Hg Cd Cr(VI) PBB PBDE Limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% Lead Frame Molding Compound Chip Wire Bonding Solder :means the hazardous material is under the criterion of SJ/T Note :means the hazardous material exceeds the criterion of SJ/T The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. This publication is made by H&M Semiconductor and subject to regular change without notice. :
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