IXBX25N250 = 2500V = 25A 3.3V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor. Symbol Test Conditions Maximum Ratings

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1 High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBX25N25 V CES 9 = 25V = 25A V CE(sat) 3.3V Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25 V V CGR = 25 C to 15 C, R GE = 1MΩ 25 V V GES Continuous ± 2 V V GEM Transient ± 3 V 25 = 25 C 55 A 9 = 9 C 25 A M = 25 C, 1ms 18 A SSOA V GE = 15V, T VJ = 125 C, R G = 4.7Ω M = 8 A (RBSOA) Clamped Inductive Load V CES 2 V P C = 25 C 3 W C M 15 C T stg C T L 1.6mm (.62 in.) From Case for 1s 3 C T SOLD Plastic Body for 1 seconds 26 C F C Mounting Force / N/lb. Weight 6 g PLUS247 TM Features G C E High Blocking Voltage International Standard Package Low Conduction Losses Advantages Low Gate Drive Requirement High Power Density Tab G = Gate E = Emitter C = Collector Tab = Collector Applications Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BV CES = 25μA, V GE = V 25 V V GE(th) = 25μA, V CE = V GE V Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generator Capacitor Discharge Circuit AC Switches ES V CE =.8 V CES, V GE = V 5 μa = 125 C 3 ma I GES V CE = V, V GE = ± 2V ±1 na V CE(sat) = 9, V GE = 15V, Note V = 125 C 3.4 V 21 IXYS CORPORATION, All Rights Reserved DS144A(1/1)

2 IXBX25N25 Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. PLUS 247 TM (IXBX) Outline g fs = 25A, V CE = 1V, Note S C ies 245 pf C oes V CE = 25V, V GE = V, f = 1MHz 96 pf C res 35 pf Q g 13 nc Q ge = 15V, V CE = 1V 17 nc Q gc 43 nc t d(on) 55 ns Resistive Switching times, T t J = 25 C r 24 ns I t C = 15V d(off) 145 ns V t CE = 125V, R G = 4.7Ω f 64 ns t d(on) 54 ns Resistive Switching times, = 125 C t r 64 ns I t C = 15V d(off) 14 ns V t CE = 125V, R G = 4.7Ω f 51 ns R thjc.42 C/W R thcs.15 C/W Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b C D E e 5.45 BSC.215 BSC L L Q R Reverse Diode Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. V F I F = V 2.3 V t rr I F = 25A, -di F /dt = 1A/μs 1.6 μs I RM V R = 1V, V GE = V 37.2 A Note 1. Pulse test, t 3μs, duty cycle, d 2%. *Additional provisions for lead to lead voltage isolation are required at V DS > 12V. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537

3 IXBX25N25 Fig. 1. Output = 25ºC Fig. 2. Extended Output = 25ºC V GE = 25V 2V 15V 25 V GE = 25V 2V V V 15 1V Fig. 3. Output Fig. 4. Dependence of V CE(sat) on Junction Temperature V GE = 25V 2V 15V V GE = 15V V VCE(sat) - Normalized = 5A = 25A 1.8 = 12.5A 5 5V Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 1.15 Fig. 6. Breakdown & Threshold Voltages vs. Junction Temperature VCE - Volts = 5A 25A = 25ºC BVCES & VGE(th) - Normalized BV CES V GE(th) A V GE - Volts IXYS CORPORATION, All Rights Reserved

4 IXBX25N25 6 Fig. 7. Input Admittance 3 Fig. 8. Transconductance = - 4ºC ºC - 4ºC g f s - Siemens ºC 125ºC V GE - Volts Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 1. Gate Charge V CE = 1kV = 25A I G = 1mA IF - Amperes = 25ºC VGE - Volts V F - Volts Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Reverse-Bias Safe Operating Area 1, 9 f = 1 MHz 8 Capacitance - PicoFarads 1, 1 C res C oes C ies R G = 4.7Ω dv / dt < 1V / ns IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions

5 IXBX25N25 8 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 8 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current t r - Nanoseconds V CE = 125V = 25A = 5A t r - Nanoseconds V CE = 125V = 25ºC Amperes 1 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 14 9 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 18 t r - Nanoseconds t r t d(on) , V GE = 15V V CE = 125V = 25A, 5A t d(on) - Nanoseconds t f - Nanoseconds t f t d(off) V CE = 125V = 5A = 25A t d(off) - Nanoseconds R G - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 2 7 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1 t f - Nanoseconds t f t d(off) V CE = 125V t d(off) - Nanoseconds t f - Nanoseconds t f t d(off) , V GE = 15V V CE = 125V = 25A = 5A t d(off) - Nanoseconds , 25ºC Amperes R G - Ohms 21 IXYS CORPORATION, All Rights Reserved

6 IXBX25N25 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)jc - ºC / W Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_25N25(6P)9-3-8