QRD Preliminary. High Voltage Diode Module 200 Amperes/3300 Volts

Transcription

1 QRD3324 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (724) High Voltage Diode Module 2 Amperes/33 Volts L NUTS (3TYP) F A D F C J 7 8 B E H N (4TYP) G (3TYP) M (SCREWING DEPTH - 3 TYP) K Description: High voltage diodes feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A H B J.2 5. C K D 4.88± ±.25 L M5 Metric M5 E 2.24±.1 57.±.25 M.63 Min. 16. Min. F N.28 Dia. 7. Dia. G Features: Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Copper Baseplate Fast Recovery Time (1.2 μs max.) Industry Standard Packages Allow Common Bus Work to Complementary High Isolation Diodes No Additional Insulation Components Required UL Recognized (E7824) Applications: Diodes for Pulse Front End Rectifiers in 1.2 KV Isolation High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction 1

2 QRD Amperes/33 Volts Maximum Ratings, T j = 25 C unless otherwise specified Ratings Symbol QRD3324 Units Repetitive Peak Reverse Blocking Voltage V RRM 33 Volts Non-Repetitive Peak Reverse Blocking Voltage V RSM V RRM + 1 Volts DC Current Resistive Load, T C = 8 C I F(DC) 26 Amperes Resistive Load, T C = 1 C I F(DC) 2 Amperes Peak Half Cycle Non-Repetitive Surge Current (t = 8.3mS, 1% V RRM Reapplied) I FSM 19 Amperes I 2 t for Fusing for One Cycle (t = 8.3mS, 1% V RRM Reapplied) I 2 t 15 ka 2 sec Junction Temperature T j -5 to +15 C Operating Temperature T op -5 to +15 C Storage Temperature T stg -55 to +15 C Maximum Mounting Torque, M6 Mounting Screw 44 in-lb Maximum Mounting Torque, M5 Terminal Screw 35 in-lb Module Weight (Typical) 8 Grams Partial Discharge Q pd 1 pc (V1 = 35 V RMS, V2 = 26 V RMS, f = 6Hz (Acc. to IEC 1287)) V Isolation (6 Hz, Circuit to Base, All Terminals Shorted, t = 6 sec.) V RMS 6 Volts 2

3 QRD Amperes/33 Volts Electrical Characteristics, T j = 25 C unless otherwise specified CharacteristicsSymbol Test Conditions Min. Typ. Max. Units Peak Reverse Leakage Current I RRM Rated V RRM 5 ma Peak On-State Voltage V FM I F = 2A, T j = 25 C Volts I F = 2A, T j = 125 C 2.45 Volts I F = 2A, T j = 15 C 2.55 Volts Reverse Recovery Time t rr T j = 25 C.5 µs T j = 125 C.7 µs T j = 15 C.8 µs Reverse Recovery Current I rr T j = 25 C 125 Amperes V CC = 18V, T j = 125 C 15 Amperes I F = 165A, T j = 15 C 155 Amperes Reverse Recovery Charge Q rr V GE = ±15V, T j = 25 C 15 µc R G(on) = 15Ω, T j = 125 C 17 µc L s = 1nH, T j = 15 C 2 µc Reverse Recovery Energy *1 E rec(1%) Inductive Load T j = 25 C 15 mj (See Fig.1, Fig. 2) T j = 125 C 175 mj T j = 15 C 2 mj Reverse Recovery Energy *2 E rec T j = 25 C 12 mj T j = 125 C 2 mj T j = 15 C 23 mj Stray Inductance L SAK 6 nh Lead Resistance Terminal-Chip R AK T C = 25 C.8 mω Thermal and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case *3 R th(j-c) Per Diode.96 C/W Thermal Resistance, Case to Sink Lubricated *3 R th(c-s) Thermal Grease Applied.18 C/W Per Module *4 Comparative Tracking Index CTI 6 Clearance Distance in Air (Terminal to Base) d a(t-b) 31. mm Creepage Distance Along Surface d s(t-b) 35. mm (Terminal to Base) Clearance Distance in Air d a(t-t) 19 mm (Terminal to Terminal) Creepage Distance Along Surface d s(t-t) 54 mm (Terminal to Terminal) *1 E rec(1%) is the integral of.1v R x.1i F x dt. *2 Definition of all items according to IEC 6747, unless otherwise stated. *3 T C measured point is just under the chip. *4 Typical value is measured by using thermally conductive grease of λ = 1. [W/(m K)]. 3

4 QRD Amperes/33 Volts Test Circuit and Definition of Switching Characteristics Figure 1 Switching Test Circuit L S1 = 5 nh R g L S2 = 1 nh K C = 2 mf V CC DUT: Diode L LOAD A C S = 2 µf Figure 2 Definitions of Reverse Recovery Charge and Energy Diode Part: Reverse Recovery IF di/dt VR di trr 1% IF Irr dt 5% Irr 9% Irr 1% VR T5 T6 Q rr = t6 if dt t6 E rec = if vr dt t5 4

5 QRD Amperes/33 Volts ON-STATE CURRENT, I F, (AMPERES) MAXIMUM POWER DISSIPATION PER DIODE, (WATTS) FORWARD CHARACTERISTICS (TYPICAL) T j = 25 C T j = 15 C ON-STATE VOLTAGE, V FM, (VOLTS) MAXIMUM ON-STATE POWER DISSIPATION (SINUSOIDAL WAVEFORM) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) MAXIMUM CASE TEMPERATURE, T CASE, ( C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.96 C/W TIME, (s) MAXIMUM ALLOWABLE CASE TEMPERATURE (SINUSOIDAL WAVEFORM)

6 QRD Amperes/33 Volts MAXIMUM POWER DISSIPATION PER DIODE, (WATTS) MAXIMUM ON-STATE POWER DISSIPATION (RECTANGULAR WAVEFORM) (DC) (DC) MAXIMUM CASE TEMPERATURE, T CASE, ( C) MAXIMUM ALLOWABLE CASE TEMPERATURE (RECTANGULAR WAVEFORM) SAFE OPERATING AREA (TYPICAL) CURRENT, I rr, (AMPERES) V CC 25V di/dt = 1kA/µs T j = 15 C REVERSE VOLTAGE (VOLTS) 4 TIME, t rr, (µs) V CC = 18V, V GE = ±15Ω, R G(on) = 15Ω, L s = 1nH, T j = 125 C, INDUCTIVE LOAD I rr t rr CURRENT, I rr, (AMPERES) 6

7 QRD Amperes/33 Volts TIME, t rr, (µs) V CC = 18V, V GE = ±15Ω, R G(on) = 15Ω, L s = 1nH, T j = 15 C, INDUCTIVE LOAD I rr t rr CURRENT, I rr, (AMPERES) ENERGY, E rec, (AMPERES) V CC = 18V, V GE = ±15V, R G(on) = 15Ω, R G(off) = 5Ω, L s = 1nH, T j = 125 C, INDUCTIVE LOAD ENERGY, E rec, (AMPERES) V CC = 18V, V GE = ±15V, R G(on) = 15Ω, R G(off) = 5Ω, L s = 1nH, T j = 15 C, INDUCTIVE LOAD