Y (4 PLACES) G1W E1W G2W E2W U V W G3W E3W G4W RTC RTC RTC E4U E4W. AF JST Connector AWG Wire # SXH-001T-P ~ 22 or SXH-002T-P0.

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1 owerex, Inc., 173 avilion ane, Youngwood, ennsylvania (72) TI-Series (Three evel Inverter) IGBT 75 Amperes/6 Volts A H J X B E F N W AD, AF AE, AF AD, AF A D B F G M V Outline Drawing and Circuit Diagram 5/1 Rev. 2 C AC Z T N B GB U V W N Q A U R G1U RTC E1U G2U E2U G3U E3U G1V RTC E1V G2V E2V G1W RTC E1W G2W E2W GU GV GW RTC RTC RTC EU Dim. Inches Millimeters A B C.89+./ /-.5 D 3.9± ±.25 E F G H J M N Q S G3V E3V EV T AB AA S Y ( ACES) G3W E3W EW U V W Dim. Inches Millimeters R S T U.33±.1 11.±.25 V.9 2. W M5 Metric M5 X.8 2. Y.22 Dia. 5.5 Dia. Z.16. AA AB AC..5 AD AE XH-11 Housing XH-12 Housing AF JST Connector AWG Wire # SXH-1T ~ 22 or SXH-2T-.6 3 ~ 26 Description: The TI-Series has been designed for three level (neutral point clamped) topologies in applications requiring high efficiency operation and improved output waveform quality. They also provide significant benefits in applications where low output noise using small filter components is required or where long motor leads create Standing Wave Ratio (SWR) voltage surge issues. Features: Smaller Output Voltage Steps Reducing Surge Voltage ow Output Ripple Current ower Modulation Frequency With Same Quality Output Waveform Applications: Three evel Inverter Topologies Solar ower Inverters High Efficiency US ong Motor ead Applications Ordering Information: Example: Select the complete module number you desire from the table - i.e. is a 6V (V CES ), 75 Ampere TI-Series IGBT ower Module. Current Rating V CES Type Amperes Volts (x 5) CM

2 75 Amperes/6 Volts Absolute Maximum Ratings, unless otherwise specified Ratings Symbol Units Junction Temperature T j - to 15 C Storage Temperature T stg - to 125 C Mounting Torque, Main Terminals, M5 Screw (Max.) 3 in-lb Mounting Torque, Mounting Holes, M5 Screw (Max.) 3 in-lb Weight (Typical) 8 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 V rms Inverter art Collector-Emitter Voltage (G-E Short) V CES 6 Volts Gate-Emitter Voltage (C-E Short) V GES ±2 Volts Collector Current DC (T C = 25 C) I C 75 Amperes eak Collector Current (ulse) *2 I CM 15 Amperes Emitter Current (T C = 25 C) I *1 E 75 Amperes eak Emitter Current (ulse) *2 I *1 EM 15 Amperes Maximum Collector Dissipation (T C ' = 25 C) *3 C 27 Watts Clamp Diode art Repetitive eak Reverae Voltage V RRM 6 Volts Forward Current (T C = 25 C) I FM 75 Amperes Brake art Collector-Emitter Voltage (G-E Short) V CES 12 Volts Gate-Emitter Voltage (C-E Short) V GES ±2 Volts Collector Current DC (T C = 25 C) I C 25 Amperes eak Collector Current (ulse) *2 I CM 5 Amperes Maximum Collector Dissipation (T C ' = 25 C) C *3 28 Watts Repetative eak Reverse Voltage V RRM 12 Volts Forward Current (T C = 25 C) I FM 25 Amperes *1 I E, I EM, V EC, t rr, and Q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 ulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *3 Junction temperature (T j ) should not increase beyond 15 C. 2 5/1 Rev. 2

3 75 Amperes/6 Volts Electrical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Inverter art Collector-Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate-Emitter Threshold Voltage V GE(th) I C = 7.5mA, V CE = 1V Volts Gate eakage Current I GES V GE = V GES, V CE = V 2 μa Collector-Emitter Saturation Voltage V CE(sat) I C = 75A, V GE = 15V, Volts I C = 75A, V GE = 15V, 1.6 Volts Input Capacitance C ies 2 nf Output Capacitance C oes V CE = 1V, V GE = V 1. nf Reverse Transfer Capacitance C res.75 nf Total Gate Charge Q G V CC = 3V, I C = 75A, V GE = 15V 65 nc Turn-on Delay Time t d(on) V CC = 3V, I C = 75A, 5 ns Turn-on Rise Time t r V GE1 = V GE2 = 15V, 2 ns Turn-off Delay Time t d(off) R G = 25Ω, 8 ns Turn-off Fall Time t f Inductive oad Switching Operation, 3 ns Reverse Recovery Time t *1 rr I E = 75A 2 ns Reverse Recovery Charge Q *1 rr.68 μc Emitter-Collector Voltage V *1 EC I E = 75A, V GE = V 2.8 Volts External Gate Resistance R G Ω Clamp Diode art Repetitive Reverse Current I RRM V R = V RRM 1 ma Forward Voltage Drop V FM I F = 75A 2.8 Volts Reverse Recovery Time t rr I F = 75A, V CC = 3V, 2 ns Reverse Recovery Charge Q rr V GE1 = V GE2 = 15V, R G = 25Ω,.68 μc Inductive oad Switching Operation *1 I E, I EM, V EC, t rr, and Q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 5/1 Rev. 2 3

4 75 Amperes/6 Volts Electrical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Brake art Collector-Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate-Emitter Threshold Voltage V GE(th) I C = 2.5mA, V CE = 1V Volts Gate eakage Current I GES V GE = V GES, V CE = V.5 μa Collector-Emitter Saturation Voltage V CE(sat) I C = 25A, V GE = 15V, Volts I C = 25A, V GE = 15V, 2.5 Volts Input Capacitance C ies 5. nf Output Capacitance C oes V CE = 1V, V GE = V 1.8 nf Reverse Transfer Capacitance C res 1. nf Total Gate Charge Q G V CC = 6V, I C = 25A, V GE = 15V 125 nc Turn-on Delay Time t d(on) V CC = 6V, I C = 25A, 15 ns Turn-on Rise Time t r V GE1 = V GE2 = 15V, 15 ns Turn-off Delay Time t d(off) R G = 25Ω, 35 ns Turn-off Fall Time t f Inductive oad Switching Operation, ns Reverse Recovery Time t rr *1 I E = 25A 25 ns Reverse Recovery Charge Q rr *1 1.1 μc Forward Voltage Drop V FM I F = 25A 3.5 Volts Thermal and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case * R th(j-c') Q Inverter art, IGBT.6 C/W Thermal Resistance, Junction to Case * R th(j-c') D Inverter art, FWDi.71 C/W Thermal Resistance, Junction to Case * R th(j-c') D Clamp Diode art.71 C/W Thermal Resistance, Junction to Case * R th(j-c') Q Brake art, IGBT. C/W Thermal Resistance, Junction to Case * R th(j-c') D Brake art, Clamp Diode.83 C/W Contact Thermal Resistance **5 R th(c-f) Thermal Grease Applied (er 1 Module).12 C/W *1 I E, I EM, V EC, t rr, and Q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). * T C measured point is just under the chips. If using this value, R th(f-a) should be measured just under the chips. *5 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m )]. 5/1 Rev. 2

5 75 Amperes/6 Volts COECTOR CURRENT, I C, (AMERES) OUTUT CHARACTERISTICS V GE = 2V VOTAGE, V CE, (VOTS) SATURATION VOTAGE, V CE(sat), (VOTS) SATURATION VOTAGE CHARACTERISTICS 3. V GE = 15V T 2.5 j = 25 C COECTOR-CURRENT, I C, (AMERES) SATURATION VOTAGE, V CE(sat), (VOTS) SATURATION VOTAGE CHARACTERISTICS I C = 75A I C = 15A I C = 3A GATE-EMITTER VOTAGE, V GE, (VOTS) 1 3 FREE-WHEE DIODE FORWARD CHARACTERISTICS 1 3 CAM DIODE FORWARD CHARACTERISTICS CAACITANCE VS. V CE EMITTER CURRENT, I E, (AMERES) FORWARD CURRENT, I F, (AMERES) CAACITANCE, C ies, C oes, C res, (nf) 1 C ies C oes EMITTER-COECTOR VOTAGE, V EC, (VOTS) FORWARD VOTAGE, V F, (VOTS) V GE = V C res VOTAGE, V CE, (VOTS) HAF-BRIDGE SWITCHING CHARACTERISTICS GATE CHARGE VS. V GE (INVERTER ART) SWITCHING OSS VS. COECTOR CURRENT SWITCHING TIME, (ns) V CC = 3V V GE = ±15V R G = 82Ω Inductive oad 1 t d(off) t d(on) COECTOR CURRENT, I C, (AMERES) t f t r GATE-EMITTER VOTAGE, V GE, (VOTS) I C = 75A V CC = 2V V CC = 3V GATE CHARGE, QG, (nc) SWITCHING OSS, E SW(on), E SW(off), (mj/use) 1 V CC = 3V V GE = ±15V R G = 82Ω Inductive oad E SW(on) E SW(off) COECTOR CURRENT, I C, (AMERES) 5/1 Rev. 2 5

6 75 Amperes/6 Volts REVERSE RECOVERY SWITCHING OSS, E rr, (mj/use) FORWARD CURRENT, I F, (AMERES) REVERSE RECOVERY SWITCHING OSS VS. FORWARD CURRENT (CAM DIODE ART - TYICA) V CC = 3V V GE = ±15V R G = 82Ω Inductive oad FREE-WHEE DIODE FORWARD CHARACTERISTICS (BRAE ART - TYICA) NORMAIZED TRANSIENT THERMA IMEDANCE, Z th(j-c') Z th = R th (NORMAIZED VAUE) TRANSIENT THERMA IMEDANCE CHARACTERISTICS (TYICA) Single ulse T C = 25 C er Unit Base = R th(j-c') =.6 C/W (IGBT) R th(j-c') =.71 C/W (FWDi) 1-2 R th(j-c) =.71 C/W (Clamp Diode) TIME, (s) 1-1 SATURATION VOTAGE, V CE(sat), (VOTS) SATURATION VOTAGE CHARACTERISTICS (BRAE ART - TYICA) V GE = 15V 3 COECTOR-CURRENT, I C, (AMERES) 5 FORWARD CURRENT, I F, (AMERES) FORWARD VOTAGE, V F, (VOTS) 6 5/1 Rev. 2