RU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.
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1 P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m VGS=-4.5V RDS (ON) =55m VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOT23-3 Applications Power Management Load Switch Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage -20 V GSS Gate-Source Voltage ±12 V T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 C I S Diode Continuous Forward Current T A =25 C -1.5 A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested T A =25 C A I D P D R JA 2 Continuous Drain Current(V GS =-4.5V) T A =25 C -4 T A =70 C -3.2 A Maximum Power Dissipation T A =25 C 1.3 T A =70 C 0.8 W Thermal Resistance-Junction to Ambient 100 C/W
2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P4C Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =-250 A -20 V I DSS V DS =-20V, V GS =0V -1 Zero Gate Voltage Drain Current A T J =85 C -30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-250 A V I GSS Gate Leakage Current V GS =±10V, V DS =0V ±100 na R DS(ON) 3 Drain-Source On-state Resistance V GS =-4.5V, I DS =-4A m V GS =-2.5V, I DS =-3A m Diode Characteristics V SD 3 Diode Forward Voltage ISD =-1A, V GS =0V -1 V trr Reverse Recovery Time ISD=-4A, dlsd/dt=100a/ s 15 ns Qrr Reverse Recovery Charge 8 nc Dynamic Characteristics 4 R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 7.5 C iss Input Capacitance VGS=0V, 585 C oss Output Capacitance VDS=-10V, 95 C rss Reverse Transfer Capacitance Frequency=1.0MHz 50 t d(on) Turn-on Delay Time 8 t r Turn-on Rise Time VDD=-10V, RL=2.5, 11 IDS=-4A, VGEN=-4.5V, t d(off) Turn-off Delay Time RG=6 30 t f Turn-off Fall Time 10 Gate Charge Characteristics 4 Q g Total Gate Charge 9 13 Q gs Gate-Source Charge VDS=-16V, VGS=-4.5V, IDS=-4A 1.8 Q gd Gate-Drain Charge 2.9 pf ns nc Notes: 1Pulse width limited by safe operating area. 2When mounted on 1 inch square copper board, t 10sec. The value in any given application depends on the user's specific board design. 3Pulse test ; Pulse width 300 s, duty cycle 2%. 4Guaranteed by design, not subject to production testing. 2
3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) -ID - Drain Current (A) T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) Normalized Effective Transient -V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3
4 Typical Characteristics Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mω) -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m ) Normalized Threshold Voltage -V GS - Gate-Source Voltage (V) T j - Junction Temperature ( C) 4
5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance -IS - Source Current (A) T j - Junction Temperature ( C) -V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) -VGS - Gate-Source Voltage (V) -V DS - Drain-Source Voltage (V) Q G - Gate Charge (nc) 5
6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6
7 Ordering and Marking Information Device Marking 1 Package Packaging Quantity Reel Size Tape width RU20P4C 2XYWW SOT23-3 Tape&Reel mm 1 The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week 7
8 Package Information SOT23-3 SYMBOL MM INCH MM INCH SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX A E A E A e 0.950(BSC) 0.037(BSC) b e c L D θ ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 8
9 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
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P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More informationHCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET
HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching
More informationNCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationPE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.
More informationHRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching
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UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
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UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
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Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 30P25 NCE30P25S SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or power
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WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
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UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 1A, 3V N-CHANNEL POWER MOSFET DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent R DS(ON), low gate charge and
More informationP-Channel Enhancement Mode Field Effect Transistor
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units
Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
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UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
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