RU1H150S. S N-Channel MOSFET. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. 108V/150A, R DS (ON) =3.5mΩ(Typ.

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1 N-Channel Advanced Power MOSFET Features 8V/5A, R DS (ON) =3.5mΩ(Typ.)@V GS =V Advanced HEFET Technology Ultra Low On-Resistance Excellent Q g xr DS(on) Product % avalanche tested t 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications Motor Drives Uninterruptible Power Supplies DC/DC converter General Purpose Applications Absolute Maximum Ratings Pin Description D G S G TO263 D S N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 8 DSS V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 5 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =25 C 6 A I D 2 T C =25 C 5 Continuous Drain Current(V GS =V) A T C = C 6 P D Maximum Power Dissipation T C =25 C 288 T C = C 44 W R JC Thermal Resistance-Junction to Case.52 C/W R JA Thermal Resistance-Junction to Ambient 62.5 C/W Drain-Source Avalanche Ratings E AS Avalanche a Energy, Single Pulsed 625 mj E AS 3 Rev. A DEC., 25

2 Electrical l Characteristics t i ti (T C =25 C Unless Otherwise Noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µA 8 5 V I DSS V DS =8V, V GS =V Zero Gate Voltage Drain Current µa T J =25 C 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA 2 4 V I GSS Gate Leakage Current V GS =±2V, V DS =V ± na R 4 DS(ON) Drain-Source On-state Resistance V GS =V, I DS =75A mω Diode Characteristics 4 V SD Diode Forward Voltage I SD =75A, V GS =V.2 V trr Reverse Recovery Time 6 ns ISD=2A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 56 nc Dynamic Characteristics 5 R G Gate Resistance V GS =V,V DS =V,F=MHz 2.6 Ω C iss Input Capacitance V GS =V, 69 C oss Output Capacitance V DS =5V, Frequency=.MHz 25 pf C rss Reverse Transfer Capacitance 47 t d(on) Turn-on Delay Time 48 t r Turn-on Rise Time V DD =5V,I DS =75A, 56 t d(off) Turn-off Delay Time V GEN =V,R G =2.5Ω 75 ns t f Turn-off Fall Time 33 Gate Charge Characteristics 5 Q g Total Gate Charge 7 Q gs Gate-Source Charge V DS =5V, V GS =V, I DS =2A 4 Q gd Gate-Drain Charge 37 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. 3Limited by T Jmax, I AS =5A, V DD = 48V, R G = 5Ω, Starting T J = 25 C. 4Pulse test;pulse width 3µs, duty cycle 2%. 5Guaranteed by design, not subject to production testing. Rev. A DEC.,

3 Ordering Od and dmarking Information Device Marking Package Packaging Quantity Reel Size Tape width TO263 Tube Rev. A DEC.,

4 Typical Characteristics ti 35 Power Dissipation 6 Drain Current 3 4 P D -Powe er (W) I D - Drain Current (A A) I T J - Junction Temperature ( C) Safe Operation Area ted R DS(ON) limit DC T C =25 C... V DS - Drain-Source Voltage (V) µs µs ms ms I D - Drain Curre ent (A) R DS(ON) - On - Resistan nce (mω) V GS =V Limited By Package T J - Junction Temperature ( C) Drain Current I DS =75A V GS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJC - Ther rmal Response ( C/W W) Duty=.5,.2,.,.5,.2,., Single Pulse.. Single Pulse R θjc =.52 C/W. E Square Wave Pulse Duration (sec) Rev. A DEC.,

5 Typical Characteristics ti I D - Drain Cu urrent (A) V Output Characteristics 9V 8V 5 7V 6V 5V V DS - Drain-Source Voltage (V) tance (mω) R DS(ON) - On Resist 2 5 Drain-Source On Resistance V GS =V I D - Drain Current (A) No ormalized On Resist tance V GS =V I D =75A Drain-Source On Resistance t (A) I S - Source Current T J =25 C Rds(on)=3.5mΩ T J - Junction Temperature ( C) Source-Drain Diode Forward T J =75 C T J =25 C V SD - Source-Drain Voltage (V) C - Capacitance (pf F) Capacitance Frequency=.MHz Ciss Coss Crss V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) Gate Charge V DS =5V I DS =2A 5 5 Q G - Gate Charge (nc) Rev. A DEC.,

6 Avalanche Test Circuit it and Waveforms f Switching Time Test Circuit and Waveforms Rev. A DEC.,

7 Package Information TO263 θ θ θ2 θ θ2 SYMBOL MM INCH SYMBOL INCH MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX A L A L A L * *.7 * *.67 b.7 * *.37 L4.25 BSC. BSC b.4 *.4.45 *.55 L2 2.5 REF.98 REF c.33 *.65.3 *.26 θ * 8 * 8 c.5 *.4.45 *.55 θ D 8.59 * *.37 θ E 9.66 * *.45 DEP e 2.54BSC.BSC Φp H Rev. A DEC., MM

8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) FAX: (86-755) Rev. A DEC.,