TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)
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1 TYPICAL PERFORMANCE CURVES 6V APT2GN6J APT2GN6J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive (ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses 6V Field Stop Trench Gate: Low (on) Easy Paralleling 5µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability 175 C Rated Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor G E C ISOTOP G E SOT-227 "UL Recognized" file # E C E MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Parameter APT2GN6J S Collector-Emitter Voltage Gate-Emitter Voltage 6 ±2 Volts 1 Continuous Collector T C Continuous Collector T C = 11 C 158 Amps M Pulsed Collector Current 1 6 SSOA Switching Safe Operating = 175 C P D Total Power Dissipation 682 Watts,T STG Operating and Storage Junction Temperature Range -55 to 175 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN TYP MAX V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = 4mA) 6 (TH) Gate Threshold Voltage ( =, = 3.2mA, T j ) Collector-Emitter On Voltage (, = 2A, T j ) Collector-Emitter On Voltage (, = 2A, T j ) Volts (ON) Collector-Emitter On Voltage (, = 1A, T j ) 1.15 Collector-Emitter On Voltage (, = 1A, T j ) 1.19 ES I GES INT Collector Cut-off Current ( = 6V, = V, T j ) 2 25 Collector Cut-off Current ( = 6V, = V, T j ) 2 TBD Gate-Emitter Leakage Current ( = ±2V) 6 Intergrated Gate Resistor 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - µa na Ω Rev B 11-25
2 DYNAMIC CHARACTERISTICS APT2GN6J Characteristic Test Conditions MIN TYP MAX C ies C oes C res P Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Capacitance = V, = 25V f = 1 MHz Gate Charge = 3V = 1A pf V nc SSOA Switching Safe Operating Area = 175 C, = 1.Ω 7, = 15V, L = 1µH, = 6V 6 A SCSOA Short Circuit Safe Operating Area V CC = 36V,, = 15 C, = 1.Ω 7 5 µs t d(on) t r t d(off) t f E on1 E on2 E off t d(on) t r t d(off) t f E on1 E on2 E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 Inductive Switching (25 C) V CC = 4V = 2A = 1.Ω 7 = +25 C Inductive Switching (125 C) V CC =4V = 2A = 1.Ω 7 = +125 C ns mj ns mj THERMAL AND MECHANICAL CHARACTERISTICS Characteristic MIN TYP MAX R θjc R θjc Junction to Case (IGBT) Junction to Case (DIODE).22 N/A C/W V Isolation RMS Voltage (5-6Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.) 25 Volts Rev B W T Torque Package Weight Maximum Terminal & Mounting Torque 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-75 Method E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 is external gate resistance, not including (int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein oz gm Ib in N m
3 TYPICAL PERFORMANCE CURVES V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V) (NORMALIZED) , COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) µs PULSE TEST<.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) = -55 C = 175 C FIGURE 1, Output Characteristics( ) = 175 C = -55 C FIGURE 3, Transfer Characteristics = 3A = 15A. 25µs PULSE TEST <.5 % DUTY CYCLE = 75A, DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V) APT2GN6J , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature FIGURE 2, Output Characteristics ( ) 5 15V = 2A FIGURE 4, Gate Charge 7.5V 7V. 25µs PULSE TEST <.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature 13V 12V 9V = 12V = 3V = 3A 8.5V = 15A 8V = 48V = 75A Rev B 11-25
4 6 8 APT2GN6J Rev B SWITCHING ENERGY LOSSES (µj) E ON2, TURN ON ENERGY LOSS (µj) t r, RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) E FIGURE 9, Turn-On Delay Time vs Collector Current = 4V, or 125 C = 1.Ω L = 1µH E FIGURE 11, Current Rise Time vs Collector Current 35, 3, 25, 2, 15, 1, 5, E FIGURE 13, Turn-On Energy Loss vs Collector Current 7, 6, 5, 4, 3, 2, 1,, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µj) E OFF, TURN OFF ENERGY LOSS (µj) t f, FALL TIME (ns) t d (OFF), TURN-OFF DELAY TIME (ns) =15V, =125 C = 4V = 1.Ω L = 1µH =15V, =25 C = 1.Ω, L = 1µH, = 4V E FIGURE 1, Turn-Off Delay Time vs Collector Current E FIGURE 12, Current Fall Time vs Collector Current 25, 2, 15, 1, 5, E FIGURE 14, Turn Off Energy Loss vs Collector Current 35, 3, 25, 2, 15, 1, 5, = 4V = 1.Ω,, = 4V = 1.Ω = 1.Ω, L = 1µH, = 4V = 4V 3A = 25 or 125 C, 1A 3A 2A 2A 1A = 4V = 1.Ω 3A 2A 1A 3A 2A 1A , JUNCTION TEMPERATURE ( C) FIGURE 16, Switching Energy Losses vs Junction Temperature
5 TYPICAL PERFORMANCE CURVES 2, 7 APT2GN6J C, CAPACITANCE ( P F) 1, C ies C es C res , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area.25 Z θjc, THERMAL IMPEDANCE ( C/W) D = t 2.1 SINGLE PULSE Duty Factor D = t1 /t 2.5 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t 1 6 Junction temp. ( C) Power (watts) Case temperature. ( C) RC MODEL FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Rev B F MAX, OPERATING FREQUENCY (khz) 1 T C = 75 C D = 5 % = 4V = 1.Ω Figure 2, Operating Frequency vs Collector Current F max = min (f max, f max2 ).5 f max1 = td(on) + t r + t d(off) + t f f max2 = P diss = P diss - P cond E on2 + E off - T C R θjc
6 APT2GN6J APT1DQ6 1% Gate Voltage t d(on) V CC t r 9% Collector Current D.U.T. A 5% Switching Energy 1% 5% Collector Voltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 9% Gate Voltage t d(off) Collector Current Collector Voltage t f Switching Energy 9% 1% Figure 23, Turn-off Switching Waveforms and Definitions SOT-227 (ISOTOP ) Package Outline 31.5 (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M4 (4 places).75 (.3).85 (.33) 12.6 (.496) 12.8 (.54) 25.2 (.992) 25.4 (1.) Rev B (.587) 15.1 (.594) 3.1 (1.185) 3.3 (1.193) 38. (1.496) 38.2 (1.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) * Emitter Collector * Emitter Dimensions in Millimeters and (Inches) Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. * Gate
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