RU6888R3. N-Channel Advanced Power MOSFET. Applications. S N-Channel MOSFET. Absolute Maximum Ratings. 68V/88A, R DS (ON) =6mΩ(Typ.
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1 N-Channel Advanced Power MOSFET Features 68V/88A, R DS (ON) =6mΩ(Typ.)@V GS =V Insulation Slug(V ISO 5VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin Description Insulation Slug S D G Applications Switching Application Systems Inverter Systems G TO22S D Absolute Maximum Ratings S N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 68 V GSS Gate-Source Voltage ±25 V T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 88 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =25 C 32 A I D 2 T C =25 C 88 Continuous Drain Current(V GS =V) A T C = C 65 P D Maximum Power Dissipation T C =25 C 2 T C = C 6 W R JC Thermal Resistance-Junction to Case.25 C/W R JA Thermal Resistance-Junction to Ambient 62.5 C/W Drain-Source Avalanche Ratings 3 E AS Avalanche Energy, Single Pulsed 225 mj Rev. A MAY., 24
2 Electrical l Characteristics t i ti (T C =25 C Unless Otherwise Noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µA 68 V I DSS V DS =68V, V GS =V Zero Gate Voltage Drain Current µa T J =25 C 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA V I GSS Gate Leakage Current V GS =±25V, V DS =V ± na R 4 DS(ON) Drain-Source On-state Resistance V GS =V, I DS =4A 6 8 mω Diode Characteristics 4 V SD Diode Forward Voltage I SD =4A, V GS =V.2 V trr Reverse Recovery Time 49 ns ISD=4A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 93 nc Dynamic Characteristics 5 R G Gate Resistance V GS =V,V DS =V,F=MHz.4 Ω C iss Input Capacitance V GS =V, 29 C oss Output Capacitance V DS =3V, Frequency=.MHz 34 pf C rss Reverse Transfer Capacitance 2 t d(on) Turn-on Delay Time 3 t r Turn-on Rise Time V DD =3V,I DS =4A, 5 t d(off) Turn-off Delay Time V GEN =V,R G =8Ω 29 ns t f Turn-off Fall Time 55 Gate Charge Characteristics 5 Q g Total Gate Charge 65 Q gs Gate-Source Charge V DS =54V, V GS =V, I DS =4A 2 Q gd Gate-Drain Charge 2 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. 3Limited by T Jmax, I AS =3A, V DD = 48V, R G = 5Ω, Starting T J = 25 C. 4Pulse test;pulse width 3µs, duty cycle 2%. 5Guaranteed by design, not subject to production testing. Rev. A MAY.,
3 Ordering Od and dmarking Information Device Marking Package Packaging Quantity Reel Size Tape width TO22S Tube Rev. A MAY.,
4 Typical Characteristics ti 4 Power Dissipation Drain Current P D -Powe er (W) T J - Junction Temperature ( C) I D - Drain Curre ent (A) Limited By Package V GS =V T J - Junction Temperature ( C) I D - Drain Current (A A) ted R DS(ON) limi Safe Operation Area DC T C =25 C... V DS - Drain-Source Voltage (V) µs µs ms ms R DS(ON) - On - Resistan nce (mω) Drain Current I DS =4A V GS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJC - Ther rmal Response ( C/W W) Duty=.5,.2,.,.5,.2,., Single Pulse. Single Pulse. R θjc =.25 C/W. E Square Wave Pulse Duration (sec) Rev. A MAY.,
5 Typical Characteristics ti 24 Output Characteristics 3 Drain-Source On Resistance I D - Drain Cu urrent (A) V 6V 4V 3V 8V V DS - Drain-Source Voltage (V) tance (mω) R DS(ON) - On Resist V GS =V I D - Drain Current (A) No ormalized On Resist tance V GS =V I D =4A Drain-Source On Resistance t (A) I S - Source Current T J =25 C Rds(on)=6mΩ T J - Junction Temperature ( C) Source-Drain Diode Forward T J =75 C T J =25 C V SD - Source-Drain Voltage (V) C - Capacitance (pf F) Capacitance Frequency=.MHz Ciss Coss Crss V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) Gate Charge V DS =54V I DS =4A Q G - Gate Charge (nc) Rev. A MAY.,
6 Avalanche Test Circuit it and Waveforms f Switching Time Test Circuit and Waveforms Rev. A MAY.,
7 LDQLDHHD2 Package Information TO22SEA2xE2A2bcbeeE2.54. A e RθθSYMBOL MM INCH SYMBOL MM INCH NOM MIN MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX BSCEA Φp 3.2 * *.3 A e 5.8 BSC.2 BSC b H b H c L D L * * 3.92 * *.54 D Φp D Q * 2.74 * *.8 * E R E θ E θ ARev. A MAY.,
8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 5, the 5floor An Tong Industrial Building, NO.27 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755) Rev. A MAY.,
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