P-Channel Enhancement Mode MOSFET

Transcription

1 Features -3V/-3, =46mΩ V GS =-1V =55mΩ V GS =-4.5V =79mΩ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices vailable (RoHS Compliant) Pin Description Top View D G S SOT-23 pplications Power Management in LCD TV, Monitor, Notebook Computer, Portable Equipment and Battery Powered Systems P-Channel MOSFET Ordering and Marking Information ssembly Material Handling Code Temperature Range Package Code Package Code : SOT-23 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel ssembly Material G: Halogen and Lead Free Device 19T Note: FNGJING lead-free products contain molding compounds/die attach materials and 1% matte tin plate terminalead-free products meet or exceed the lead-free requirements tion finish; which are fully compliant with RoHS. FNGJING of IPC/JEDEC J-STD-2C for MSL classification at lead-free peak reflow temperature. FNGJING defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). FNGJING reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -3 V GSS Gate-Source Voltage ±1 V I D * Continuous Drain Current -3 V GS =-1V I DM * 3µs Pulsed Drain Current -12 I S * Diode Continuous Forward Current -1 T J Maximum Junction Temperature 15 T STG Storage Temperature Range -55 to 15 C P D * Maximum Power Dissipation T =25 C.83 T =1 C.3 W R θj * Thermal Resistance-Junction to mbient 15 C/W Note : *Surface Mounted on 1in 2 pad area, t 1 sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µ V I DSS V DS =-24V, V GS =V Zero Gate Voltage Drain Current µ T J =85 C V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µ V I GSS Gate Leakage Current V GS =±1V, V DS =V - - ±1 µ V GS =-1V, I DS = a Drain-Source On-state Resistance V GS =-4.5V, I DS = mω V GS =-2.5V, I DS = Diode Characteristics V SD a Diode Forward Voltage I SD =-1, V GS =V V t rr Reverse Recovery Time ns I SD =-3, l SD /dt=1/µs Reverse Recovery Charge nc Q rr

3 Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Dynamic Characteristics b Min. Typ. Max. R G Gate Resistance V GS =V,V DS =V,F=1MHz Ω C iss Input Capacitance V GS =V, C oss Output Capacitance V DS =-15V, Reverse Transfer Capacitance Frequency=1.MHz C rss t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =-15V, R L =15Ω, I DS =-1, V GEN =-1V, t d(off) Turn-off Delay Time R G =6Ω Turn-off Fall Time t f Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V DS =-15V, V GS =-1V, I DS = Gate-Drain Charge Q gd Note a : Pulse test ; pulse width 3µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns nc

4 Typical Operating Characteristics Power Dissipation Drain Current P tot - Power (W) I D - Drain Current () T =25 o C T =25 o C,V G =-1V Junction Temperature ( C) - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance -I D - Drain Current () Rds(on) Limit 3µs 1ms 1ms 1ms 1s DC T =25 o C Normalized Transient Thermal Resistance Single Pulse.1.2 Duty =.5 Mounted on 1in 2 pad R θj : 15 o C/W 1E-3 1E-4 1E V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance I D - Drain Current () V GS = -2.5,-3,-4,-5, -6,-7,-8,-9,-1V -2V 1-1.5V On - Resistance (mω) V GS = -2.5V V GS = -4.5V V GS = -1V V DS - Drain - Source Voltage (V) -I D - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 1 I DS = I DS = -25µ On - Resistance (mω) Normalized Threshold Voltage V GS - Gate - Source Voltage (V) - Junction Temperature ( C)

6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance V GS = -1V I DS = Source-Drain Diode Forward Normalized On Resistance I S - Source Current () 1 =15 o C =25 o C.4 R =25 o C: 46mΩ Junction Temperature ( C) V SD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 1 Frequency=1MHz 9 8 Ciss Coss 1 Crss V GS - Gate - source Voltage (V) V DS = -15V I DS = V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc)

7 Package Information SOT-23 D e SEE VIEW 2.25 E1 E b c e1 1 L GUGE PLNE SETING PLNE S Y M B O L 1 2 b c D E E1 e e1 L.3 MIN MILLIMETERS.95 BSC 1.9 BSC MX SOT-23 VIEW MIN INCHES.37 BSC.75 BSC MX Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 1 mil per side.

8 Carrier Tape & Reel Dimensions OD P P2 P1 d H W F E1 K B OD1 B T B SECTION - SECTION B-B T1 pplication H T1 C d D W E1 F SOT MIN MIN. 2.2 MIN P P1 P2 D D1 T B K Devices Per Unit MIN (mm) Package Type Unit Quantity SOT-23 Tape & Reel 3

9 Taping Direction Information SOT-23 USER DIRECTION OF FEED Classification Profile

10 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds verage ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B12 5 Sec, 245 C HOLT JESD-22, 18 1 Hrs, 125 C PCT JESD-22, Hrs, 1%RH, 2atm, 121 C TCT JESD-22, 14 5 Cycles, -65 C~15 C