MITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE
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1 PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. N VI VCC TEMP FO SR CI VC FO SR IN OUT1 OUT2 SENS SINK GND Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D E.15±.1 8.±.25 F G / /-.5 H J K L C E Dimensions Inches Millimeters M N P Q R S.8 2. T.2 SQ.64 SQ U V M8 M8 W Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Current Over Temperature Under Voltage Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM8HSA6 is a 6V, 8 Ampere Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 8 6 Sep.2
2 PM8HSA6 Absolute Maximum Ratings, T j = 25 C unless otherwise specified Symbol Ratings Units Power Device Junction Temperature T j -2 to 15 C Storage Temperature T stg -4 to 125 C Case Operating Temperature T C -2 to 1 C Mounting Torque, M6 Mounting Screws.92 ~ 5.88 N m Mounting Torque, M8 Main Terminal Screws 8.8 ~ 1.8 N m Module Weight (Typical) 6 Grams Supply Voltage Protected by OC and SC (V D = 1.5 ~16.5V, Inverter Part) V CC(prot.) 4 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Vrms Control Sector, T j = 25 C unless otherwise specified Supply Voltage (Applied between V 1 -V C ) V D 2 Volts Input Voltage (Applied between C 1 -V C ) V CIN 1 Volts Fault Output Supply Voltage (Applied between F O and V NC ) V FO 2 Volts Fault Output Current (Sink Current of F O Terminal) I FO 2 ma IGBT Inverter Sector, T j = 25 C unless otherwise specified Collector-Emitter Voltage (, V CIN = 5V) V CES 6 Volts Collector Current, (T C = 25 C) I C 8 Amperes Peak Collector Current, (T C = 25 C) I CP 16 Amperes Collector Dissipation P C 21 Watts Sep.2
3 Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector MITSUBISHI INTELLIGENT POWER MODULES PM8HSA6 Over Current Trip Level Inverter Part OC -2 C T j 125 C, 1 15 Amperes Short Circuit Trip Level Inverter Part SC -2 C T j 125 C, Amperes Over Current Delay Time t off(oc) 5 µs Over Temperature Protection OT Trip Level C OT r Reset Level C Supply Circuit Under Voltage Protection UV Trip Level Volts UV r Reset Level 12.5 Volts Supply Voltage V D Applied between V 1 -V C Volts Circuit Current I D, V CIN = 5V 2 ma Input ON Threshold Voltage V th(on) Applied between C 1 -V C Volts Input OFF Threshold Voltage V th(off) Applied between C 1 -V C Volts PWM Input Frequency f PWM -φ Sinusoidal 15 2 khz Arm Shoot-through Blocking Time t dead At IPM's Input Terminals.5 µs Fault Output Current I FO(H), V FO = 15V.1 ma I FO(L), V FO = 15V 1 15 ma Minimum Fault Output Pulse Width t FO ms SR Terminal Output Voltage V SR -2 C T j 125 C, Rin = 6.8kΩ Volts Sep.2
4 PM8HSA6 Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I CES V CE = V CES, T j = 25 C 1. ma V CE = V CES, T j = 125 C 1. ma Emitter-Collector Voltage V EC -I C = 8A,, V CIN = 5V Volts Collector-Emitter Saturation Voltage V CE(sat), V CIN = V, I C = 8A, Volts T j = 25 C, Pulsed, V CIN = V, I C = 8A, Volts T j = 125 C, Pulsed Inductive Load Switching Times t on µs t rr, V CIN = 5V.15. µs t C(on) V CC = V, I C = 8A.4 1. µs t off T j = 125 C µs t C(off).5 1. µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)q Each IGBT.6 C/Watt R th(j-c)f Each FWDi.9 C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.8 C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across C-E Terminals ~ 4 Volts V D Applied between V 1 -V C 15 ± 1.5 Vol Input ON Voltage V CIN(on) Applied between C 1 -V C ~.8 Volts Input OFF Voltage V CIN(off) Applied between C 1 -V C 4. ~ V SR Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 2 khz Minimum Dead Time t dead Input Signal.5 µs Sep.2
5 PM8HSA6 SWITCHING TIMES, t on, t off, (µs) SATURATION VOLTAGE V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) V CC = V Inductive Load t off t on DIODE FORWARD CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat), (VOLTS) SWITCHING TIMES, t c(on), t c(off), (µs) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) I C = 8A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 1 1 V CC = V Inductive Load t c(off) t c(on) OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) REVERSE RECOVERY TIME, t rr, (µs) COLLECTOR-EMITTER VOLTAGE, V CE(sat), (VOLTS) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 1 1 V CC = V Inductive Load OUTPUT CHARACTERISTICS (TYPICAL) V D = 17V I rr t rr COLLECTOR REVERSE CURRENT, -I C, (AMPERES) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR REVERSE CURRENT, -I C, (AMPERES) EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) SUPPLY VOLTAGE, V D, (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) JUNCTION TEMPERATURE, T j, ( o C) Sep.2
6 PM8HSA6 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDANCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) JUNCTION TEMPERATURE, T j, ( o C) UV TRIP-RESET LEVEL, UV, UV r, (VOLTS) UV t UV r JUNCTION TEMPERATURE, T j, ( o C) 14 TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) SINGLE PULSE STANDARD VALUE = R th(j-c)q =.6 o C/W TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) SINGLE PULSE STANDARD VALUE = R th(j-c)f =.9 o C/W TIME, (s) Sep.2
U P V VPI VFO WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationU P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
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More informationT - 4 TYP. XØ (2 PLACES) W SQ. PIN (10 PLACES) TERMINAL CODE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO VP1 RFO AMP E2 C2E1 C1
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More informationV VPC V FO V WPI W FO W UP UFO V VPI GND GND GND GND V CC OUT OUT. Dimensions Inches Millimeters L
MITSUBISHI TELLIGET POWER MODULES SULATED PACKAGE D R - DIA. (4 TYP.) E H U V J 12 A B 34 7 5 6 8 9 11 13 15 17 19 T (15 TYP.) Q (4 TYP.) 10 12 14 16 18 U V P B W L M M M M M G 6.0 ± 0.1 X 0.8 ± 0.1 MM
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