SCR/GTO/Diode POW-R-BLOK Modules Ratings and Characteristics. 1.3 The Device Data Sheet
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- Corey Walton
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1 1.3 The Device Data Sheet The proper application of power semiconductors requires an understanding of their maximum ratings and electrical characteristics, information which is presented within the device data sheet.good design practice employs data sheet limits and not information obtained from small sample lots. A rating is a maximum or minimum value that sets a limit on device capability.operation in excess of a rating can result in irreversible degration or device failure. Maximum ratings represent extreme capabilities of a device. They are not to be used as design conditions. A characteristic is a measure of device performance under specified operating conditions expressed by minimum, typical, and/or maximum values, or shown graphically. Table 1.2 Major of a Typical POW-R-BLOK Module. Absolute Maximum Ratings Characteristics Symbol CM CM Units Peak Forward V DRM Volts Transient Peak Forward (Non-Repetitive), t < 5ms V DSM Volts DC Forward V D(DC) Volts Peak Reverse V RRM Volts Transient Peak Reverse (Non-Repetitive), t < 5ms V RSM Volts DC Reverse V R(DC) Volts RMS On-State I T(RMS), I F(RMS) Amperes Average On-State, T C = 82 C I T(AV), I F(AV) Amperes Peak One-Cycle Surge (Non-Repetitive) On-State (60Hz) I TSM,I F(TSM) Amperes Peak One-Cycle Surge (Non-Repetitive) On-State (50Hz) I TSM,I F(TSM) Amperes I2t (for Fusing), 8.3 milliseconds I2t A2sec Critical Rate-of-Rise of On-State * di/dt Amperes/ s Peak Gate P GM Watts Average Gate P G(AV) Watts Peak Forward Gate V GFM Volts Peak Reverse Gate V GRM Volts Peak Forward Gate I GFM Amperes Storage Temperature T STG -40 to to 125 C Operating Temperature T j -40 to to 125 C Maximum Mounting Torque M6 Mounting Screw lb.-in. Maximum Mounting Torque M5 Terminal Screw lb.-in. Module Weight (Typical) Grams V Isolation V RMS Volts *T j = 125 C, I G = 1.0A, V D = 1/2 V DRM x
2 Table 1.2 illustrates the major ratings and characteristics of a typical Powerex POW-R- BLOK SCR/Diode Module. lists the symbols and definitions of the major device parameters for diodes, SCRs, and GTOs. The remainder of this section on ratings and characteristics will be specific to SCRs. However, much of the material is also applicable to diodes and GTOs. Table 1.2 Major of a Typical POW-R-BLOK Module. (Continued) Electrical and Thermal Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions CM421290/CM Units Blocking State Maximums Forward Leakage, Peak I DRM T j = 125 C, V DRM = Rated 15 ma Reverse Leakage, Peak I RRM T j = 125 C, V RRM = Rated 15 ma Conducting State Maximums Peak On-State V FM I FM = 270A, I TM = 270A 1.4 Volts Switching Minimums Critical Rate-of-Rise of Off-State dv/dt T j = 125 C, V D = 2/3 V DRM 500 Volts/ s Thermal Maximums Thermal Resistance, Junction-to-Case R (J-C) Per Module 0.3 C/Watt Thermal Resistance, Case-to-Sink (Lubricated) R (C-S) Per Module 0.2 C/Watt Gate Parameters Maximums Gate - I GT V D = 6V, R L = ma Gate - V GT V D = 6V, R L = Volts Non-Triggering Gate V GDM T j = 125 C, V D = 1/2 V DRM 0.25 Volts xi
3 Symbols and Definitions of Major POW-R-BLOK Parameters Power Semiconductor Devices, General Use R Thermal Resistance Defined when junction power dissipation results in a balanced state of thermal flow.specifies the degree of temperature rise per unit of power, measuring junction temperature from a specified external point. R (J-A) Junction-to-Ambient The steady state thermal resistance between the junction and ambient. Thermal Resistance R (J-C) Junction-to-Case The steady state thermal resistance between the junction and surface of the case. Thermal Resistance R (J-S) Junction-to-Sink The steady state thermal resistance between the junction and the heatsink mounting surface. Thermal Resistance R (C-S) Contact The steady state thermal resistance between the surface of the case and the heatsink Thermal Resistance mounting surface. Z Transient Thermal The change of temperature difference between two specified points or regions at the end of a time interval divided by the step function change in power dissipation at the beginning of the same interval causing the change of temperature difference. Z (J-A) Junction-to-Ambient The transient thermal impedance between the junction and ambient. Transient Thermal Z (J-C) Junction-to-Case The transient thermal impedance between the junction and the surface of the case. Transient Thermal Z (J-S) Junction-to-Sink The transient thermal impedance between the junction and the heatsink mounting surface. Transient Thermal T A Ambient When used in the natural cooling or forced-air cooling it is the temperature of the surrounding Temperature atmosphere of a device which is dependent on geographical location and season, and is not influenced by heat dissipation of the device. T S Sink Temperature The temperature at a specified point on the device heatsink. T C Case Temperature The temperature at a specified point on the device case. T j Junction Temperature The device junction temperature rating.indicates the maximum and minimum allowable operation Rating temperatures. T STG Storage Temperature The device storage temperature (with no electrical connection).indicates the maximum and Rating minimum allowable temperatures. Mounting Torque The maximum allowable torque specification for mounting a device to a heatsink with the Mounting Screw specified mounting screw. Mounting Torque The maximum allowable torque specification for tightening the specified electrical terminal screws. Terminal Screw SCR Modules V RRM Peak Reverse Within the rated junction temperature range, and when there is no signal between the gate and cathode, specifies the repetitive peak reverse anode to cathode voltage applicable on each cycle. V RSM Transient Peak Reverse Within the rated junction temperature range, and when there is no signal between the gate and cathode, specifies the non-repetitive peak reverse anode to cathode voltage applicable for time width equivalent to less than 5ms. V R(DC) DCReverse Blocking Within the rated junction temperature range, and when there is no signal between the gate and cathode, specifies the maximum value for DC anore to cathode voltage applicable in the reverse direction. xii
4 SCR Modules (continued) V DRM Peak Forward Within the rated junction temperature range, and when there is no signal between the gate and cathode, specifies the repetitive peak off-state anode to cathode voltage applicable for each cycle. Includes the maximum instantaneous value for repetitive off-state voltage, but excludes non-repetitive transient off-state voltage. V DSM Transient Peak Forward Within the rated junction temperature range and when there is no signal between the gate and cathode, specifies the peak non-repetitive off-state anode to cathode voltage applicable for a time width equivalent to less than 5ms.Indicates the maximum instantaneous value for non-repetitive transient off-state voltage. V D(DC) DC Forward Within the rated junction temperature range and when there is no signal between the gate and cathode, specifies maximum value for DC anode to cathode voltage applicable in the forward direction. dv/dt Critical Rate-of-Rise At maximum rated junction temperature, and when there is no signal between the gate and cathode, of Off-State specifies the maximum rate-of-rise of off-state voltage that will not drive the device from an off-state when an exponential off-state voltage of specified amplitude is applied to the device. dv = 0.632V D V D :Specified Off-State dt r r:time constant for exponential waveform V TM Peak On-State At specified junction temperature, and when on-state current (commercial frequency, half sine wave of specified peak amplitude) is applied to the device, indicates peak-value for the resulting voltage drop. I T(RMS) RMS On-State At specified case temperature, indicates the RMS value for on-state current that can be continuously applied to the device. I T(AV) Average On-State At specified case temperature, and with the device connected to a resistive or inductive load, indicates the average value for forward-current (sine half wave, commercial frequency) that can be continuously applied to the device. I TSM Peak On-State Within the rated junction temperature range, indicates the peak-value for non-repetitive on-state current (sine half wave, commercial frequency).this value indicated for one cycle, or as a function of a number of cycles. I2t -Squared Time The maximum, on-state, non-repetitive short time-thermal capacity of the device and is helpful in selecting a fuse or providing a coordinated protection scheme of the device in the equipment.this rating is intended specifically for operation less than one half cycle of a 180 (degree) conduction angle sinusoidal wave form. NOTE: The off-state blocking capability cannot be guaranteed at values near the maximum I2t. di/dt Critical Rate-of-Rise At specified case (or point) temperature, specified off-state voltage, specified gate conditions, and at of On-State a frequency of less than 60Hz, indicates the maximum rate-of-rise of on-state current which the thyristor will withstand after switching from an off-state to an on-state, when using recommended gate drive. I RRM Reverse Leakage At maximum rated junction temperature, indicates the peak-value for reverse-current flow when a, Peak voltage (sine half wave, commercial frequency, and having a peak value as specified for repetitive peak reverse-voltage rating) is applied in a reverse direction to the device. I DRM Forward Leakage At maximum rated junction temperature, indicates the peak-value for off-state-current flow when a, Peak voltage (sine half wave, commercial frequency, and having a peak value for repetitive off-state voltage rating) is applied in a forward direction to the device. P GM Peak Gate Power Within the rated junction temperature range, indicates the peak-value for maximum allowable power Dissipation dissipation over a specified time period, when the device is in forward conduction between the gate and cathode. P G(AV) Average Gate Power Within the rated junction temperature range, indicates the average value for maximum allowable Dissipation power dissipation when the device is forward-conducting between the gate and cathode. xiii
5 SCR Modules (continued) I GFM Peak Forward Gate Within the rated junction temperature range, indicates the peak-value for forward-current flow between the gate and cathode. V GRM Peak Reverse Gate Within the rated junction temperature range, indicates the peak-value for reverse-voltage V GFM Peak Forward Gate Within the rated junction temperature range, indicates the peak-value for forward-voltage I GT Gate - At a junction temperature of 25 C, and with a specified off-voltage, and a specified load resistance, indicates the minimum gate DC current required to switch the thyristor from an off-state to an on-state. V GT Gate - At a junction temperature of 25 C, and with a specified off-state voltage, and a specified load resistance, indicates the minimum gate DC voltage required to switch the thyristor from an off-state to an on-state. V GDM Non-Triggering Gate At maximum rated junction temperature, and with a specified off-state voltage applied to the device, indicates the maximum gate DC voltage which will not switch the device from an off-state to an on-state. t on Turn-On Time At specified junction temperature, and with a peak repetitive off-state voltage of half rated value, followed by device turn-on using specified gate-current, when specified on-state current of specified di/dt flows, indicated as the time required for the applied off-state voltage to drop to 10% of its initial value after gate current application. Delay time is the term used to define the time required for applied voltage to drop to 90% of its initial value following gate-current application, and the time required for level to drop from 90% to 10% is referred to as rise time.the sum of both these defines turn-on time. t q Turn-Off Time Specified at maximum rated junction temperature.device set up to conduct on-state current, followed by application of specified reverse-voltage to quench on-state current, and then increasing t q voltage at a specified rate-of-rise as determined by circuit conditions controlling the point where specified off-state voltage is reached.turn-off time defines the minimum time which the device will Time hold its off-state, starting from the point on-state current reached zero, and after forward voltage is again applied. Diode Modules V RRM Peak Reverse Within the rated junction temperature range, specifies the repetitive peak reverse voltage applicable for each cycle.includes the maximum instantaneous value for repetitive transient reverse voltage, but excludes non-repetitive transient reverse-voltage. V RSM Transient Peak Reverse Within the rated junction temperature range, specifies the non-repetitive peak reverse voltage applicable for a time width equivalent to less than 5ms.Indicates the maximum instantaneous value for non-repetitive transient voltage. V R(DC) DC Reverse The maximum value for DC voltage applicable in the reverse direction, specified within the rated junction temperature range. V FM Peak On-State At specified junction temperature, and when forward-current (commercial frequency, sine wave of specified peak amplitude) is applied to the device, indicates peak-value for the resulting voltage drop. I F(RMS) RMS On-State At specified case temperature, indicates the RMS value for forward-current that can be continuously applied to the device. I F(AV) Average On-State At specified case temperature, and with the device connected to a resistive or inductive load, indicates the average value for forward-current (sine half wave, commercial frequency) that can be continuously applied to the device. I FSM Peak Surge On-State Within the rated junction temperature range, indicates the peak-value for non-repetitive forward-current (sine half wave, commercial frequency), this value is defined at one cycle or as a function of a number of cycles. xiv
6 Diode Modules (continued) I2t -Squared Time The maximum, on-state, non-repetitive short time-thermal capacity of the device and is helpful in selecting a fuse or providing a coordinated protection scheme of the device in the equipment.this rating is intended specifically for operation less than one half cycle of a 180 (degree) conduction angle sinusoidal wave form. NOTE: The off-state blocking capability cannot be guaranteed at values near the maximum I2t. I RRM Reverse Leakage At maximum rated junction temperature, indicates the peak-value for reverse-current flow when a, Peak voltage (sine half wave, commercial frequency, and having a peak value as specified for repetitive peak reverse-voltage rating) is applied in a reverse direction to the device. Q rr Reverse Recovery Indicates the total amount of reverse recovery charge.specified at a certain junction temperature, Charge and current which has decreased at a specified rate of decrease, from the forward state to reverse after a certain forward current was applied. GTO Modules V RRM Peak Reverse Within the rated junction temperature range, and when there is no signal between the gate and cathode, specifies the peak repetitive reverse-voltage applicable on each cycle. V RSM Transient Peak Reverse Within the rated junction temperature range, and when there is no signal between the gate and cathode, specifies the peak non-repetitive peak reverse voltage applicable for a time width equivalent to less than 5ms. V DRM Peak Forward Within the rated junction temperature range, and when there is a specified reverse voltage between the gate and cathode, specifies the peak repetitive off-state voltage applicable for each cycle. Includes the maximum instantaneous value for repetitive transient off-state voltage, but excludes non-repetitive off-state voltage. V DSM Transient Peak Forward Within the rated junction temperature range, and when there is a specified reverse voltage between the gate and cathode, specifies the peak non-repetitive off-state voltage applicable for a time width equivalent to less than 5ms.Indicates the maximum instantaneous value for non-repetitive transient off-state voltage. V D(DC) DCForward Within the rated junction temperature range, and when there is a specified reverse voltage between the gate and cathode, specifies maximum value for DC voltage applicable in the forward direction. dv/dt Critical Rate-of-Rise At maximum rated junction temperature, and when there is a specified reverse voltage between the of Off-State gate and cathode, specifies the maximum rate-of-rise of off-state voltage that will not drive the device from an off-state to an on-state when an exponential off-state voltage of specified amplitude is applied to the device. dv = 0.632V D V D :Specified Off-State dt r r:time constant for exponential waveform V TM Peak On-State At specified junction temperature, and when on-state current (commercial frequency, half sine wave of specified peak amplitude) is applied to the device, indicates peak-value for the resulting voltage drop. I T(RMS) RMS On-State At specified case temperature, indicates the RMS value for on-state current that can be continuously applied to the device. I T(AV) Average On-State At specified case temperature, and with the device connected to a resistive or inductive load, indicates the average value for forward-current (sine half wave, commercial frequency) that can be continuously applied to the device. I TSM Peak Surge On-State Within the rated junction temperature range, indicates the peak-value for non-repetitive on-state current (sine half wave, commercial frequency).this value indicated for one cycle, or as a function of a number of cycles. xv
7 GTO Modules (continued) I2t -Squared Time The maximum, on-state, non-repetitive short time-thermal capacity of the device and is helpful in selecting a fuse or providing a coordinated protection scheme of the device in the equipment.this rating is intended specifically for operation less than one half cycle of a 180 (degree) conduction angle sinusoidal wave form. NOTE: The off-state blocking capability cannot be guaranteed at values near the maximum I2t. di/dt Critical Rate-of-Rise At specified case (or point) temperature, specified off-state voltage, specified gate conditions, and at of On-State a frequency of less than 60Hz, indicates the maximum rate-of-rise of on-state current which the GTO will withstand after switching from an off-state to an on-state, when using recommended gate drive. I RRM Reverse Leakage At maximum rated junction temperature, indicates the peak-value for reverse-current flow when a, Peak voltage (a half sine wave, commercial frequency, and having a peak value as specified for repetitive peak reverse-voltage rating) is applied in a reverse direction to the device. I DRM Forward Leakage At maximum rated junction temperature, indicates the peak-value for off-state-current flow when a, Peak voltage (sine half wave, commercial frequency, and having a peak value as specified for repetitive off-state voltage rating) is applied in a forward direction to the device. Tested with a specified reverse voltage between the gate and cathode. P GFM Peak Gate Forward Within the rated junction temperature range, indicates the peak-value for maximum allowable power dissipation over a specified time period, when the device is forward conducting between the gate and cathode. P G(AV) Average Gate Forward Within the rated junction temperature range, indicates the average value for maximum allowable power dissipation when the device is forward-conducting between the gate and cathode. I GFM Peak Forward Gate Within the rated junction temperature range, indicates the peak-value for forward-current flow between the gate and cathode. V GRM Peak Reverse Gate Within the rated junction temperature range, indicates the peak-value for reverse-voltage V GFM Peak Forward Gate Within the rated junction temperature range, indicates the peak-value for forward-voltage I GT Gate - At a junction temperature of 25 C, and with a specified off-voltage, and a specified load resistance, indicates the minimum gate DC current required to switch the GTO from an off-state to an on-state. V GT Gate - At a junction temperature of 25 C, and with a specified off-state voltage, and a specified load resistance, indicates the minimum gate DC voltage required to switch the GTO from an off-state to an on-state. P GRM Peak Gate Reverse Within the rated junction temperature range, indicates the peak-value for maximum allowable power dissipation in the reverse direction between the gate and cathode, over a specified time period. P GR(AV) Average Gate Reverse Within the rated junction temperature range, indicates the average value for maximum allowable power dissipation in the reverse direction between the gate and cathode. I GRM Peak Reverse Within the rated junction temperature range, indicates peak-value for reverse-current that can be Gate conducted between the gate and cathode. I TGQ Gate Controlled Under specified conditions, indicates the instantaneous value for on-current usable in gate control, Turn-off specified immediately prior to device turn-off. t gt Turn-On Time When applying forward-current to the gate, indicates the time required to switch the GTO from an off-state to an on-state. t gq Turn-Off Time When applying reverse-current to the gate, indicates the time required to switch the GTO from an on-state to an off-state. xvi
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Value Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
ST180S SERIES 200A. Stud Version PHASE CONTROL THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics
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70HF(R) SERIES 70 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics
70HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available 70 A Types
Phase Control Thyristors (Stud Version), 330 A
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MT..KB SERIES 50 A 90 A 100 A. Power Modules THREE PHASE AC SWITCH. Features. Description. Major Ratings and Characteristics. Bulletin I /97
MT..KB SERIES THREE PHASE AC SWITCH Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case
Phase Control Thyristors (Hockey-PUK Version), 2310 A
Phase Control Thyristors (Hockey-PUK Version), 2310 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization:
Phase Control Thyristors (Hockey PUK Version), 1350 A
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Date:- 03 August 2012 Data Sheet Issue:- K1 Phase Control Thyristor Types N0180SH120 to N0180SH160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage,
301U(R) SERIES 300A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics
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POW-R-BLOK TM Single Diode Isolated Module 600 Amperes / Up to 2400 Volts. LS41 60 Single Diode POW-R-BLOK TM Module 600 Amperes / Volts
LS41 6 6 mperes / Up to 24 Volts CONNECTION DIGRM OUTLINE DRWING D G H E B J "P" "Q" M N Description: Powerex Single Diode Modules are designed for use in applications requiring rectification and isolated
R L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.
S602ECS RoHS Description This new.8 A sensitive gate SCR in an TO-92 package with a GAK pin out, offers a high static component series with a high static dv/dt and a low turn off (t q ) time by the use
Lecture Switching Characteristics (Dynamic characteristics) Fig. 3.7 : Turn - on characteristics
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IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK V T I TSM V RRM. 800 to 1600V < 16A = 300A. Bulletin I2135 rev.
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MCR218-2G, MCR218-4G, MCR218-6G
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Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV) Average on-state current T C
Sxx40x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)
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PD POW-R-BLOK TM Dual Diode Isolated Module 1000 Amperes / Up to 4000 Volts
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VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series High Voltage Phase Control Thyristor, 70 A
High Voltage Phase Control Thyristor, 70 A Super TO-247 PRODUCT SUMMARY 2 (A) 1 (K) (G) 3 Package Super TO-247 Diode variation Single SCR I T(AV) 70 A V DRM /V RRM 1200 V, 1600 V V TM 1.4 V I GT 100 ma
SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8.
SD33N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series.5 µs recovery time High voltage ratings up to 5V High current capability Optimized turn on and turn off characteristics
The Gate Turn-Off Thyristors (GTO) Part 2
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Distributed Gate Thyristor Type R1280NC21x to R1280NC25x
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SERIES IRK.136,.142,.162
Bulletin I277 rev. C 3/2 THYRISTOR/DIODE and THYRISTOR/THYRISTOR SERIES IRK.36,.42,.62 NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic ( Al 2 O 3 ) 35 V RMS Isolating
Thyristor High Voltage, Phase Control SCR, 40 A
S-40TPS2LHM3, S-40TPS2ALHM3 Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) Low I GT parts available AEC-Q0 qualified meets JESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible
Teccor brand Thyristors 40 Amp Low T q SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV)
RoHS Description The S4040xQx series of s offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse circuits. These
QRD Preliminary. High Voltage Diode Module 200 Amperes/3300 Volts
QRD3324 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com High Voltage Diode Module 2 Amperes/33 Volts L NUTS (3TYP) F A D F C J 7 8 B E H 1 2 3 4
High Voltage, Input Rectifier Diode, 20 A
VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series High Voltage, Input Rectifier Diode, 2 A FEATURES Very low forward voltage drop 2 TO-22 FULL-PAK 3 Cathode 2 3 Anode C max. operating junction temperature Designed
Teccor brand Thyristors Silicon Controlled Rectifiers
Sx02xS EV Series Amp Sensitive SCR Description New Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR s junctions are
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Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) AEC-Q0 qualified meets ESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible solution for reliable AC power rectification Easy control
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
Phase Control Thyristors (Stud Version), 110 A
Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY I T(AV) 110 A V DRM /V RRM 400 V, 1600 V V TM 1.52 V I GT 150 ma T J -40 C to 140 C Package TO-209AC (TO-94) Diode variation
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
VSVSK.36..PbF, VSVSK.42..PbF, VSVSK.62..PbF Series Thyristor/Diode and Thyristor/Thyristor, 35 A to 6 A (New INTAPAK Power Modules) PRODUCT SUMMARY I T(AV) 35 A to 6 A Type Modules Thyristor, Standard
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Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive
SCR / SCR and SCR / Diode (MAGN-A-PAK Power Modules), 230 A
VSVSK.23..PbF Series SCR / SCR and SCR / Diode (MAGNAPAK Power Modules), 23 A PRODUCT SUMMARY I T(AV) 23 A Type Modules thyristor, standard Package MAGNAPAK Circuit configuration MAGNAPAK Two SCRs doubler
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
85HF(R) SERIES 85 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics
85HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Stud cathode and stud anode version Leaded version available 85 A Types up to 1600V V RRM Typical Applications
Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21)
Date:- 4 Mar, 2003 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive
Phase Control SCR, 70 A
Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 2 (A) DESCRIPTION/FEATURES The 70TPS..PbF High oltage Series of silicon controlled rectifiers are specifically designed for
WESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14)
An IXYS Company Date:- 14 Oct, 2004 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
PS POW-R-BLOK TM Single Diode Isolated Module 2500 Amperes / Up to 2400 Volts
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Inverter Grade Thyristors (Stud Version), 300 A
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MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAK TM Power Modules), 500 A
Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor FEATURES High current capability High surge capability Industrial standard package 3 V RMS isolating voltage with non-toxic substrate
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light,
Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A
Thyristor/Thyristor (MAGN-A-PAK Power Modules), 32 A MAGN-A-PAK PRIMARY CHARACTERISTICS I T(A) 32 A Type Modules - thyristor, standard Package MAGN-A-PAK FEATURES High voltage Electrically isolated base
QJxx16xHx Series. Thyristors 16 Amp High Temperature Alternistor Triacs. RoHS. Description
RoHS Description This 16A high temperature alternistor triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
Two Separated Thyristor Module, 100A ( Low Profile Package ) 14, 15 I T(AV) CHARACTERISTICS to to 150
NKTA Series Two Separated Thyristor Module, A ( Low Profile Package ) FEATURES High voltage RMS isolating voltage High surge capability Planar SCR chips Heat transfer and isolation through direct copper
PS POW-R-BLOK TM Single Diode Isolated Module 2500 Amperes / Up to 2400 Volts
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300HF(R) SERIES ELECTROSÓN 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2021/A. case style DO-205AB (DO-9)
Bulletin I2021/A 300HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features 300A High current carrying capability High surge current capability Types up to 1200V V RRM Stud cathode and stud anode version
Medium Voltage Thyristor Types K2359TD600 to K2359TD650 Old Type No.: P1063DH60-65
WESTCODE An IXYS Company Date:- 2 Aug, 22 Data Sheet Issue:- 1 Medium Voltage Thyristor Types K2359TD6 to K2359TD65 Old Type No.: P163DH6-65 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
Surface Mountable Phase Control SCR, 16 A
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Thyristor High Voltage, Phase Control SCR, 50 A
S-TPS2LHM3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, A 2 (A) FEATURES AEC-Q qualified, meets JESD 20 class A whisker test Flexible solution for reliable AC power rectification 2 3
Medium Power Phase Control Thyristors (Stud Version), 50 A
Medium Power Phase Control Thyristors (Stud Version), 50 A VS- TO-208AC (TO-65) PRODUCT SUMMARY Package TO-208AC (TO-65) Diode variation Single SCR I T(AV) 50 A V DRM /V RRM V to 1200 V V TM 1.60 V I GT
95PF(R)...(W) SERIES 95 A STANDARD RECOVERY DIODES GEN II DO5. Stud Version. Features. Typical Applications. Major Ratings and Characteristics
95PF(R)...(W) SERIES STANDARD RECOVERY DIODES GEN II DO5 Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version
Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 17H5200 Unit Max. surge peak forward and reverse blocking voltage
V DRM = 5200 V Phase Control hyristor I (AV)M = 1975 A I (RMS) = 3100 A I SM = 34 10 3 A V 0 = 1.02 V r = 0.32 mw 5SP 17H5200 Doc. No. 5SYA1049-06 Nov. 13 Patented free-floating silicon technology Low
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
Thyristors 55 Amp Standard SCRs. Symbol Parameter Test Conditions Value Unit Repetitive Peak off-state/reverse Voltage 1600 V V DSM
RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at
Thyristor/Thyristor, 150 A (INT-A-PAK Power Module)
S-/4PbF Thyristor/Thyristor, 5 A (INT-A-PAK Power Module) INT-A-PAK PRIMARY CHARACTERISTICS I T(A) 5 A Type Modules - thyristor, standard Package INT-A-PAK FEATURES Electrically isolated by DBC ceramic
Sensitive Triacs. ( Amps) Features
Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-22AB TO-22AB G Sensitive Triacs (.8 8. ) 11 General Description Teccor's line of sensitive gate triacs includes devices with current