RU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET

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1 N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) RDS (ON) Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO252 Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 100 V GSS Gate-Source Voltage ±20 V T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current T C =25 C 16 A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested T C =25 C 64 1 A I D P D Continuous Drain Current(V GS =10V) Maximum Power Dissipation T C =25 C 16 2 A T C =100 C 11 T C =25 C 50 T C =100 C 25 R θjc Thermal Resistance-Junction to Case 3 C/W Drain-Source Avalanche Ratings E AS 3 Avalanche Energy, Single Pulsed 70 mj W

2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU1HE16L Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 100 V I DSS V DS = 100V, V GS =0V 1 Zero Gate Voltage Drain Current µa T J =85 C 30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA V I GSS Gate Leakage Current V GS =±16V, V DS =0V ±10 µa R DS(ON) 4 Drain-Source On-state Resistance V GS = 10V, I DS =5A mω V GS = 4.5V, I DS =2A mω Diode Characteristics V SD 4 Diode Forward Voltage ISD =5A, V GS =0V 1.1 V trr Reverse Recovery Time ISD=5A, dlsd/dt=100a/µs 40 ns Qrr Reverse Recovery Charge 70 nc Dynamic Characteristics 5 R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 1.8 Ω C iss Input Capacitance VGS=0V, 840 C oss Output Capacitance VDS= 50V, 70 C rss Reverse Transfer Capacitance Frequency=1.0MHz 40 t d(on) Turn-on Delay Time 10 t r Turn-on Rise Time VDD=50V, RL=30Ω, 13 IDS=5A, VGEN= 10V, t d(off) Turn-off Delay Time RG=6Ω 28 t f Turn-off Fall Time 15 Gate Charge Characteristics 5 Q g Total Gate Charge 18 Q gs Gate-Source Charge VDS=80V, VGS= 10V, IDS=5A 4 Q gd Gate-Drain Charge 5 pf ns nc Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. Limited by T Jmax, I AS =17A, V DD = 48V, R G = 50Ω, Starting T J = 25 C. Pulse test ; Pulse width 300µs, duty cycle 2%. Guaranteed by design, not subject to production testing. 2

3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3

4 Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m ) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature ( C) 4

5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) T j - Junction Temperature ( C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) VGS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) Q G - Gate Charge (nc) 5

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6

7 Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU1HE16L RU1HE16L TO-252 Tape&Reel mm 7

8 Package Information TO252-2L SYMBOL MM INCH MM INCH SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX A L A L REF REF. b L C L REF REF. D L D Φ D REF REF. θ E h e V REF REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 8

9 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)