APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.

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1 Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ V GS = 10V R DS(ON) =55mΩ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S1 G1 S2 G2 SOP-8 D1 D1 D2 D2 Applications D1 D1 D2 D2 LED Application System. G1 G2 S1 S2 N-Channel MOSFET Ordering and Marking Information APM8005 APM8005 K : APM8005 XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1

2 Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 80 V GSS Gate-Source Voltage ±25 V I D * Continuous Drain Current 4.7 V GS =10V I DM * Pulsed Drain Current 18 A I S * Diode Continuous Forward Current 2.5 I SM ** Pulse Source Current 18 T J Maximum Junction Temperature 150 T STG Storage Temperature Range -55 to 150 C P D * Maximum Power Dissipation T A =25 C 2 T A =100 C 0.8 W R θja * Thermal Resistance-Junction to Ambient 62.5 C/W E AS Drain-Source Avalanche Energy, L=0.1mH 16.3 mj Note *Surface Mounted on 1in 2 pad area, t 10sec. Electrical Characteristics (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA V I DSS V DS =64V, V GS =0V Zero Gate Voltage Drain Current µa T J =85 C V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA 1-3 V I GSS Gate Leakage Current V GS =±25V, V DS =0V - - ±100 na R DS(ON) a V GS =10V, I DS =4.7A Drain-Source On-state Resistance mω V GS =5V, I DS =4.5A Diode Characteristics V SD a Diode Forward Voltage I SD =2.5A, V GS =0V V t rr Reverse Recovery Time ns I SD =2.5A, di SD /dt=100a/µs Reverse Recovery Charge nc Q rr 2

3 Electrical Characteristics (Cont.) (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b Min. Typ. Max. R G Gate Resistance V GS =0V,V DS =0V,F=1MHz Ω C iss Input Capacitance V GS =0V, C oss Output Capacitance V DS =30V, Reverse Transfer Capacitance Frequency=1.0MHz C rss t d(on) Turn-on Delay Time T r Turn-on Rise Time V DD =40V, R L =40Ω, I DS =1A, V GEN =10V, t d(off) Turn-off Delay Time R G =6Ω Turn-off Fall Time T f Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V DS =40V, V GS =10V, I DS =4.7A Gate-Drain Charge Q gd Note a : Pulse test ; pulse width 300 µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns nc 3

4 Typical Operating Characteristics Power Dissipation Drain Current P tot - Power (W) I D - Drain Current (A) T A =25 o C,V G =10V T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance I D - Drain Current (A) Rds(on) Limit 300µs 1ms 10ms 100ms 1s DC T A =25 o C Normalized Transient Thermal Resistance Single Pulse 0.2 Duty = 0.5 Mounted on 1in 2 pad R θja :62.5 o C/W 1E-3 1E-4 1E V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4

5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance V GS =4,5,6,7,8,9,10V 70 I D - Drain Current (A) V R DS(ON) - On - Resistance (mω) V GS =5V V GS =10V 2 3V V DS - Drain-Source Voltage (V) I D - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage R DS(ON) - On Resistance (mω) I DS =4.7A Normalized Threshold Voltage I DS =250µA V GS - Gate - Source Voltage (V) T j - Junction Temperature ( C) 5

6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance V GS = 10V I DS = 4.7A I S - Source Current (A) T j =150 o C T j =25 o C R j =25 o C: 45mΩ T j - Junction Temperature ( C) V SD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 1400 Frequency=1MHz 1200 Ciss Coss Crss V GS - Gate - source Voltage (V) V DS =40V I DS = 4.7A V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc) 6

7 Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IAS VDD tp IL 0.01W EAS tav Switching Time Test Circuit and Waveforms VDS RD DUT VDS 90% RG VGS VDD tp 10% VGS td(on) tr td(off) tf 7

8 Package Information SOP-8 D SEE VIEW A E1 E h X 45 e b c A1 A2 A VIEW A L 0.25 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. A 1.75 MIN. MAX MILLIMETERS INCHES A1 A b c D E E e 1.27 BSC BSC h L Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. 8

9 Carrier Tape & Reel Dimensions OD0 P0 P2 P1 A H A E1 OD1 B A T B0 W F K0 B A0 SECTION A-A SECTION B-B d T1 Application A H T1 C d D W E1 F MIN. 1.5 MIN MIN SOP-8 P0 P1 P2 D0 D1 T A0 B0 K MIN (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel

10 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile 10

11 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 100 C 150 C seconds 150 C 200 C seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C seconds 217 C seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245 C HOLT JESD-22, A Hrs, 125 C PCT JESD-22, A Hrs, 100%RH, 2atm, 121 C TCT JESD-22, A Cycles, -65 C~150 C 11

12 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : Fax :