RU205B. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings SOT-23. Load Switch PWM Applications.
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1 N-Channel Advanced Power MOSFET MOSFET Features 20V/5A, RDS (ON) =30mΩ VGS=4.5V RDS (ON) =38mΩ VGS=2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOT-23 Applications Load Switch PWM Applications Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 20 V GSS Gate-Source Voltage ±12 V T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 C I S Diode Continuous Forward Current T A =25 C 1.25 A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested T A =25 C 20 1 A I D P D R θja 2 Continuous Drain Current(V GS =4.5V) T A =25 C 5 T A =70 C 4 A Maximum Power Dissipation T A =25 C 1 T A =70 C 0.64 W Thermal Resistance-Junction to Ambient 125 C/W
2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU205B Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 20 V I DSS V DS =20V, V GS =0V 1 Zero Gate Voltage Drain Current µa T J =85 C 30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA V I GSS Gate Leakage Current V GS =±12V, V DS =0V ±100 na 3 R DS(ON) Drain-Source On-state Resistance V GS=4.5V, I DS=5A mω V GS =2.5V, I DS =3A mω Diode Characteristics V SD 3 Diode Forward Voltage ISD =1A, V GS =0V 1.0 V trr Reverse Recovery Time ISD=1A, dlsd/dt=100a/µs 13 ns Qrr Reverse Recovery Charge 4 nc Dynamic Characteristics 4 R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 0.8 Ω C iss Input Capacitance VGS=0V, 208 C oss Output Capacitance VDS=10V, 30 C rss Reverse Transfer Capacitance Frequency=1.0MHz 18 t d(on) Turn-on Delay Time 6 t r Turn-on Rise Time VDD=10V, RL=10Ω, 10 IDS=1A, VGEN=4.5V, t d(off) Turn-off Delay Time RG=1Ω 14 t f Turn-off Fall Time 7 Gate Charge Characteristics 4 Q g Total Gate Charge 4 Q gs Gate-Source Charge VDS=16V, VGS=4.5V, IDS=1A 0.5 Q gd Gate-Drain Charge 1.2 pf ns nc Notes: Pulse width limited by safe operating area. 2When mounted on 1 inch square copper board, t 10sec. The value in any given application depends on the user's specific board design. 3Pulse test ; Pulse width 300µs, duty cycle 2%. 4Guaranteed by design, not subject to production testing. 2
3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3
4 Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m ) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature ( C) 4
5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) T j - Junction Temperature ( C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) VGS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) Q G - Gate Charge (nc) 5
6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6
7 Ordering and Marking Information Device Marking 1 Package Packaging Quantity Reel Size Tape width RU205B 5XYWW SOT-23 Tape&Reel mm 1 The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week 7
8 Package Information SOT-23 SYMBOL MM INCH MM INCH SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX A E A e TYP TYP. A e b L REF REF. c L D θ E ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 8
9 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)
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