U (2 TYP.) T WFO VUPC IN F O GND GND OUT OT OUT OT S I

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1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania (724) Three Phase IGBT Inverter W (6 PLACES) X (4 PLACES) AD AA W A B K K L Z V Z U AG Z AB AE AG B N P AC AC AH M M AF D C S TERMAL CODE 1 VUPC 2 UFO 3 UP 4 VUP1 5 VVPC 6 VFO 7 VP 8 VVP1 9 VWPC 10 WFO 11 WP R Y (4 PLACES) E F V SQ. P (19 TYP.) NC FO VNC WN V N1 VN Q UN VWPC AC P J N WFO H G U (2 TYP.) VVPC VFO WP VWP1 VP VVP1 T VUPC UP 12 VWP1 13 VNC 14 VN1 15 NC 16 UN 17 VN 18 WN UFO 19 FO VUP1 Description: Powerex Intellimod Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. NC Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B 4.33± ±0.5 C D ±0.5 E F G H J / /-0.5 K L M N P 0.43± ±0.3 Q R N W V Dimensions Inches Millimeters S T U 0.1 Dia. Dia.2.5 V 0.02 Sq. Sq. 0.5 W M5 Metric M5 X 0.22 Dia. Dia. 5.5 Y 0.24 Rad. Rad. 6 Z AA AB AC AD AE AF AG AH U P Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Temperature Using On-chip Temperature Sensing Under Voltage Low Loss Using 5th Generation IGBT Chip Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. is a 1200V, 150 Ampere Intellimod Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 10) PM

2 Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol Units Power Device Junction Temperature T j -20 to 150 C Storage Temperature T stg -40 to 125 C Mounting Torque, M5 Mounting Screws 31 in-lb Mounting Torque, M5 Main Terminal Screws 31 in-lb Module Weight (Typical) 800 Grams Supply Voltage, Surge (Applied between P - N) (surge) 1000 Volts Self-protection Supply Voltage Limit (Short Circuit protection Capability)* (prot.) 800 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V ISO 2500 Volts *VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125 C IGBT Inverter Sector Collector-Emitter Voltage (, V C = 15V) V CES 1200 Volts Collector Current (T C = 25 C) ±I C 150 Amperes Peak Collector Current (T C = 25 C) ±I CP 300 Amperes Collector Dissipation (T C = 25 C) P C 801 Watts Control Sector Supply Voltage (Applied between V UP1 -V UPC, V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC ) V D 20 Volts Input Voltage (Applied between U P -V UPC, V P -V VPC, W P -V WPC, U N - V N - W N -V NC ) V C 20 Volts Fault Output Supply Voltage V FO 20 Volts (Applied between U FO -V UPC, V FO -V VPC, W FO -V WPC, -V NC ) Fault Output Current (U FO, V FO, W FO, Terminals) I FO 20 ma 2

3 Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector-Emitter Cutoff Current I CES V CE = V CES,, 1.0 ma V CE = V CES,, 10 ma Diode Forward Voltage V EC -I C = 150A, V C = 15V, Volts Collector-Emitter Saturation Voltage V CE(sat), V C = 0V, I C = 150A, Volts, V C = 0V, I C = 150A, Volts Inductive Load Switching Times t on µs t rr, V C = 0 15V µs t C(on) = 600V, I C = 150A µs t off µs t C(off) µs Control Sector Short Circuit Trip Level SC -20 C T j 125 C, 300 Amperes Short Circuit Current Delay Time t off(sc) 0.2 µs Over Temperature Protection Trip Level C (Detect T j of IGBT Chip) R Reset Level 125 C Supply Circuit Under-voltage Protection UV Trip Level Volts (-20 T j v 125 C) UV R Reset Level 12.5 Volts Circuit Current I D, V C = 15V, V N1 -V NC ma, V C = 15V, V XP1 -V XPC 6 12 ma Input ON Threshold Voltage V th(on) Applied between U P -V UPC, Volts Input OFF Threshold Voltage V th(off) V P -V VPC, W P -V WPC, U N - V N - W N -V NC Volts Fault Output Current* I FO(H), V C = 15V 0.01 ma I FO(L), V C = 15V 5 ma Fault Output Pulse Width* t FO ms *Fault output is given only when the internal SC, and UV protections schemes of either upper or lower devide operate to protect it. ** If you use this value, R th(f-a) should be measured just under the chips. ***With ripple satisfying the following conditions: dv/dt swing ±5V/µs, Variation 2V peak to peak. 3

4 Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)q IGBT (Per 1/6 Module) (Note 1) 0.16 C/Watt R th(j-c)d FWDi (Per 1/6 Module) (Note 1) 0.26 C/Watt R th(j-c)q IGBT (Per 1/6 Module) 0.12 C/Watt R th(j-c)d FWDi (Per 1/6 Module) 0.20 C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module, C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage Applied across P-N Terminals 800 Volts Control Supply Voltage* V D Applied between V UP1 -V UPC, 15.0 ± 1.5 Volts V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC Input ON Voltage V C(on) Applied between U P -V UPC, 0.8 Volts Input OFF Voltage V C(off) V P -V VPC, W P -V WPC, U N - V N - W N -V NC 9.0 Volts PWM Input Frequency f PWM 20 khz Arm Shoot-through Blocking Time t DEAD Input Signal 2.5 µs *With ripple satisfying the following conditions: dv/dt swing ±5V/µs, Variation 2V peak to peak. Note 1:T C (Base Plate) Measurement Point TOP VIEW T C MEASUREMENT P 4

5 PUT CHARACTERISTICS 15 V D = 17V COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS COLLECTOR-CURRENT, I C, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE VS. SUPPLY VOLTAGE CHARACTERISTICS I C = 150A SUPPLY VOLTAGE, V D, (VOLTS), -I C, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) REVERSE RECOVERY CURRENT, I rr, (AMPERES) REVERSE RECOVERY CHARACTERISTICS = 600V, -I C, (AMPERES) REVERSE RECOVERY TIME, t rr, (µs) REVERSE RECOVERY CHARACTERISTICS = 600V, -I C, (AMPERES) SWITCHG LOSS (ON) VS. SWITCHG LOSS (OFF) VS. = 600V SWITCHG TIME VS. SWITCHG LOSS, E SW(on), (mj/pulse) = 600V SWITCHG LOSS, E SW(off), (mj/pulse) = 600V SWITCHG TIMES, t on, (µs) T j = 25 o C T j = 125 o C 5

6 SWITCHG TIME VS. = 600V SWITCHG TIME VS. = 600V SWITCHG TIME VS. SWITCHG TIMES, t off, (µs) = 600V SWITCHG TIMES, t c(on), (µs) SWITCHG TIMES, t c(off), (µs) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi - VERTER PART) Single Pulse T C = 25 C Per Unit Base = R th(j-c) = 0.16 C/W 10-2 (IGBT) R th(j-c) = 0.26 C/W (FWDi) TIME, (s) 6

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