T C =25 75 T C = Symbol Parameter/Test Conditions Values Unit

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1 MMGTUSB6C IGBT Module February ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery PPLICTIONS C motor control Motion/servo control Inverter and power supplies GS Series Module BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues CES Collector Emitter oltage T J = GES I C Gate Emitter oltage ± DC Collector Current T C = 7 T C =8 I CM Repetitive Peak Collector Current tp=ms P tot Power Dissipation Per IGBT W BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues RRM Repetitive Reverse oltage T J = I F() verage Forward Current T C = I FRM Repetitive Peak Forward Current tp=ms I t, t=ms, R = 7 S MacMic Science & Technology Co., Ltd. dd:#8, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.: Fax: Post Code: Website:

2 MMGTUSB6C ELECTRICL CHRCTERISTICS CE(sat) I CES C ies t d(on) t r t d(off) t f E on E off I SC Collector Emitter Saturation oltage Collector Leakage Current Turn on Delay Time Rise Time Turn off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit Current CE =, GE =, T J = CE =, GE =, CC =6,I C = R G =Ω, GE =±, CC =6,I C = R G =Ω, GE =±, CC =6,I C = R G =Ω, GE =±, tpsc µs, GE =, CC =6 T J = 6 T J = T J = T J = Symbol Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =m I C =, GE =, T J =.. I C =, GE =,. I GES Gate Leakage Current CE =, GE =±, - R gint Integrated Gate Resistor Q g Gate Charge CE =6, I C =, GE =.8 Input Capacitance 7. CE =, GE =, f =MHz C res Reverse Trafer Capacitance 8 6 T J =. T J =.8. µ m n Ω µc nf pf R thjc Junction to Case Thermal Resistance ( Per IGBT). K /W ELECTRICL CHRCTERISTICS F Forward oltage Symbol Parameter/Test Conditio Min. Typ. Max. I F =, GE =, T J =.6. I F =, GE =,.6 t rr Reverse Recovery Time I F =, R =6 I RRM Max. Reverse Recovery Current di F /dt=-8/μs Q RR Reverse Recovery Charge. E rec Reverse Recovery Energy. R thjcd Junction to Case Thermal Resistance ( Per Diode). µc K /W

3 E on E off () MMGTUSB6C MODULE CHRCTERISTICS isol Isolation Breakdown oltage C, Hz(R.M.S), t=minute CTI Comparative Tracking Index > Torque Symbol Parameter/Test Conditio alues T Jmax Max. Junction Temperature T Jop Operating Temperature -~ T stg Storage Temperature -~ to heatsink Recommended(M6) ~ to terminal Recommended(M).~ Weight 6 Nm Nm g 8 8 ge=7 ge= ge= 6 6 ge= ge=8 CE () CE () Figure. Typical Output Characteristics Figure. Typical Output Characteristics 8 6 CE = 8 6 CE =6 I C = GE =± Eon Eoff GE () Rg(Ω) Figure. Typical Trafer characteristics Figure. Switching Energy vs Gate Resistor

4 I F () E REC () I F () E on E off () MMGTUSB6C 9 6 CE =6 R g =Ω GE =± Eon Eoff 8 6 R g =Ω GE =± CE () Figure. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating rea 7 DC DC 7 T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter 7 T C ( ) Figure 8. Forward current vs Case temperature CE =6 I F = F () Rg(Ω) Figure 9. Diode Forward Characteristics Figure. Switching Energy vs Gate Resistor

5 E REC () Z thjc (K/W) MMGTUSB6C CE =6 R g =Ω.. IGBT DIODE I F ().... Rectangular Pulse Duration (s) Figure. Switching Energy vs Forward Current Figure. Traient Thermal Impedance of Diode and Figure. Circuit Diagram Dimeio in (mm) Figure. Package Outline

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