V DSS Drain-Source Voltage 60 V V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG

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1 N-Channel Advanced HV Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching TO-220 TO-263 TO-220F TO-247 Absolute Maximum Ratings N-Channel MOSFE Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 60 V V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 200 A Mounted on Large Heat Sink I DP 300μs Pulsed Drain Current Tested TC=25 C 800 a I D P D TC=25 C 200 b A Continue Drain Current TC=100 C 140 TC=25 C 380 Maximum Power Dissipation W TC=100 C 220 RθJC Thermal Resistance -Junction to Case 0.45 C/W RθJA Thermal Resistance-Junction to Ambient 62.5 Drain-Source Avalanche Ratings EAS Avalanche Energy,Single Pulsed L=0.3mH 1500 mj Note:a : Pulse width limited by safe operating area. b: Current limited by package( Limitation Current is 75A ) Rev. A

2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU6199 Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =-250μA 60 V I DSS Zero Gate Voltage Drain Current V DS = 60V, V GS =0V 1 T J =85 C 30 μa V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-250μA V I GSS Gate Leakage Current V GS =±25V, V DS =0V ±100 na R DS(ON) c Drain-Source On-state Resistance V GS = 10V, I DS =40A mω Diode Characteristics V SD c Diode Forward Voltage I SD =40 A, V GS =0V V trr Reverse Recovery Time 75 ns ISD=40A, dlsd/dt=100a/μs qrr Reverse Recovery Charge 150 nc Dynamic Characteristics d R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 1.4 Ω C iss Input Capacitance VGS=0V, 5800 C oss Output Capacitance VDS= 30V, 1500 Frequency=1.0MHz Reverse Transfer Capacitance 490 C rss pf t d(on) Turn-on Delay Time t r Turn-on Rise Time VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, t d(off) Turn-off Delay Time RG=6Ω ns t f Turn-off Fall Time Gate Charge Characteristics d Q g Total Gate Charge VDS=30V, VGS= 10V, Q gs Gate-Source Charge 45 IDS=40A Q gd Gate-Drain Charge 48 nc Notes: c Pulse test ; Pulse width 300μs, duty cycle 2%. d Guaranteed by design, not subject to production testing. 2

3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) Tj - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3

4 Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (MR) Normalized Threshold Vlotage VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 4

5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) T j - Junction Temperature ( C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) VGS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) Q G - Gate Charge (nc) 5

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6

7 Ordering and Marking Information RU6199 Package (Available) Q:TO-247 ; R: TO-220 ; S: TO-263 ; P: TO-220F Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Device Packaging T : TUBE TR : Tape & Reel 7

8 Package Information 8

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12 Devices per Unit Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-220FB-3L TO-220F-3L TO-263-2L TO-263-3L Package Type Units/Reel Reels/ Inner Box Units/Carton Box TO-263-2L TO-263-3L Reliability Test Program Test Item Reference Standard Test Condition MSL3 JESD22-020C Baking:125,24 hrs Moisture Soak: 60 /60 %RH 40 hrs Reflow Tp: 260-5/+0 PCT JESD22-A %RH 205Kpa 168hrs TCT JESD22-A ~ cycles THT JESD22-A /85%RH 500hrs HTST JESD22-A hrs 12

13 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)