P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ. Characteristics Symbol Rating Unit. T C=25 o C A T C=100 o C

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1 General Description The MDD375 uses advanced MagnaChip s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low R DS(ON), Low Gate Charge can be offering superior benefit in the application. MDD375 P-Channel Trench MOSFET, -V, -2.A, 3mΩ Features V DS = -V I D = = -1V R DS(ON) < = -1V < = -.5V Applications Inverters General purpose applications D G S Absolute Maximum Ratings (T C =25 o ) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS - V Gate-Source Voltage S ±2 V Continuous Drain Current (Note 2) T C=25 o C -2. A T C=1 o C I D -15. A Pulsed Drain Current I DM -5 A Power Dissipation T C=25 o C 1.7 T C=1 o C Single Pulse Avalanche Energy (Note 3) E AS.5 mj Junction and Storage Temperature Range T J, T stg -55~+15 P D 16.7 W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Note 1) R θja Thermal Resistance, Junction-to-Case R θjc 3. o C/W October 28. Version 1. 1

2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDD375RH -55~15 o C TO-252 Tape & Reel Halogen Free Electrical Characteristics (T J =25 o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS I D = -25µA, = V V Gate Threshold Voltage (th) V DS =, I D = -25µA Zero Gate Voltage Drain Current I DSS V DS = -32V, = V - -1 µa Gate Leakage Current I GSS = ±2V, V DS = V - - ±.1 Drain-Source ON Resistance R DS(ON) = -1V, I D = -6A mω = -.5V, I D = -A 3 58 Forward Transconductance g FS V DS = -1V, I D = -6A 12 - S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs V DD = -28V, I D = -6A, = 1V nc Gate-Drain Charge -. - Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss V DS = -25V, = V, f = 1.MHz Output Capacitance C oss Turn-On Delay Time t d(on) Turn-On Rise Time t r = -1V,V DD = -2V, Turn-Off Delay Time t d(off) I D = -1A, R GEN=3.3Ω Turn-Off Fall Time Drain-Source Body Diode Characteristics t f Source-Drain Diode Forward Voltage V SD I S = -6A, = V V Reverse Recovery Time trr I S = -6A, di/dt=1a/us ns Reverse Recovery Charge Qrr nc pf ns Note : 1. Surface mounted RF board with 2oz. Copper. 2. P D is based on T J(MAX)=15 O C, P D(T C=25 O C) is based on R θjc. 3. Starting T J=25 C, L=1mH, I AS=-9A V DD=-2V, =-1V October 28. Version 1. 2

3 -I D = -1V -8V -.5V -.V Fig.1 On-Region Characteristics -3.V Drain-Source On-Resistance [mω] -V DS, Drain-Source Voltage [V] = -.5V = -1V -I D Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Notes : 1. = 1 V 2. I D = -6 A 1 R DS(ON), (Normalized) Drain-Source On-Resistance R DS(ON) [mω ], Drain-Source On-Resistance = 125 = T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature , Gate to Source Volatge [V] Fig. On-Resistance Variation with Gate to Source Voltage 2 Notes : V DS = -5V Notes : = V I D = I S, Reverse Drain Current [A] 1 1 = , Gate-Source Voltage [V] Fig.5 Transfer Characteristics V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature October 28. Version 1. 3

4 -, Gate-Source Voltage [V] Note : I = -6A D V DS = -28V Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics Capacitance [F] 1.2n 1.n 8.p 6.p.p 2.p C rss C oss C iss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. = V 2. f = 1 MHz -I D Operation in This Area is Limited by R DS(on) 1 µs 1 ms 1 ms 1 ms DC -I D Single Pulse R thjc =3. /W T C = V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area T C, Case Temperature [ ] Fig.1 Maximum Drain Current vs. Case Temperature 1 D=.5 Z θ JC (t), Thermal Response single pulse.1 Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve October 28. Version 1.

5 Physical Dimensions 2 Leads, DPAK (TO252) Dimensions are in millimeters unless otherwise specified October 28. Version 1. 5

6 Worldwide Sales Support Locations U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 985 U.S.A Tel : Fax : americasales@magnachip.com Chicago Office 23 Barrington Road, Suite 33 Hoffman Estates, IL 6195 U.S.A Tel : Fax : U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : + () Fax : + () europesales@magnachip.com Japan Tokyo Office Shinbashi 2-chome MT bldg F Shinbashi, Minato-ku Tokyo, 15- Japan Tel : Fax : japansales@magnachip.com Osaka Office 3F, Shin-Osaka MT-2 Bldg Miyahara Yodogawa-Ku Osaka, Japan Tel : Fax : osakasales@magnachip.com Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,11 Taiwan R.O.C Tel : Fax : taiwansales@magnachip.com China Hong Kong Office Office 3, 2/F, Office Tower Convention Plaza 1 Harbour Road, Wanchai, Hong Kong Tel : Fax : chinasales@magnachip.com Shenzhen Office Room 183, 18/F International Chamber of Commerce Tower Fuhua 3Road, Futian District ShenZhen, China Tel : Fax : Shanghai Office Ste 192, 1 Huaihai Rd. (C) 221 Shanghai, China Tel : Fax : Korea 891, Daechi-Dong, Kangnam-Gu Seoul, Korea Tel : Fax : ~9 koreasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. October 28. Version 1. 6