Silicon N-Channel Power MOSFET CS5N50F A9R-G

Transcription

1 Silicon N-Channel Power MOSFET CS5N5F A9R-G General Description: CS5N5F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 5 V I D 5 A P D (T C =25 ) 3 W R DS(ON)Typ 1.3 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22F, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 1.5Ω) Low Gate Charge (Typical Data: 12.6nC) Low Reverse transfer capacitances(typical:4pf) 1% Single Pulse avalanche energy Test Halogen Free Applications: Power switch circuit of adaptor and charger. Absolute(T J = 25 unless otherwise specified): Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 5 V I D I DM a1 Continuous Drain Current T C = 25 C 5 A Continuous Drain Current T C = 1 C 3.1 A Pulsed Drain Current T C = 25 C 2 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 25 mj dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation T C = 25 C 3 W Derating Factor above 25 C.24 W/ T J,T stg Operating Junction and Storage Temperature Range 15, 55 to 15 T L Maximum Temperature for Soldering 3 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 1 218V1

2 Electrical Characteristics(T J = 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference V/ I DSS Drain to Source Leakage Current Unit V DS =5V, V GS= V, T J = µa V DS =4V, V GS= V, T J = µa I GSS(F) Gate to Source Forward Leakage V GS =+3V na I GSS(R) Gate to Source Reverse Leakage V GS =-3V na ON Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance V GS=1V,I D=2.5A Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA V Pulse width tp 3µs,δ 2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. g fs Forward Trans conductance V DS=15V, I D =2.5A S C iss Input Capacitance V GS = V V DS = 25V f = 1.MHz C oss Output Capacitance C rss Reverse Transfer Capacitance s Units Units pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time I D =5A V DD = 25V R G =1Ω tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =5A V DD =4V V GS = 1V Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 1 218V1

3 Source-Drain Diode Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. I S Continuous Source Current (Body Diode) T C = 25 C A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=5.A,V GS=V V trr Reverse Recovery Time I S=5.A,T j = 25 di F/dt=1A/us, V GS=V ns Qrr Reverse Recovery Charge nc I RRM Reverse Recovery Current A Pulse width tp 3µs,δ 2% Symbol Parameter Max. Units RθJC Junction-to-Case 4.17 /W RθJA Junction-to-Ambient 62.5 /W a1 :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=1mH, I D =7.1A, Start T J =25 a3 :I SD =5A,di/dt 1A/us,V DD BV DS, Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 1 218V1

4 Characteristics Curve: 1 4 Id, Drain Current, Amps OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse DC 1us 1ms 1ms PD, Power Dissipation,Watts Vds, Drain-to-Source Voltage, Volts Figure 1 Maximum Forward Bias Safe Operating Area TC, Case Temperature, C Figure 2 Maximum Power Dissipation vs Case Temperature 1 25us Pluse Test Tc = 25 Id, Drain Current, Amps Id, Drain Current, Amps V GS=1V V GS=5.5V V GS=6V V GS=5V V GS=4.5V TC, Case Temperature, C Figure 3 Maximum Continuous Drain Current vs Case Temperature Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Figure 5 Maximum Effective Thermal Impedance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 1 218V1

5 12 8 Id, Drain Current, Amps us Pulse Test V DS=2V Isd, Reverse Drain Current, Amps Vgs, Gate to Source Voltage, Volts Figure 6 Typical Transfer Characteristics Vsd, Source - Drain Voltage, Volts Figure 7 Typical Body Diode Transfer Characteristics Rds(on), Drain to Source ON Resistance, Ohms PULSE DURATION = 1μs DUTY CYCLE=.5%MAX Tc =25 V GS=1V Id, Drain Current, Amps Rds(on), Drain to Source ON Resistance, Nomalized PULSE DURATION = 1μs DUTY CYCLE=.5%MAX VGS=1V ID=2.5A Tj, Junction temperature, C Figure 8 Typical Drain to Source ON Resistance vs Drain Current Figure 9 Typical Drian to Source on Resistance vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 1 218V1

6 Vgs(th),Threshold Voltage, Nomalized VGS=V ID=25μA Tj, Junction temperature, C Figure 1 Typical Theshold Voltage vs Junction Temperature Bvdss,Drain to Source Breakdown Voltage, Normalized VGS=V ID=25μA Tj, Junction temperature, C Figure 11 Typical Breakdown Voltage vs Junction Temperature 12 Vgs, Gate to Source Voltage,Volts VDS=4V I D=5A Qg, Total Gate Charge, nc Figure 12 Typical Capacitance vs Drain to Source Voltage Figure 13 Typical Gate Charge vs Gate to Source Voltage WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 1 218V1

7 Test Circuit and Waveform: Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching Waveforms WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 1 218V1

8 Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform Figure2.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 1 218V1

9 Package Information: A D C ΦP L B1 B Q H G C1 E F N N Items Values(mm) MIN MAX A B B C C D E.6 1. F.3.6 G H L* N Q *adjustable TO-22F Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 1 218V1

10 The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit.1%.1%.1%.1%.1%.1%.1%.1%.1%.1% Lead Frame Molding Chip Wire Bonding Solder :Means the hazardous material is under the criterion of 211/65/EU. Note :Means the hazardous material exceeds the criterion of 211/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 8 percent of the maximum ratings of the device. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:21461 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:21461 Tel: / Fax: / Application and Service:Post:21461 Tel / Fax: / WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 1 218V1