FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC

Transcription

1 FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC Features Low Thermal Resistance Thanks to Al 2 O 3 DBC Substrate 600 V - 30 A 2-Phase Interleaved PFC Including A Drive IC for Gate Driving and Protection Typical Switching Frequency of 20 khz Built-in NTC Thermistor for Monitoring Over-Temperature Isolation Rating of 2500 V rms /min UL Certified No.E Applications 2-Phase Interleaved PFC Converter for Air Conditioner General Description April 2013 FPAM30LH60 Is A PFC SPM 2 Series for 2-Phase Interleaved PFC(Power Factor Correction) that Fairchild Has Developed for Mid-Power Home Appliance Applications such as System Air Conditioners. It Combines Optimized Drive Circuit with Low-loss IGBTs in A Fully Isolated Package with DBC Whitch Has A Low Thermal Resistance. System Reliability Is Further Enhanced by The Integrated Under-Voltage Lock-Out, Over-Current Protection and Built-in NTC Thermistor for Monitoring Over- Temperature. Related Source Will Be Released Fig. 1. Package Overview Package Marking and Ordering Information Device Marking Device Package Packing Type Reel Size Tape Width Quantity FPAM30LH60 FPAM30LH60 S32EA-032 RAIL Fairchild Semiconductor Corporation 1

2 Integrated Drive, Protection and System Control Functions For IGBTs : Gate drive circuit, Over Current(OC) protection, Control supply circuit Under-Voltage(UV) protection Fault signal : Corresponding to OC and UV fault Built-in thermistor: Over-temperature monitoring Input interface : Active-high interface, can work with 3.3 / 5 V Logic Pin Configuration (1)CSC (2)COM (3)VFO (4)INX (5)INY (6)COM (7)n.c. (8)VCC (9)VCC (10)COM (11)RTH (12)VTH (24)P (25)P (26)PY (27)n.c. (28)PX (29)X Case temperature(tc) detecting point (13)NR (14)NR (15)n.c. (16)n.c. (17)n.c. (18)R (19)R (20)n.c. (21)n.c. (22)S (23)S (30)Y (31)NP (32)PR Dimension unit: millimeter Figure 2. Top View 2012 Fairchild Semiconductor Corporation 2

3 Pin Descriptions Pin Number Pin Name Pin Description 1 C SC Signal input for over current detection 2,6,10 COM Common supply ground 3 V FO Fault out 4 IN X PWM input for X IGBT drive 5 IN Y PWM input for Y IGBT drive 7 n.c. 8,9 V CC Common supply voltage of IC for IGBT drive 11 R TH Thermister 12 V TH Thermister 13,14 N R Negative DC-link of Rectifier Diode 15,16,17 n.c. 18,19 R AC input for R phase 20,21 n.c. 22,23 S AC input for S phase 24,25 P Output of Diode 26 P Y Input of Diode 27 n.c. 28 P X Input of Diode 29 X Output of X phase IGBT 30 Y Output of Y phase IGBT 31 N P Negative DC-link of IGBT 32 P R Positive DC-link of Rectifier Diode Internal Equivalent Circuit (11)R TH (12)V TH THERMISTOR (24)(25)P (26)P Y (1)C SC (3)V FO CSC VFO (28)P X (29)X (30)Y (4)IN X (5)IN Y INX INY OUT X (32)P R (8)(9)V CC (2)(6)(10) COM VCC COM OUT Y (18)(19)R (22)(23)S (31)N P (13)(14)N R Figure 3. Internal Block Diagram 2012 Fairchild Semiconductor Corporation 3

4 Absolute Maximum Ratings (T J = 25 C, Unless Otherwise Specified) Converter Part Symbol Parameter Conditions Rating Unit V i Input Supply Voltage Applied between R-S 264 V rms V PN Output Voltage Applied between X-N P,Y-N P, P-P X, P-P Y 450 V V PN(Surge) Output Supply Voltage (Surge) Applied between X-N P,Y-N P, P-P X, P-P Y 500 V V CES Collector-emitter Voltage Breakdown Voltage between X-N P,Y-N P 600 V V RRM Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P-P X, P-P Y 600 V V RRMR Repetitive Peak Reverse Voltage of Rectifier Breakdown Voltage between P R -R, P R -S, R- N R, S-N R 900 V *I F FRD Forward Current T C = 25 C, T J < 125 C 30 A *I FSM Peak Surge Current of FRD Non-repetitive, 60 Hz single half-sine wave 300 A *I FR Rectified Forward Current T C = 25 C, T J < 125 C 30 A *I FSMR Peak Surge Current of Rectifier Non-repetitive, 60 Hz single half-sine wave 300 A ± *I C Each IGBT Collector Current T C = 25 C, T J < 125 C 30 A ± *I CP Each IGBT Collector Current(Peak) T C = 25 C, T J < 125 C, Under 1ms pulse width 60 A *P C Collector Dissipation T C = 25 C per single IGBT 107 W T J Operating Junction Temperature (Note 1) -40 ~ 125 C Note: 1. The maximum junction temperature rating of the power chips integrated within the PFC SPM product is 125 C. 2. Marking * is calculation value or design factor. Control Part Symbol Parameter Conditions Rating Unit V CC Control Supply Voltage Applied between V CC - COM 20 V V IN Input Signal Voltage Applied between IN X, IN Y - COM -0.3 ~ V CC V V FO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V CC V I FO Fault Output Current Sink Current at V FO Pin 1 ma V SC Current Sensing Input Voltage Applied between C SC - COM -0.3 ~ V CC V Total System Symbol Parameter Conditions Rating Unit T STG Storage Temperature -40 ~ 125 C V ISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate 2500 V rms Thermal Resistance Symbol Parameter Condition Min. Typ. Max. Unit R th(j-c)q Junction to Case Thermal Each IGBT under Operating Condition C/W R th(j-c)d Resistance Each Diode under Operating Condition C/W R th(j-c)r Each Rectifier under Operating Condition C/W 2012 Fairchild Semiconductor Corporation 4

5 Electrical Characteristics (T J = 25 C, Unless Otherwise Specified) Converter Part Symbol Parameter Conditions Min. Typ. Max. Unit V CE(SAT) IGBT Saturation Voltage V CC = 15V, V IN = 5V, I C = 30A V V FF FRD Forward Voltage I F = 30A V V FR Rectifier Forward Voltage I FR = 30A V I RR Switching Characteristic V PN = 400V, V CC = 15V, I C = 15A, A t RR V IN = 0V 5V, Inductive Load (Note 3), per single IGBT ns t ON ns t OFF ns t C(ON) ns t C(OFF) ns I CES Collector-Emitter Leakage Current V CES =600V A Note: 3. t ON and t OFF include the propagation delay time of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol Parameter Conditions Min. Typ. Max. Unit I QCC I PCC Quiescent V CC Supply Current Operating VCC Supply Current V CC = 15 V, IN X, IN Y - COM = 0 V, Supply current between V CC and COM V CC = 15 V, f PWM = 20 khz, duty = 50%, applied to one PWM signal input per single IGBT, Supply current between V CC and COM ma ma V FOH Fault Output Voltage V SC = 0 V, V FO Circuit: 10 k to 5 V Pull-up V V FOL V SC = 1 V, V FO Circuit: 10 k to 5 V Pull-up V V SC(Ref) Over-Current Protection Trip Level Voltage of CSC pin V CC = 15 V V UV CCD Supply Circuit Under- Detection Level V UV CCR Voltage Protection Reset Level V t FOD Fault-out Pulse Width s V IN(ON) ON Threshold Voltage Applied between IN X, IN Y - COM V V IN(OFF) OFF Threshold Voltage Applied between IN X, IN Y - COM V R TH Resistance of T TH = 25 C (Figure 5)(Note 4) T TH = 100 C (Figure 5)(Note 4) k Note: 4. T TH is the temperature of thermister itself. To know case temperature ( T C ), please make the experiment considering your application Fairchild Semiconductor Corporation 5

6 . V CE 200 V IN t ON 100% I C 100% I C t RR 90% I C 10% I C 10% V CE t C(ON) (a) turn-on I RR Figure 4. Switching Time Definition I C R-T Curve 10% V CE 10% I C t OFF t C(OFF) (b) turn-off 4 Resistance R TH [k ] Resistance R TH [k ] Temperature T TH [degc] Temperature T TH [degc] Figure 5. R-T Curve of The Built-in Thermistor 2012 Fairchild Semiconductor Corporation 6

7 Recommended Operating Conditions (T J = 25 C, Unless Otherwise Specified) Symbol Parameter Conditions Mechanical Characteristics and Ratings Value Min. Typ. Max. V i Input Supply Voltage Applied between R - S V rms I i Input Current T C < 100 C, V i = 220 V, V O = 360 V, f PWM = 20 khz per each IGBT Unit A rms V PN Supply Voltage Applied between X-N P, Y-N P, P-P X, P-P Y V V CC Control Supply Voltage Applied between V CC - COM V dv CC /dt Supply Variation -1-1 V/ s I FO Fault Output Current Sink Current at V FO Pin ma f PWM PWM Input Frequency -40 C < T J < 125 C per single IGBT khz Parameter Conditions Limits Min. Typ. Max. Mounting Torque Mounting Screw: M4 Recommended 0.98 N m N m Recommended 10 kg cm kg cm Device Flatness Refer to Figure m Weight g Unit Figure 6. Flatness Measurement Position 2012 Fairchild Semiconductor Corporation 7

8 Time Charts of Protective Function Input Signal Protection Circuit State Control Supply Voltage Output Current Fault Output Signal UV CCR RESET a1 a2 a1 : Control supply voltage rises: After the voltage rises UV CCR, the circuits start to operate when the next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UV CCD ). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UV CCR ). a7 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection UV CCD SET a3 a4 a5 RESET a6 a7 Input Voltage (VIN) Internal IGBT Gate-Emitter Voltage Output Current c1 OC c6 c4 c3 c2 c7 c8 (with the external over current detection circuit) c1 : Normal operation: IGBT ON and carrying current. c2 : Over current detection (OC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts. c6 : Input L : IGBT OFF state. c7 : Input H : IGBT ON state, but during the active period of fault output the IGBT doesn t turn ON. c8 : IGBT OFF state Input signal to CSC pin for Protection Fault Output Signal SET c5 RESET Figure 8. Over Current Protection 2012 Fairchild Semiconductor Corporation 8

9 +5V Input signal for over current protection +5V R SCF R FO C SCF Controller R F R F C F R T R TH THERMISTOR V TH CSC VFO INX OUT X Current sensing C F INY R V AC +15V VCC OUT Y S COM P P X P Y X Y P R L L D Y D X N N R P Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 ~ 3 cm) 2. V FO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes I FO up to 1 ma. 3. Input signal is High-Active type. There is a 5 kω resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. R F C F constant should be selected in the range 50~150ns. (Recommended R F = 100 Ω, C F = 1 nf) V DC 4. To prevent error of the protection function, the wiring related with R SCF and C SCF should be as short as possible. 5. In the over current protection circuit, please select the R SCF, C SCF time constant in the range 1.5 ~ 2 μs. 6. Each capacitors should be mounted as close to the PFC SPM product pins as possible. 7. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 8. Internal NTC thermistor can be used for monitoring of the case temperature and protecting the device from the overheating operation. Select an appropriate resistor R T according to the application. 9. It is recommended that anti-parallel diode(d X,D Y ) be connected with each IGBT. Figure 9. Typical Application Circuit 2012 Fairchild Semiconductor Corporation 9

10 Detailed Package Outline Drawings Dimension unit: millimeter 2012 Fairchild Semiconductor Corporation 10

11 2012 Fairchild Semiconductor Corporation 11