MDD1752. MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ. Features. General Description. Applications
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1 General Description The MDD1752 uses advanced MagnaChip s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low, low gate charge can be offering superior benefit in the application. MDD1752 N-Channel Trench MOSFET 4V, 5A, 8.mΩ Features Applications G = 4V = = 1V < = 1V < = 4.5V Inverters General purpose applications D S Absolute Maximum Ratings (T C =25 o C unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage S 4 V Gate-Source Voltage S ±2 V Continuous Drain Current (Note 2) T C=25 o C (a) 5 A =25 o C (b) 15.2 A Pulsed Drain Current M 1 A Power Dissipation for Single Operation T C=25 o C 45 =25 o C Single Pulse Avalanche Energy (Note 3) E AS 153 mj Junction and Storage Temperature Range T J, T stg -55~+15 P D 3.1 W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Note 1) R θja 4 Thermal Resistance, Junction-to-Case R θjc 2.8 o C/W 1
2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDD1752RH -55~15 o C TO-252 Tape & Reel Halogen Free Electrical Characteristics (T J =25 o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25µA, = V V Gate Threshold Voltage (th) =, = 25µA Zero Gate Voltage Drain Current SS = 32V, = V µa Gate Leakage Current I GSS = ±2V, = V Drain-Source ON Resistance = 1V, = 14A mω = 4.5V, = 11A Forward Transconductance g FS = 5V, = 14A S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs = 2V, = 14A, = 1V nc Gate-Drain Charge Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss = 2V, = V, f = 1.MHz pf Output Capacitance C oss Turn-On Delay Time t d(on) Turn-On Rise Time t r = 1V, = 2V, = 1A, ns Turn-Off Delay Time t R GEN = 6Ω d(off) Turn-Off Fall Time Drain-Source Body Diode Characteristics t f Source-Drain Diode Forward Voltage V SD I S = 14A, = V V Body Diode Reverse Recovery Time t rr I F = 14A, di/dt = 1A/µs ns Body Diode Reverse Recovery Charge nc Q rr Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. P D is based on T J(MAX)=15 C a. P D (T C=25 C) is based on R θjc, b. P D (=25 C) is based on R θja 3. Starting T J=25 C, L=1mH, I AS=17.5A, V DD=4V, =1V 2
3 , (Normalized) Drain-Source On-Resistance = 1V Notes : 1. = 1 V 2. = 14 A 4.5V 6.V 5.V V, Drain-Source Voltage [V] Fig.1 On-Region Characteristics 3.5V 3.V Normalized Drain-Source On-Resistance [mω ], Drain-Source On-Resistance = 3V 3.5V 4.5V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = 125 = 25 5.V 4.V 6.V 1V T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature , Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage Notes : = 5V = R, Reverse Drain Current [A] Notes : = V = , Gate-Source Voltage [V] V SD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
4 , Gate-Source Voltage [V] Note : I = 14A D = 2V 1V Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) 3V Q G, Total Gate Charge [nc] 1 ms 1 ms 1s DC Single Pulse R thja =96 /W =25 1 ms 1 µs Capacitance [F] 8.p 4.p I (AS), AVALANCHE CURRENT (A) 2.n 1.6n 1.2n C rss C oss C iss, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics T J =25 Notes ; 1. = V 2. f = 1 MHz , Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area t AV, TIME IN AVALANCHE (ms) Fig.1 Unclamped Inductive Switching Capability 7 1 D= Z θ JA (t), Thermal Response single pulse Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JA * R θ JA (t) + R Θ JA =96 /W T C, Case Temperature [ ] t 1, Rectangular Pulse Duration [sec] Fig.11 Maximum Drain Current vs. Case Temperature Fig.12 Transient Thermal Response Curve 4
5 P(pk), Peak Transient Power [W] Single Pulse R Θ JA =96 /W =25 1E T 1, Time [sec] Fig13. Single Pulse Maximum Power Dissipation I(pk), Peak Transient Current [A] E T 1, Time [sec] Single Pulse R Θ JA =96 /W =25 Fig14. Single Pulse Maximum Peak Current 5
6 Physical Dimensions 2 Leads, DPAK (TO252) Dimensions are in millimeters unless otherwise specified 6
7 Worldwide Sales Support Locations U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 9485 U.S.A Tel : Fax : americasales@magnachip.com Chicago Office 23 Barrington Road, Suite 33 Hoffman Estates, IL 6195 U.S.A Tel : Fax : U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 () Fax : +44 () europesales@magnachip.com Japan Tokyo Office Shinbashi 2-chome MT bldg 4F Shinbashi, Minato-ku Tokyo, 15-4 Japan Tel : Fax : japansales@magnachip.com Osaka Office 3F, Shin-Osaka MT-2 Bldg Miyahara Yodogawa-Ku Osaka, Japan Tel : Fax : osakasales@magnachip.com Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : Fax : taiwansales@magnachip.com China Hong Kong Office Office 3, 42/F, Office Tower Convention Plaza 1 Harbour Road, Wanchai, Hong Kong Tel : Fax : chinasales@magnachip.com Shenzhen Office Room 183, 18/F International Chamber of Commerce Tower Fuhua 3Road, Futian District ShenZhen, China Tel : Fax : Shanghai Office Ste 192, 1 Huaihai Rd. (C) 221 Shanghai, China Tel : Fax : Korea 891, Daechi-Dong, Kangnam-Gu Seoul, Korea Tel : Fax : ~9 koreasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 7
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