Enhancement Mode N-Channel Power MOSFET
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1 OSG65R580x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer electronics power supply LCD/LED/PDP Portable digital power management PFC Charger
2 General Description OSG65R580x series use advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS@Tjmax 700V I D 8A R DS(ON),max@V GS=V 0.58Ω TO-251,TO-252,TO-220F Package Information Schematic Diagram Pin Assignment-Top View TO-251 TO-252 TO-220F OSG65R580A OSG65R580D OSG65R580F Absolute Maximum Ratings(TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 650 V Gate-Source Voltage V GS ±30 V Drain Current-Continuous (Note 1) I D 8 A Drain Current- Pulsed (Note 2) I DM 24 A Power Dissipation (Note 3) for TO-251,TO-252 Power Dissipation (Note 3) for TO-220F 39 P D 83 W Single Pulsed-Avalanche Energy (Note 6) E AS 150 mj Operation and Storage Junction Temperature T STG,T J -55 to 150 Oriental Semiconductor Copyright reserved / 11
3 Thermal Characteristics Parameter Symbol Value TO251/TO252 TO220F Unit Thermal Resistance, Junction-to-Case R θjc C/W Thermal Resistance, Junction-to-Ambient (Note 4) R θja C/W Electrical Characteristics(TA=25 unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition 650 V GS=0V, I D=250μA Drain-Source Breakdown Voltage BV DSS V V GS=0V,I D=250μA, T j=150 Gate Threshold Voltage V GS(th) V V DS=V GS, I D=250μA V GS=V,I D=4A Drain-Source On-state Resistance R DS(ON) 1.27 Ω V GS=V,I D=4A, T j=150 Gate-Source Leakage Current I GSS 0 V GS=30V na -0 V GS=-30V Drain-to-Source leakage current I DSS 1 μa V DS=650V,V GS=0V Dynamic Characteristics Input Capacitance C iss 464 pf Output Capacitance C oss 38.3 pf Reverse Transfer Capacitance C rss 1.47 pf Turn-on Delay Time t d(on) 18 ns Turn-on Rise Time t r 18 ns Turn-Off Delay Time t d(off) 27 ns Turn-Off Fall Time t f 22 ns V GS = 0V, V DS=50V, ƒ=1mhz V GS=V, V DS=380V, R G=25Ω I D=8A Oriental Semiconductor Copyright reserved / 11
4 Gate Charge Characteristics Total Gate Charge Q g 9.5 nc Gate-Source Charge Q gs 2.7 nc Gate-Drain Charge Q gd 3.8 nc I D=8A, V DS=480V, V GS=V Body Diode Characteristics Body-diode Forward Current (NOTE 2) I S 8 Pulsed Source Current I SP 24 A V GS<V th Inverse Diode Forward Voltage V SD 1.3 V I S=8A, V GS=0V Reverse Recovery Time t rr 211 ns I S=8A, V GS=0V Reverse Recovery Charge Q rr 1.8 μc di/dt =0A/μs Oriental Semiconductor Copyright reserved / 11
5 Typical Electrical and Thermal Characteristics V 8V 12 I D, Drain-to-Source Current (A) V 5.5V V GS = 5V Id,Drain Current(A) o C 25 o C V DS, Drain-to-Source Voltage (V) 000 Figure 1. Typ. Output Characteristics V GS,Gate to Source Voltage(V) Figure 2. Transfer Characteristics C, Capacitance(pF) C iss C oss C rss V GS,Gate to Source Voltage(V) V DS, Drain-to-Source Voltage (V) Figure 3. Typ. Capacitance Q g,gate charge(nc) Figure 4. Gate Charge V (BR)DSS, Drain-to-Source Breakdown Voltage (V) T J, Temperature ( O C ) R DS(on), Drain-source on-state resistance( ) T J,Juntion Temperature( o C) Figure 5. Drain-source breakdown voltage Figure 6. Drain-source on-resistance Oriental Semiconductor Copyright reserved / 11
6 0 1.2 Is,Reverse Drain Current(A) 1 0 o C 25 o C R DS(ON),On-Resistance( ) V GS =7V V GS =V V SD, Source to Drain Voltage(V) I D,Drain Current(A) Figure 7. I S-V SD Figure 8. R DS(ON)-I D 0 0 I D,Drain Current(A) R DS(ON) Limited s 0 s 1ms ms DC I D,Drain Current(A) R DS(ON) Limited s 0 s 1ms ms DC V DS,Drain to Source Voltage(V) V DS,Drain to Source Voltage(V) Figure 9. Safe Operation Area for TO251/TO252 Figure. Safe Operation Area for TO220F Oriental Semiconductor Copyright reserved / 11
7 Test circuits and waveforms Figure 1: Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Figure 4: Diode Recovery Test Circuit & Waveforms Oriental Semiconductor Copyright reserved / 11
8 Package Information Figure1 TO-251 PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max A A b b b2' b c D D REF 0.209REF E E e 2.286BSC 0.090BSC H L L L Oriental Semiconductor Copyright reserved / 11
9 Package Information Figure2 TO-252 PACKAGE OUTLINE DIMENSION Oriental Semiconductor Copyright reserved / 11
10 Package Information Figure3 TO220F PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max E E E A A A A A5 c REF BSC D Q H1 e ФP L REF 6.70REF 2.54REF 3.18REF REF 0.264REF 0.0REF 0.125REF L L ФP ФP ФP ϴ1 3 o 5 o 7 o 3 o 5 o 7 o ϴ2-45 o o - DEP F F F F G G G b b K R - 0.5REF REF - Oriental Semiconductor Copyright reserved 2015 / 11
11 Ordering Information Package Units/Tape Tapes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO TO252 Option TO252 Option TO220F Note 1. Calculated continuous current based on maximum allowable junction temperature. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. PD is based on max. junction temperature, using junction-to-case thermal resistance. 4. The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. 5. Declared by design, not subject to production. 6. V DD=50V, R G=25Ω, L=.8mH, Starting T J=25 C. Oriental Semiconductor Copyright reserved / 11
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More informationTO-252 (DPAK) Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V -10V 1-30 I DM Pulsed Drain Current 2-120
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More informationHGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS
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