RU12150Q. S N-Channel MOSFET. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. 120V/150A, R DS (ON) =8.5mΩ(Typ.
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1 N-Channel Advanced Power MOSFET Features 2V/5A, R DS (ON) =8.5mΩ(Typ.)@V GS =V Reliable and Rugged % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S Applications High Speed Power Switching High Efficiency i Synchronous in SMPS Automotive applications and a wide variety of other applications G TO247 D Absolute Maximum Ratings S N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 2 V GSS Gate-Source Voltage ±25 V T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 5 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =25 C 6 A I D 2 T C =25 C 5 Continuous Drain Current(V GS =V) A T C = C 6 P D Maximum Power Dissipation T C =25 C 394 T C = C 97 W R JC Thermal Resistance-Junction to Case.38 C/W R JA Thermal Resistance-Junction to Ambient 62.5 C/W Drain-Source Avalanche Ratings E 3 AS Avalanche Energy, Single Pulsed 6 mj Rev. A JUL., 24
2 Electrical l Characteristics t i ti (T C =25 C Unless Otherwise Noted) RU25Q Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µA 2 3 V I DSS V DS =2V, V GS =V Zero Gate Voltage Drain Current µa T J =25 C 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA V I GSS Gate Leakage Current V GS =±25V, V DS =V ± na R 4 DS(ON) Drain-Source On-state Resistance V GS =V, I DS =75A 8.5 mω Diode Characteristics 4 V SD Diode Forward Voltage I SD =75A, V GS =V.2 V trr Reverse Recovery Time 56 ns ISD=75A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 2 nc Dynamic Characteristics 5 R G Gate Resistance V GS =V,V DS =V,F=MHz.5 Ω C iss Input Capacitance V GS =V, 485 C oss Output Capacitance V DS =6V, Frequency=.MHz pf C rss Reverse Transfer Capacitance 23 t d(on) Turn-on Delay Time 22 t r Turn-on Rise Time V DD =6V,I DS =75A, 97 t d(off) Turn-off Delay Time V GEN =V,R G =5Ω 5 ns t f Turn-off Fall Time 5 Gate Charge Characteristics 5 Q g Total Gate Charge 93 Q gs Gate-Source Charge V DS =96V, V GS =V, I DS =75A 27 Q gd Gate-Drain Charge 3 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. 3Limited by T Jmax, I AS =49A, V DD = 48V, R G = 5Ω, Starting T J = 25 C. 4Pulse test;pulse width 3µs, duty cycle 2%. 5Guaranteed by design, not subject to production testing. Rev. A JUL.,
3 Ordering Od and dmarking Information Device Marking Package Packaging Quantity Reel Size Tape width RU25Q RU25Q TO247 Tube Rev. A JUL.,
4 Typical Characteristics ti 45 Power Dissipation 8 Drain Current 4 6 P D -Powe er (W) T J - Junction Temperature ( C) I D - Drain Curre ent (A) V GS =V Limited By Package T J - Junction Temperature ( C) I D - Drain Current (A A). limited R DS(ON) T C =25 C Safe Operation Area DC µs µs ms ms.. V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistan nce (mω) I DS =75A Drain Current V GS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJC - Ther rmal Response ( C/W W) Duty=.5,.2,.,.5,.2,., Single Pulse.. Single Pulse R θjc =.38 C/W. E Square Wave Pulse Duration (sec) Rev. A JUL.,
5 Typical Characteristics ti 5 Output Characteristics 25 Drain-Source On Resistance I D - Drain Cu urrent (A) ,9,V 6V 4V 3V V DS - Drain-Source Voltage (V) tance (mω) R DS(ON) - On Resist V GS =V I D - Drain Current (A) No ormalized On Resist tance V GS =V I D =75A Drain-Source On Resistance t (A) I S - Source Current T J =25 C Rds(on)=8.5mΩ T J - Junction Temperature ( C) Source-Drain Diode Forward T J =75 C T J =25 C V SD - Source-Drain Voltage (V) C - Capacitance (pf F) Capacitance Frequency=.MHz Ciss Coss Crss V DS - Drain-Source Voltage (V) V GS - Gate-Source Voltage (V) Gate Charge V DS =96V I DS =75A Q G - Gate Charge (nc) Rev. A JUL.,
6 Avalanche Test Circuit it and Waveforms f Switching Time Test Circuit and Waveforms Rev. A JUL.,
7 Package Information TO247 h顶杆孔深 hmin MM INCH 顶杆孔深 NOM MAX NOM MAX A A b b b c c D E E2 L REF 3.6REF REF.42REF L L Φ e H 5.45TYP 5.98REF.25TYP.235REF h SYMBOL 顶杆孔深 h Rev. A JUL.,
8 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 5, the 5floor An Tong Industrial Building, NO.27 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755) Rev. A JUL.,
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