CS730F A9RD. Silicon N-Channel Power MOSFET. General Description: Features: Applications:
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1 Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance V DSS 4 V I D 6 A P D (T C =25 ) 3 W R DS(ON)Typ.75 Ω and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22AB, which accords with the RoHS standard. Features: Fast Switching ESD Improved Capability Low Gate Charge (Typical Data:4.5nC) Low Reverse transfer capacitances(typical:7.5pf) % Single Pulse avalanche energy Test Applications: Power switch circuit of electron ballast and adaptor. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter V DSS Drain-to-Source Voltage 4 V I D I DM a Continuous Drain Current 6 A Continuous Drain Current T C = C 4.2 A Pulsed Drain Current 24 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 2 mj a E AR Avalanche Energy,Repetitive 26 mj a I AR Avalanche Current 2.3 A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation 3 W Derating Factor above 25 C.24 W/ V ESD(G-S) Gate source ESD (HBM-C= pf, R=.5kΩ) 3 V T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 25V
2 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics Min. V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current V DS = 4V, V GS= V, Typ. Max. T a = V DS =32V, V GS= V, T a = 25 I GSS(F) Gate to Source Forward Leakage V DS =V, V GS= 2V µa I GSS(R) Gate to Source Reverse Leakage V DS =V, V GS =-2V µa ON Characteristics Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=3.A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics Min. Typ. Max. g fs Forward Trans conductance V DS=5 I D =3.A S C iss Input Capacitance V GS = V V DS = 25V f =.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance µa pf Resistive Switching Characteristics Min. Typ. Max. t d(on) Turn-on Delay Time I D =6.A V DD = 2V R G = 9.Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =6.A V DD =2V V GS = V Q gs Gate to Source Charge -- 3 Q gd Gate to Drain ( Miller )Charge ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 25V
3 Source-Drain Diode Characteristics Min. Typ. Max. I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=6A,V GS=V V trr Reverse Recovery Time I S=6A,T j = 25 C ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge nc Pulse width tp 3µs,δ 2% Symbol Parameter Typ. RθJC Junction-to-Case 4.7 /W RθJA Junction-to-Ambient /W Gate-source Zener diode Min. Typ. Max. V GSO Gate-source breakdown voltage I GS= ±ma(open Drain) 3 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components. a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=.mH, I D =6.3A,art T J =25 a3 :I SD =6A,di/dt A/us,V DD BV DS, Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 25V
4 Characteristics Curve: 4 Id, Drain Current, Amps. OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse μs m s ms DC PD, Power Dissipation,Watts 3 2 Id, Drain Current, Amps Thermal Impedance, Normalized. Vds, Drain-to-Source Voltage, Volts Figure Maximum Forward Bias Safe Operating Area Tc,Case Temperature,C Figure 3 Maximum Continuous Drain Current vs Case Temperature....E-5 5% 2% % 5% Single pulse 2% %.E-4.E-3.E-2.E- Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 25V Id, Drain Current, Amps TC, Case Temperature, C Figure 2 Maximum Power Dissipation vs Case Temperature First: V 9V 8V 7V 6V 5V Seventh:4V First Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM*Z thjc*r thjc+t C.E+ Seventh PULSE TEST Tc = 25.E+
5 Id, Drain Current,Amps Idm, Peak Current, Amps Rds(on), Drain to Source ON Resistance, Ohms..E V GS=V PULSED TEST VDS=V.E-4.E-3.E-2.E- t Pulse Width, Seconds Figure 6 Maximum Peak Current Capability Vgs, Gate to Source Voltage,volts Figure 7 Typical Transfer Characteristics PULSED TEST Tc =25 figure TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION V GS=V V GS=2V Rds(on), Drain to Source ON Resistance, Ohms Rds(on), Drain to Source ON Resistance, Nomalized Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I 25 VGS=V ID=3.A 5 25 T C I D=6A I D=3A I D=.5A.E+ PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =25.E Id, Drain Current,Amps Figure 9 Typical Drain to Source ON Resistance vs Drain Current Tj, Junction temperature,c Figure Typical Drian to Source on Resistance vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 25V
6 Vgs(th),Threshold Voltage, Nomalized VGS=V ID=25μA Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature Bvdss,Drain to Source Breakdown Voltage, Normalized.2..9 VGS=V ID=25μA Tj, Junction temperature,c Figure 2 Typical Breakdown Voltage vs Junction Temperature Capacitance, pf Isd, Reverse Drain Current, Amps. Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage. V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd PULSE V GS=V TEST 5 25 Ciss Coss Crss Vsd, Source - Drain Voltage, Volts Figure 5 Typical Body Diode Transfer Characteristics Vgs, Gate to Source Voltage,Volts Id, Drain Current, Amps VDD=2V ID=6A Tc = Qg, Total Gate Charge, nc Figure 4 Typical Gate Charge vs Gate to Source Voltage STARTING Tj = 25 STARTING Tj = 5 If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit..e-6.e-5.e-4.e-3.e-2.e-.e+ tav,time in Avalanche,Seconds Figure 6 Unclamped Inductive Switching Capability WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 25V
7 Test Circuit and Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 25V
8 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 25V
9 Package Information Items Values(mm) MIN MAX A B B C C D E.6. F.3.6 G.2.42 H L N Q TO-22F Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 25V
10 The name and content of poisonous and harmful material in products Hazardous Substance Part s Name Pb Hg Cd Cr(VI) PBB PBDE Limit.%.%.%.%.%.% Lead Frame Molding Compound Chip Wire Bonding Solder Note :means the hazardous material is under the criterion of SJ/T :means the hazardous material exceeds the criterion of SJ/T The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.4 Liangxi RD. Wuxi, Jiangsu, China Mail:246 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:246 Tel: / Fax: / sales@hj.crmicro.com Application and Service:Post:246 Tel / Fax: /885 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 25V
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More informationHGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested. TO-262F Bottom View. Top View G D S S G. Symbol
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More informationT C =25 unless otherwise specified
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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