C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
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1 C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Sensitive Gate Triggering PbFree Packages are Available* SCRs 4 A RMS, Volts A G K TO225AA CASE 077 STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 1. Cathode 2. Anode 3. Gate YWW C6xxG Y WW C6xx xx G = Year = Work Week = Device Code = B, D, D1, M, M1 = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2005 August, 2005 Rev. 8 1 Publication Order Number: C6/D
2 C6 Series MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Characteristic Symbol Max Unit Peak Repetitive OffState Voltage (Note 1) (Sine Wave, 5060 Hz, R GK = 1 k, T C = 40 to 1 C) V DRM, V RRM V On-State RMS Current (180 Conduction Angles, T C = 80 C) Average OnState Current (180 Conduction Angles, T C = 80 C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, T J = +1 C) C6B C6D, C6D1* C6M, C6M1* I T(RMS) 4.0 A I T(AV) 2.55 A I TSM 20 A Circuit Fusing Considerations (t = 8.3 ms) I 2 t 1.65 A 2 s Forward Peak Gate Power (Pulse Width 1.0 sec, T C = 80 C) Forward Average Gate Power (Pulse Width 1.0 sec, T C = 80 C) Forward Peak Gate Current (Pulse Width 1.0 sec, T C = 80 C) P GM 0.5 W P G(AV) 0.1 W I GM 0.2 A Operating Range T J 40 to +1 C Storage Temperature Range T stg 40 to +150 C Mounting Torque (Note 2) 6.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. THERMAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 3.0 C/W Thermal Resistance, JunctiontoAmbient R JA 75 C/W Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for Seconds T L 260 C ORDERING INFORMATION Device Package Shipping C6B TO225AA C6BG TO225AA (PbFree) C6D TO225AA C6DG TO225AA (PbFree) C6D1* TO225AA C6D1G* TO225AA (PbFree) C6M TO225AA C6MG TO225AA (PbFree) C6M1* TO225AA C6M1G* TO225AA (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix. 2
3 C6 Series ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM, R GK = 00 Ohms) T J = 25 C T J = 1 C ON CHARACTERISTICS Peak Forward OnState Voltage (Note 3) (I TM = 4 A) Gate Trigger Current (Continuous dc) (Note 4) (V AK = 6 Vdc, R L = 0 Ohms) T J = 25 C T J = 40 C I DRM, I RRM 0 A A V TM 2.2 V Peak Reverse Gate Voltage (I GR = A) V GRM 6.0 V Gate Trigger Voltage (Continuous dc) (Note 4) (V AK = 6 Vdc, R L = 0 Ohms) T J = 25 C T J = 40 C Gate NonTrigger Voltage (Continuous dc) (Note 4) (V AK = 12 V, R L = 0 Ohms, T J = 1 C) Latching Current (V AK = 12 V, I G = 20 ma) T J = 25 C T J = 40 C Holding Current (V D = 12 Vdc) (Initiating Current = 20 ma, Gate Open) T J = 25 C T J = 40 C T J = +1 C DYNAMIC CHARACTERISTICS Critical RateofRise of OffState Voltage (V AK = Rated V DRM, Exponential Waveform, R GK = 00 Ohms, T J = 1 C) 3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 4. R GK is not included in measurement. I GT V GT V GD 0.2 V I L I H A V ma ma dv/dt 8.0 V/ s Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode 3
4 C6 Series T C, CASE TEMPERATURE ( C) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz I T(AV) AVERAGE ON-STATE CURRENT (AMPERES) DC Figure 1. Average Current Derating P (AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. JUNCTION TEMPERATURE 1 C I T(AV) AVERAGE ON-STATE CURRENT (AMPERES) Figure 2. Maximum OnState Power Dissipation DC 0 00 I GT, GATE TRIGGER CURRENT ( A) I H, HOLDING CURRENT ( A) Figure 3. Typical Gate Trigger Current versus Figure 4. Typical Holding Current versus , GATE TRIGGER VOLTAGE (V) I L, LATCHING CURRENT ( A) 0 VGT Figure 5. Typical Gate Trigger Voltage versus Figure 6. Typical Latching Current versus 4
5 C6 Series PACKAGE INTERCHANGEABILITY The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-6 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility DIA TYP BSC ON Semiconductor C-6 Package Competitive C-6 Package 5
6 C6 Series PACKAGE DIMENSIONS TO225 CASE 7709 ISSUE Z H Q B U F A K V G S D 2 PL M C J R 0.25 (0.0) M A M B M 0.25 (0.0) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH THRU 08 OBSOLETE, NEW STANDARD INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. C6/D
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
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Silicon Controlled Rectifiers
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
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Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
NCV1009ZG. 2.5 Volt Reference
V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
MMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZVT Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
NSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
J39, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTP75N03L09, NTB75N03L09. Power MOSFET 75 Amps, 30 Volts. N Channel TO 220 and D 2 PAK. 75 AMPERES, 30 VOLTS R DS(on) = 8 m
NTP75NL9, NTB75NL9 Power MOSFET 75 Amps, Volts NChannel TO and D PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MMT05B350T3G. Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
NTGS3443T1. Power MOSFET 2 Amps, 20 Volts. P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m
NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power Management
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers
MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,