Enhancement Mode N-Channel Power MOSFET

Transcription

1 _Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Easy to drive Applications PC power Server power supply Telecom Solar invertor Super charger for automobiles

2 General Description uses advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device offers extremely fast and robust body diode, and is suitable for telecom and super charger applications., min@tjmax, pulse R DS(ON), VGS=10 V Q g 700 V 12 A 1.5 Ω 6.5 nc Schematic and Package Information Schematic Diagram Pin Assignment-Top View TO220 Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage 650 V Gate source voltage ±30 V Continuous drain current 1), T C=25 Continuous drain current 1), T C= A Pulsed drain current 2), T C=25, pulse 12 A Power dissipation 3), T C=25 P D 28.4 W Single pulsed avalanche energy 5) E AS 40 mj MOSFET dv/dt ruggedness, =0 480 V dv/dt 50 V/ns Reverse diode dv/dt, =0 480 V, I SD dv/dt 50 V/ns Operation and storage temperature T stg,t j -55 to 150 Oriental Semiconductor Copyright 2 / 9

3 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case R θjc 4.4 /W Thermal resistance, junction-ambient 4) R θja 62.5 /W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition 650 =0 V, =250 μa Drain-source breakdown voltage BS V =0 V, =250 μa, T j=150 Gate threshold voltage (th) V =, =250 μa =10 V, =2 A Drain-source on-state resistance R DS(ON) 3.4 Ω =10 V, =2 A, T j=150 Gate-source leakage current I GSS 100 =30 V na -100 =-30 V Drain-source leakage current SS 10 μa =650 V, =0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss pf Output capacitance C oss 23.5 pf Reverse transfer capacitance C rss 2.5 pf Turn-on delay time t d(on) 42.1 ns Rise time t r 27.5 ns Turn-off delay time t d(off) 42.3 ns Fall time t f 8.6 ns =0 V, =50 V, ƒ=1 MHz =10 V, =400 V, R G=2 Ω, =2 A Oriental Semiconductor Copyright 3 / 9

4 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 6.5 nc Gate-source charge Q gs 2.1 nc Gate-drain charge Q gd 3.0 nc Gate plateau voltage V plateau 7.8 V =2 A, =400 V, =10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 4 Pulsed source current I SP 12 A <V th Diode forward voltage V SD 1.3 V I S=4 A, =0 V Reverse recovery time t rr 61.6 ns Reverse recovery charge Q rr 0.2 nc Peak reverse recovery current I rrm 5.3 A V R=400 V, I S=2 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating, pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25. 5) V DD=100 V, R G=50 Ω, L=60 mh, starting T j=25. Oriental Semiconductor Copyright 4 / 9

5 Electrical Characteristics Diagrams, Drain current (A) T j = V 8 V 7 V = 5.5 V 6 V , Drain-source voltage (V), Drain current(a) = 10 V T j = , Gate-source voltage(v) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics C, Capacitance (pf) f = 1 MHz = 0 V C iss C oss C rss, Gate-source voltage(v) = 2 A = 400 V , Drain-source voltage (V) Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge BS, Drain-source breakdown voltage (V) = 250 μa = 0 V T j, Junction Temperature ( ) R DS(ON), On-resistance( ) = 2 A = 10 V T j, Junction Temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright 5 / 9

6 T j = I S, Source current (A) 10 1 R DS(ON), On-resistance( ) =8 V =10 V V SD, Source-Drain voltage (V) , Drain current(a) Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance , Drain current (A) , Drain current(a) R DS(ON) Limited 10 μs 100 μs 1 ms 10 ms DC T C, Case Temperature ( ) , Drain-source voltage(v) Figure 9, Drain current Figure 10, Safe operation area for T C=25 Oriental Semiconductor Copyright 6 / 9

7 Test circuits and waveforms Figure 1, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright 7 / 9

8 Package Information Figure1, TO252 package outline dimension SYMBOL mm MIN NOM MAX A A A b b c D D1 E REF E e H BSC L2 L BSC L θ 0-8 Oriental Semiconductor Copyright 8 / 9

9 Ordering Information Package Units/Reel Reels/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO Product Information Product Package Pb Free RoHS Halogen Free TO252 yes yes yes Oriental Semiconductor Copyright 9 / 9