Enhancement Mode N-Channel Power MOSFET
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1 SFG170N10xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors
2 General Description SFG170N10xF use advanced SFGMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in motor control applications. V DS, min, pulse R DS(ON), VGS=10 V Q g V 510 A 3 mω nc Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT TOP VIEW TO220 SFG170N10PF TO263 SFG170N10KF Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS V Gate source voltage V GS ±20 V Continuous drain current 1) 170 A Pulsed drain current 2), pulse 510 A Power dissipation 3) P D 340 W Single pulsed avalanche energy 4) E AS 540 mj Operation and storage temperature T stg,t j -55 to 150 Oriental Semiconductor Copyright reserved / 10
3 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case R θjc 0.37 /W Thermal resistance, junction-ambient 5) R θja 62 /W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition Drain-source breakdown voltage BV DSS V V GS=0 V, =250 μa Gate threshold voltage V GS(th) V V DS=V GS, =250 μa Drain-source on-state resistance R DS(ON) mω V GS=10 V, =30 A Gate-source leakage current I GSS V GS=20 V na - V GS=-20 V Drain-source leakage current SS 1 μa V DS= V, V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss pf Output capacitance C oss pf Reverse transfer capacitance C rss 24.6 pf Turn-on delay time t d(on) 43.7 ns Rise time t r 19.7 ns Turn-off delay time t d(off) ns Fall time t f 22.5 ns V GS=0 V, V DS=50 V, ƒ= khz V GS=10 V, V DS=50 V, R G=2 Ω, =20 A Oriental Semiconductor Copyright reserved / 10
4 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g nc Gate-source charge Q gs 34.8 nc Gate-drain charge Q gd 23.2 nc Gate plateau voltage V plateau 4.6 V =20 A, V DS=50 V, V GS=10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 170 Pulsed source current I SP 510 A V GS<V th Diode forward voltage V SD 1.3 V I S=30 A, V GS=0 V Reverse recovery time t rr 105 ns Reverse recovery charge Q rr nc Peak reverse recovery current I rrm 6.6 A I S=20 A, di/dt= A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) V DD=50 V, R G=50 Ω, L=0.3 mh, starting T j=25. 5) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25. Oriental Semiconductor Copyright reserved / 10
5 Electrical Characteristics Diagrams T j = 25 V DS = 10 V, Drain current (A) V 6.5 V 6 V 5.5 V, Drain current(a) 10 T j = V GS = 5 V V DS, Drain-source voltage (V) V GS, Gate-source voltage(v) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 10 5 f = khz 10.0 = 20 A C, Capacitance (pf) V GS = 0 V C iss C oss V GS, Gate-source voltage(v) V DS = 50 V C rss V DS, Drain-source voltage (V) Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge m BV DSS, Drain-source breakdown voltage (V) = 250 μa V GS = 0 V R DS(ON), On-resistance(Ω) 5.0m 4.0m 3.0m 2.0m 1.0m = 30 A V GS = 10 V T j, Junction temperature ( ) T j, Junction Temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright reserved / 10
6 T j = m I S, Source current (A) 10 1 R DS(ON), On-resistance(Ω) 30.0m 20.0m 10.0m V GS =5 V 5.5 V 6 V V SD, Source-Drain voltage (V) , Drain current(a) 10 V Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance 180 0, Drain current (A) , Drain current(a) 10 1 R DS(ON) Limited 10 μs μs 1 ms 10 ms DC T C, Case Temperature ( ) V DS, Drain-source voltage(v) Figure 9, Drain current Figure 10, Safe operation area T C=25 Oriental Semiconductor Copyright reserved / 10
7 Test circuits and waveforms Figure 1, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved / 10
8 Package Information Figure1, TO220 package outline dimension SYMBOL mm MIN NOM MAX A A A b b c D D D E E e e1 H BSC 5.08 BSC L L ΦP Q Oriental Semiconductor Copyright reserved / 10
9 Package Information Figure2, TO263 package outline dimension SYMBOL mm MIN NOM MAX A A A A b b c D D E E e H BSC H L L L BSC Oriental Semiconductor Copyright reserved / 10
10 Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO Package Units/Reel Reels/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO Product Information Product Package Pb Free RoHS Halogen Free SGF170N10PF TO220 yes yes yes SGF170N10KF TO263 yes yes yes Oriental Semiconductor Copyright reserved / 10
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