RU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
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1 P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications Power management LED Driver Battery protection Pin Description D2 D2 D D pin SOP-8 S G2 S2 G Absolute Maximum Ratings Dual P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage -3 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T A =25 C - A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T A =25 C -2 A I D 2 Continuous Drain Current(V GS =-V) T A =25 C -5 T A =7 C -4 A P D Maximum Power Dissipation T A =25 C 2.5 T A = C W R JC Thermal Resistance-Junction to Case - C/W R JA 3 Thermal Resistance-Junction to Ambient 5 C/W Drain-Source Avalanche Ratings E AS 4 Avalanche Energy, Single Pulsed - mj Rev. A JUN., 28
2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) RU4953BH Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µA -3 V I DSS V DS =-3V, V GS =V - Zero Gate Voltage Drain Current µa T J =25 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA V I GSS Gate Leakage Current V GS =±2V, V DS =V ± na R DS(ON) 5 V GS =-V, I DS =-5A 5 7 mω Drain-Source On-state Resistance VGS =-4.5V, I DS =-4A 7 9 mω Diode Characteristics 5 V SD Diode Forward Voltage I SD =-A, V GS =V -.2 V trr Reverse Recovery Time 2 ns ISD=-5A, dlsd/dt=a/µs Qrr Reverse Recovery Charge nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz.5 Ω C iss Input Capacitance V GS =V, 69 C oss Output Capacitance V DS =-5V, Frequency=.MHz 45 pf C rss Reverse Transfer Capacitance 7 t d(on) Turn-on Delay Time 9 t V r Turn-on Rise Time DD =-5V, R L =3Ω, 7 I DS =-5A, V GEN =-V, t d(off) Turn-off Delay Time R 47 G =4.7Ω t f Turn-off Fall Time 23 ns Gate Charge Characteristics 6 Q g Total Gate Charge 4 Q gs Gate-Source Charge V DS =-24V, V GS =-V, I DS =-5A 2.6 Q gd Gate-Drain Charge 4. nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax. Starting T J = 25 C. 5Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Rev. A JUN.,
3 Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU4953BH RU4953BH SOP-8 Tape&Reel mm Rev. A JUN.,
4 Typical Characteristics 3 Power Dissipation 6 Drain Current P D -Power (W) I D - Drain Current (A) T J - Junction Temperature ( C) R DS(ON) limited Safe Operation Area DC µs µs ms ms T C =25 C... V DS - Drain-Source Voltage (V) -I D - Drain Current (A) R DS(ON) - On - Resistance (mω) VGS=-V T J - Junction Temperature ( C) Drain Current V GS - Gate-Source Voltage (V) Ids=-5A ZthJA - Thermal Response ( C/W) Thermal Transient Impedance Duty=.5,.2,.,.5,.2,., Single Pulse Single Pulse R θja =5 C/W..... Square Wave Pulse Duration (sec) Rev. A JUN.,
5 Typical Characteristics Output Characteristics -I D - Drain Current (A) V -7V -4.5V -3V -2V V DS - Drain-Source Voltage (V) R DS(ON) - On Resistance (mω) Drain-Source On Resistance -4.5V -V I D - Drain Current (A) Normalized On Resistance V GS =-V I D =-5A Drain-Source On Resistance.5 T J =25 C Rds(on)=5mΩ T J - Junction Temperature ( C) -I S - Source Current (A). Source-Drain Diode Forward T J =5 C T J =25 C -V SD - Source-Drain Voltage (V) C - Capacitance (pf) Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) VDS=-24V IDS=-5A Gate Charge Q G - Gate Charge (nc) Rev. A JUN.,
6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A JUN.,
7 EEA2bAARU4953BH Package Information SOP-8 CeDMIN NOM MAX MIN NOM MAX θ LSYMBOL MM INCH A A A b c D E E e.27 BSC.5 BSC L θ 8 8 Rev. A JUN.,
8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) FAX: (86-755) Rev. A JUN.,
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UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
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WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
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DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
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http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
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Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
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UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
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UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2 13A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM50-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such
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Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
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General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
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UNISONIC TECHNOLOGIES CO., LTD DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD466 provides excellent R DS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary
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http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or power
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TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
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UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
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UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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