POW-R-BLOK TM Dual SCR Isolated Module 500 Amperes / Up to 1600 Volts. LD43 50 Dual SCR POW-R-BLOK TM Module 500 Amperes / Volts
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1 mperes / Up to 16 Volts R OUTLINE DRWING B C J F 1 3 L H Q - DI. (4 TYP.) P - M1 THD (3 TYP.) T - (4 TYP.) S E K M G D LD43 5 Dual SCR Module mperes / 8-16 Volts LD43 Outline Dimensions Dimension Inches Millimeters Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. has been tested and recognized by the Underwriters Laboratories. Features: TElectrically Isolated Heatsinking Tluminum Nitride Isolator T Compression Bonded Elements T Metal Baseplate T Low Thermal Impedance for Improved Current Capability T UL Recognized Ordering Information: Select the complete eight-digit module part number from the table below. Example: LD43165 is a 16V, mpere Dual SCR Isolated Module. Type 3 CONNECTION DIGRM Voltage Volts (x1) N 1 Current mperes (x1) B C D E.5 5. F G H J K L M N P M1 Metric M1 Q.6 Dia. 6.5 Dia. R.4 6. S.1 3. T.11 x.3.5 x.8 Note: Dimensions are for reference only. Benefits: TNo dditional Insulation Components Required TEasy Installation TNo Clamping Components Required T Reduce Engineering Time pplications: TBridge Circuits TC & DC Motor Drives TBattery Supplies TPower Supplies TLarge IGBT Circuit Front Ends LD
2 mperes / Up to 16 Volts bsolute Maximum Ratings Characteristics Conditions Symbol Units Repetitive Peak Forward and Reverse Blocking Voltage V DRM & V RRM up to 16 V Non-Repetitive Peak Blocking Voltage V RSM V RRM + 1 V (t < 5 msec) RMS Forward Current I T(RMS) 9 verage Forward Current 18 Conduction, T C=86 C I T(V) Peak One Cycle Surge Current, Non-Repetitive 6 Hz, 1% V RRM reapplied 5 Hz, 1% V RRM reapplied I TSM I TSM 17, 16,3 Peak Three Cycle Surge Current, Non-Repetitive 6 Hz, 1%V RRM reapplied I TSM 1,5 Peak Ten Cycle Surge Current, Non-Repetitive 6 Hz, 1% V RRM reapplied I TSM 1, I t for Fusing for One Cycle 8.3 milliseconds I t 1. x 1 6 sec 1 milliseconds I t 1.33 x 1 6 sec Maximum Rate-of-Rise of On-State Current, Per JEDEC Standard di/dt /µs (Repetitive) Operating Temperature T J -4 to +13 C Storage Temperature T stg -4 to +15 C Max. Mounting Torque, M6 Mounting Screw 55 6 in. Lb. Nm Max. Mounting Torque, M1 Terminal Screw 11 1 in. Lb. Nm Module Weight, Typical 1 g 3.3 lb V 5C V rms 3 V
3 mperes / Up to 16 Volts Electrical Characteristics, T J =5 C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Repetitive Peak Forward Leakage Current I DRM Up to 16V, T J=13 C 8 m Repetitive Peak Reverse Leakage Current I RRM Up to 16V, T J=13 C 8 m Peak On-State Voltage V FM I TM=1 1.3 V Threshold Voltage, Low-level Slope Resistance, Low-level Threshold Voltage, High-level Slope Resistance, High-level V TM Coefficients, Full Range V (TO)1 r T1 V (TO) r T T J = 13 C, I = 15%I T(V) to πi T(V).81.3 T J = 13 C, I = πi T(V) to I TSM.9.6 T J = 13 C, I = 1 to 6k V TM = + B Ln I +C I + D Sqrt I Minimum dv/dt dv/dt Exponential to V DRM T j=13 C, Gate Open = B = C = D = E- 8.1E E- V mω V mω 1 Typ. V/µs Gate Trigger Current I GT T j=5 C, V D=1V m Gate Trigger Voltage V GT T j=5 C, V D=1V 3. Volts Non-Triggering Gate Voltage V GDM T j=13 C, V D= ½ V DRM.5 Volts Peak Forward Gate Current I GTM 4. mp Peak Reverse Gate Voltage V GRM 5 Volts Thermal Characteristics Characteristics Symbol Max. Units Thermal Resistance, Junction to Case R ΘJ-C Per Module, both conducting Per Junction, both conducting Thermal Impedance Coefficients Z ΘJ-C Z ΘJ-C = K 1 (1-exp(-t/τ 1)) + K (1-exp(-t/τ )) + K 3 (1-exp(-t/τ 3)) + K 4 (1-exp(-t/τ 4)) K 1 = 8.3E-4 K = 1.3E- K 3 = 1.64E- K 4 = 3.75E- τ 1 = 3.39E-4 τ = 3.15E-3 τ 3 =.16 τ 4 =.66 Thermal Resistance, Case to Sink Lubricated R ΘC-S Per Module.1 C/W C/W C/W
4 mperes / Up to 16 Volts Maximum On-State Forward Voltage Drop ( Tj = 13 C ) Maximum Transient Thermal Impedance (Junction to Case) On-State Voltage - Vtm - Volts Thermal Impedance - Zjc - C/W Instantaneous On-State Current - Itm - mperes Time - t - Seconds 7 Maximum On-State Power Dissipation (Sinusoidal Waveform) 13 Maximum llowable Case Temperature (Sinusoidal Waveform) Max. Power Dissipation Per SCR - Watts Max. Case Temperature - Tcase - C_ Max. Power Dissipation Per SCR - Watts Maximum On-State Power Dissipation 3 (Rectangular Waveform) Max. Case Temperature - Tcase - C Maximum llowable Case Temperature 3 (Rectangular Waveform) C
5 mperes / Up to 16 Volts Powerex LD43--5 Pow-R-Blok 6-Pulse Bridge Total Power Dissipation vs Maximum Rated Output Current Rth S- (C/W) Total Power Dissipation (W) Total Power Dissipation (W) mbient Temperature (C) Maximum Bridge Output Current () Six-Pulse Bridge Circuit Total Power Dissipation & Maximum Rated Output Current With Sink to mbient Resistance of Heatsink as a Parameter.
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More informationR L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.
S602ECS RoHS Description This new.8 A sensitive gate SCR in an TO-92 package with a GAK pin out, offers a high static component series with a high static dv/dt and a low turn off (t q ) time by the use
More informationMCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
More informationDescription. Features. As low as 8mA max holding current. UL Recognized TO- 220AB package. 110 C rated junction temperature
Q6012xH1LED Series RoHS Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac series
More informationMCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
More informationThyristors 25 Amp Standard & Alternistor (High Commutation) Triacs. Qxx25xx & Qxx25xHx Series. Description
Qxx25xx & Qxx25xHx Series RoHS escription This 25 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,
More informationMAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
More informationMedium Power Phase Control Thyristors (Stud Version), 16 A
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S-/4PbF Thyristor/Thyristor, 5 A (INT-A-PAK Power Module) INT-A-PAK PRIMARY CHARACTERISTICS I T(A) 5 A Type Modules - thyristor, standard Package INT-A-PAK FEATURES Electrically isolated by DBC ceramic
More informationAPPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.
TMR-M,-H TMR-M,-H PPLICTION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRWING & CIRCUIT DIGRM 1 4.6 K1 K
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RoHS Description This SJxx4x high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge
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301U(R) SERIES STANDARD RECOVERY DIODES Stud Version Features Wide current range High voltage ratings up to 2500V High surge current capabilities Stud cathode and stud anode version High resistance to
More informationC122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
More informationTwo Separated Thyristor Module, 100A ( Low Profile Package ) 14, 15 I T(AV) CHARACTERISTICS to to 150
NKTA Series Two Separated Thyristor Module, A ( Low Profile Package ) FEATURES High voltage RMS isolating voltage High surge capability Planar SCR chips Heat transfer and isolation through direct copper
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More informationMCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
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More information2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
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More informationDCR780G42. Phase Control Thyristor Preliminary Information KEY PARAMETERS FEATURES 4200V 780A 10500A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION
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More informationFeatures. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
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MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
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