PPMT12V4 P-Channel MOSFET

Transcription

1 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -2 V GS =-4.5V -4.3 G() S(2) Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS -2 V Gate-Source Voltage V GS ±8.0 V Drain Current Continuous T A =25 I D -4.3 A Pulsed T A =70 I D -3.4 A Pulsed Drain Current I DM -34 A Total Power Dissipation T A =25 P D.3 W T A =25 P D 0.8 W Linear Derating Factor 0.0 W/ Single Pulse Avalanche Energy E AS 33 mj Junction and Storage Temperature Range T J,T STG -55 to +50 Thermal resistance Parameter Symbol Typ. Max. Units Maximum Junction-to-Ambient R θja 75 /W Rev.06

2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =-250μA,V GS =0V V Zero Gate Voltage Drain Current I DSS V DS =-2V,V GS =0V μa Gate-to-Source Forward Leakage I GSS V GS =-8.0V na Gate Threshold Voltage V GS(th) V DS =V GS, I D =-250μA V V GS =-4.5V, I D =-4.3A Ω Static Drain-Source On-Resistance R DS(ON) V GS =-2.5V, I D =-2.5A Ω V GS =-.8V, I D =-2.0A Ω Forward Trans conductance g FS V DS =-V, I D =-4.3A S Total Gate Charge Qg Gate-to-Source Charge Qgs I D =-4.3A, V DS =-V, V GS =-5.0V -.4 Gate-to-Drain(Miller) Charge Qgd -.6 nc Input Capacitance C ISS pf Output Capacitance C DSS V GS =0V, V DS =-V, f=mhz pf Reverse Transfer Capacitance C RSS - 60 pf Turn-On Delay Time t d(on) - - Rise Time t r V DD =-6.0V, I D =-.0A, Turn-Off Delay Time t d(off) R D =6.0Ω, R G =89Ω ns Fall Time t f Source-Drain Rating and Characteristics Parameter Symbol Conditions Min. Typ. Max. Units MOSFET symbol showing Continuous Source Current (Body Diode) I S the integral reverse p-n junction diode A Diode Forward Voltage V SD T J =25,I S =-.3A,V GS =0V V Reverse Recovery Time t rr ns T J =25,I F =-.3A,di/dt=-A/μs Reverse Recovery Charge Q rr nc Rev

3 Typical Characteristics Drain-to-Source Current: ID(A) -.0V V GS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V Bottom -.0V 20μs pulse width T J = Drain-to-Source Voltage :V DS (V) Fig. Typical output characteristics Drain-to-Source Current: ID(A) -.0V 20μs pulse width T J = Drain-to-Source Voltage :V DS (V) Fig 2. Typical output characteristics V GS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V Bottom -.0V Drain-to-Soutce current: ID (A).0 T J =25 T J =50 V DS =-2V 20μs pulse width Gate-to-Source Voltage :V GS (V) Fig 3. Typical transfer characteristics Static Drain-Source On-State Resistance: RDS(ON)(mΩ) I D =-4.3A V GS =-4.5V Junction Temperature :T J ( ) Fig 4. Normalized On-Resistance vs, Temperature C, Capacitance (pf) C ISS C OSS C RSS V GS =0V,f=MHz C ISS =Qgs+Qgd Shorted C RSS =Qgd C OSS =Qds+Qgd Gare-to-Source voltage: VGS (V) I D =-4.3A V DS =-V 0 Drain-to-Source Volatge :V DS (V) Fig 5. Typical Capacitance vs. Drain-to-Source voltage Total Gate Charge :Q G (nc) Fig 6. Typical Gate Charge vs. Gate-to-Source voltage Rev

4 0 Operation in this area limited by R DS(on) Reverse Drain Current :ISD (A) T j =50 T J =25 V GS =0V Source-to-Drain voltage :V SD (V) Fig 7. Typical Source-Drain Diode Forward Voltage Drain Current: ID (A) 0.0 T C =25 T J =50 Single Pulse us us ms ms Drain-to-Source voltage: V DS (V) Fig 8. Maximum Safe Operating Area Drain Current: ID(A) Single Pulse Avalanche Energy: EAS (mj) TOP Bottom I D -.9A -3.4A -4.3A Case Temperature:T C ( ) Fig 9. Maximum Drain Current vs. Case Temperature Junction Temperature : Starting T J ( ) Fig. Maximum Avalanche Energy vs. Drain Current 0 Thermal Response (ZthJA) I D = Single Pulse (Thermal Response) t2 Notes:. Duty factor D=t/t2 2. Peak T J =P DM *Z thja +T A Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient P DM t Rev

5 Drain-to-Source voltage: RDS(on) (Ω) I D =-4.3A Gate-to-Source voltage: V GS (V) Fig 2. Typical On-Resistance vs. Gate Voltage Drain-to-Source On Resistance: RDS(on) (Ω) V GS =-.8V V GS =-2.5V V GS =-4.5V Drain Current: I D (A) Fig 3. Typical On-Resistance vs. Drain Current 0.8 Gate threshold Voltage: VGS(th) (Ω) I D =-250μA Temperature: T J ( ) Fig4. Typical Threshold Voltage vs. Junction Temperature Rev

6 Product dimension(sot-23) A (3) θ C B () (2) D F E H G K J L Dim Millimeters Inches MIN MAX MIN MAX A B C D E F G H J K L θ 0 0 Rev

7 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev