LDR3 Outline Dimensions. Dimension Inches Millimeters

Transcription

1 OUTLINE DRAWING Dual SCR Module 5 Amperes / Volts Ordering Information: Select the complete eight-digit module part number from the table below. Example: LDR3165 is a 16V, 5 Ampere Dual SCR Isolated Module. Type Voltage Volts (x1) LDR Current Amperes (x1) 5 LDR3 Outline Dimensions Dimension Inches Millimeters A B C D E F G H J K L M N.39 1 P M1 Metric M1 Q.26 Dia. 6.5 Dia. R.2 5 S.12 3 T.11 x x.8 Note: Dimensions are for reference only. Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. has been tested and recognized by the Underwriters Laboratories. Features: Electrically Isolated Heatsinking Compression Bonded Elements Metal Baseplate Low Thermal Impedance for Improved Current Capability Includes Gate Lead Kits and M1 Terminal Hardware UL Recognized (E7824) RoHS Compliant Benefits: No Additional Insulation Components Required Easy Installation No Clamping Components Required Reduce Engineering Time Applications: Bridge Circuits AC & DC Motor Drives Battery Supplies Power Supplies Large IGBT Circuit Front Ends

2 Absolute Maximum Ratings Characteristics Conditions Symbol Units Repetitive Peak Forward and Reverse Blocking Voltage V DRM & V RRM up to 18 V Non-Repetitive Peak Blocking Voltage V RSM V RRM + 1 V (t < 5 msec) RMS Forward Current 18 Conduction, T C =85 C, 5 Hz I T(RMS) 785 A Average Forward Current 18 Conduction, T C =85 C, 5 Hz I T(AV) 5 A Peak One Cycle Surge Current, Non-Repetitive 6 Hz, V reapplied, T j = T j max I TSM 17, A 6 Hz, V reapplied, T j = 25 C I TSM 2, A 5 Hz, V reapplied T j = T j max I TSM 15,5 A 5 Hz, V reapplied, T j = 25 C I TSM 18, A I 2 t for Fusing for One Cycle 6 Hz, V reapplied, T j = T j max I 2 t 1.19 x 1 6 A 2 sec 6 Hz, V reapplied, T j = 25 C I 2 t 1.66 x 1 6 A 2 sec 5 Hz, V reapplied T j = T j max I 2 t 1.2 x 1 6 A 2 sec 5 Hz, V reapplied, T j = 25 C I 2 t 1.62 x 1 6 A 2 sec Average Forward Gate Power P G(AV) 4 W Maximum Rate-of-Rise of On-State Current, (Repetitive) T= T j max, V D =.67 V DRM, I TM = 2 I TAV, Gate Pulse: I G = 2 A, t GP = 5 µs, di G /dt>= 1 A/µs di/dt 4 A/µs Operating Temperature T J -4 to +13 C Storage Temperature T stg -4 to +125 C Max. Mounting Torque, M6 Mounting Screw 55 6 in. Lb. Nm Max. Mounting Torque, M1 Terminal Screw in. Lb. Nm Module Weight, Typical 1.5 kg 3.3 lb V 25C t= 1 minute, 5 Hz Vrms 3 V Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

3 Electrical Characteristics, TJ=25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Repetitive Peak Forward Leakage Current I DRM V D = V DRM,, T J =13 C 7 ma Repetitive Peak Reverse Leakage Current I RRM V R = V RRM, T J =13 C 7 ma Peak On-State Voltage V FM I TM =157A 1.5 V Threshold Voltage, Low-level Slope Resistance, Low-level V TM Coefficients, Full Range V (TO)1 r T1 T J = 13 C, I =.5 πi T(AV) to 1.5 πi T(AV).85.4 T J = 13 C, I =.5 πi T(AV) to 1.5 πi T(AV) V TM = A+ B Ln I +C I + D Sqrt I A = B = C = D = E Critical Rate of Rise of Off-State Voltage dv/dt V D =.67 V DRM, T j =13 C, Gate Open 1 V/µs Gate Trigger Current I GT T j =25 C, V D =12V 25 ma Gate Trigger Voltage V GT T j =25 C, V D =12V 2.5 V Non-Triggering Gate Voltage V GDM T j =13 C, V D =.67 V DRM.25 V Peak Forward Gate Current I GTM 4. A Peak Reverse Gate Voltage V GRM 5 V Latching Current I L T j = 25 C, V D = 12 V, Gate Pulse: I G = 2 A, t GP = 5 µs, di G /dt>= 1 A/µs V mω 1 ma Holding Current I H T j = 25 C, V D =.67 V DRM, Gate Open 3 ma Turn-Off Time t q Itm=I TAV, di/dt=1 A/us, dv D /dt=5 V/us, V D =.67 Vdrm, V R = 1 V, Tj=13 o C 25 µs Thermal Characteristics Characteristics Symbol Max. Units Thermal Resistance, Junction to Case RΘJ-C Per Module, both conducting Per Junction, both conducting Thermal Impedance Coefficients ZΘJ-C ZΘJ-C= K 1 (1-exp(-t/ 1 )) + K 2 (1-exp(-t/ 2 )) + K 3 (1-exp(-t/ 3 )) + K 4 (1-exp(-t/ 4 )) K 1 = 7.42E-4 K 2 = 9.52E-4 K 3 = 1.2E = 3.33E-4 2 = 4.74E-3 3 = 9.6E-2 K 4 = 5.23E-2 4 = Thermal Resistance, Case to Sink Lubricated RΘC-S Per Module.1 C/W C/W C/W

4 5 Maximum On-State Forward Voltage Drop ( Tj = 13 C ).7 Maximum Transient Thermal Impedance (Junction to Case) On-State Voltage - Vtm - Volts Thermal Impedance - Rjc - C/W Instantaneous On-State Current - Itm - Amperes Time -t -Seconds 8 Maximum On-State Power Dissipation (Sinusoidal Waveform) 14 Maximum Allowable Case Temperature (Sinusoidal Waveform) Maximum Power Dissipation Per SCR - Watts Max. Case Temperature - Tcase - C Average On-State Current - If(av) - Amperes Maximum On-State Power Dissipation (Rectangular Waveform) 14 Maximum Allowable Case Temperature (Rectangular Waveform) Maximum Power Dissipation Per SCR - Watts Max. Case Temperature - Tcase - C (DC)

5 Lead Kits The LDR3 modules are supplied with a standard gate lead kit. 1. Wire Composition FEP insulation rated to 2 C. 2. Lead Colors Red (cathode) and White (gate). Red lead is positioned next to the key on black polarized housing. 3. Receptacles Female terminal fits 2.8 x.8 blades. Control Lead Set #1 (Terminals 4 & 5) Control Lead Set #2 (Terminals 6 & 7)