Applied between V UFB -V UFS, V VFB -V VFS,V WFB -V WFS. Applied between U P,V P,W P -V PC, U N,V N,W N -V NC

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2 Maximum Ratings (Tj=25 C, unless otherwise noted) : Inverter Part: Item Symbol Condition Rating Unit Supply voltage CC Applied between P-NU,N,NW 450 Supply voltage (surge) CC(surge) Applied between P-NU,N,NW 500 Collector-emitter voltage CES 600 Each IGBT collector current ±I C Tc=25 C 20 A Each IGBT collector current (peak) ±I CP Tc=25 C, less than 1ms 40 A Collector dissipation P C Tc=25 C, per 1 chip 52.6 W Junction temperature T j (Note 1) -20~+125 C (Note 1) The maximum junction temperature rating of the power chips integrated within the is 150 C(@Tc 100 C). However, in order to ensure safe operation of the, the average junction temperature should be limited to Tj(ave) 125 C(@Tc 100 C). Control (Protection) Part Item Symbol Condition Rating Unit Control supply voltage D Applied between P1 - PC, N1 - NC 20 Control supply voltage DB Applied between UFB - UFS, FB - FS, WFB - WFS 20 Input voltage IN Applied between U P, P,W P - PC, U N, N,W N - NC -0.5~ D +0.5 Fault output supply voltage FO Applied between Fo- NC -0.5~ D +0.5 Fault output current I FO Sink current at Fo terminal 1 ma Current sensing input voltage SC Applied between CIN- NC -0.5~ D +0.5 Total System Item Symbol Condition Rating Unit Self protection supply voltage limit (short circuit protection capability) CC(PROT) D =13.5~16.5, Inverter part Tj=125 C, non-repetitive less than 2µs 400 Module case operation temperature Tc (Note 2) -20~+100 C Storage temperature Tstg -40~+125 C Isolation voltage iso 60Hz, Sinusoidal, AC 1 minutes, connection pins to heat-sink plate 2500 rms (Note 2) Tc measurement position Control terminals Heat sink boundary Heat sink Tc Power terminals Tc (2/7)

3 Thermal Resistance : Item Symbol Condition Min. Typ. Max. Unit Junction to case thermal R th(j-c)q Inverter IGBT part (per 1/6 module) resistance R th(j-c)f Inverter FWD part (per 1/6 module) Contact thermal resistance (Note 3) R th(c-f) Between case and fin with grease applied (per 1 module) C/W (Note 3)Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100µm~+200µm on the contacting surface of and heat-sink. Electrical Characteristics ( Tj=25 C, unless otherwise noted ): Inverter Part Item Symbol Condition Min. Typ. Max. Unit Collector-emitter CE(sat) D = DB =15 Tj=25 C saturation voltage IN =5, I C =20A, Tj=125 C FWD forward voltage EC T j =25 C, IN =0, -I C =20A Switching time t on CC =300, D = DB = t rr IN =5 0, I C =20A t c(on) Tj=125 C µs t off Inductive load (upper-lower arm) t c(off) Collector-emitter I CES CE = CES Tj=25 C cut-off current Tj=125 C ma Control (Protection) Part: Item Symbol Condition Min. Typ. Max. Unit Circuit current I D D = DB =15 Total of P1 - PC, N1 - NC IN =5 UFB - UFS, FB - FS, WFB - WFS ma D = DB =15 Total of P1 - PC, N1 - NC IN =0 UFB - UFS, FB - FS, WFB - WFS Fo output voltage FOH sc=0, Fo circuit:10kω to 5 pull-up FOL sc=1, I FO =1mA Input current I IN IN = ma short circuit trip level SC(ref) Tj=25 C, D =15 (Note 4) U DBt Tj 125 C Trip level Control supply under- U DBr Reset level voltage protection U Dt Trip level U Dr Reset level Fault output pulse width t FO C FO =22nF (Note 5) ms ON threshold voltage th(on) Applied between U P, P,W P - PC, OFF threshold voltage th(off) U N, N,W N - NC (Note 4) Short circuit protection functions only for the N-side IGBTs. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the rated current. (Note 5) Fault signal is output when the lower arms short circuit or control supply under-voltage protection happens. The fault output pulse-width t FO depends on the capacitance value of C FO (C FO = t FO [F]) (3/7)

4 Mechanical Characteristics and Ratings: Item Condition Min. Typ. Max. Unit Mounting torque Mounting screw: (M4) Recommended: 1.18N m N m Weight 77 g Heat-sink flatness (Note 6) µm (Note 6) + - Measurement position 3.25mm Heat-sink side - + Heat-sink side Recommended Operation Conditions: Item Symbol Condition Recommended Unit Min. Typ. Max. Supply voltage CC Applied between P-NU,N,NW Control supply voltage D Applied between P1 - PC, N1 - NC Control supply voltage DB Applied between UFB - UFS, FB - FS, WFB - WFS Control supply variation D, DB /µs Arm-shoot-through blocking time t dead For each input signal, Tc 100 C µs PWM input frequency f PWM Tc 100 C, Tj 125 C khz PWIN(on) (Note 7) CC 350, 13.5 D 16.5, I C 20A Minimum input pulse width PWIN(off) 13.0 DB 18.5, µs -20 T f 100 C, N line wiring inductance less than 10nH (Note 8) 20<I C 34A NC variation NC Potential difference between NC -NU,N,NW including surge voltage (Note 7) might make no response to the input on signal with pulse width less than PWIN(on). (Note 8) might make no response to the input off signal with pulse width less than PWIN(off), or P-side only the turn on time becomes long as shown in Fig.2. However, off-latch will not happen for next input on signal in this case. For the wiring inductance of N line, please refer to Fig.6. Fig.2 Output behavior under short input off signal with pulse width less than PWIN(off) P-side control input (P-side only) IGBT gate Real line: off pulse width larger than PWIN(off) turn on time is t1 (conventional value) Broken line: off pulse width less than PWIN(off) turn on time is t2 (t2 > t1) Output current t2 t1 (4/7)

5 Fig.3 Internal Circuit UFB UFS HIC1 P1 IGBT1 Di1 CC B P U P IN HO COM S U FB FS P1 CC HIC2 B IGBT2 Di2 P IN HO COM S WFB WFS P1 CC HIC3 B IGBT3 Di3 W P IN HO PC COM S W LIC IGBT4 Di4 U OUT N1 CC U NO NU Fo Fo IGBT5 Di5 OUT U N U N NO N N N IGBT6 Di6 W N W N W OUT W NO NW NC GND CIN CIN CFO CFO (5/7)

6 Fig.4 Timing Charts of the Protective Functions [A] Short-Circuit Protection ( N-side only ) (with external shunt resistor and CR filter) a1. Normal operation: IGBT turn on and carry current. a2. Short circuit current detected (SC trigger). a3. IGBT gate hard interrupted. a4. IGBT turn off. a5. Fo output: Fo output pulse width is determined by the external capacitance C FO. a6. Input L : IGBT off. a7. Input H : IGBT on, but during the Fo output period the IGBT will not turn on. a8. IGBT keep in off state. Lower-arms control input a6 a7 Protection circuit state SET Internal IGBT gate a3 a2 Output current Ic a1 SC a4 a8 Sense voltage of the shunt resistance SC reference voltage CR circuit time constant DELAY (*Note) Error output Fo a5 [B] Under- oltage Protection ( N-side, U D ) b1. Control supply voltage rise: After the voltage level reaches U Dr, the drive circuits begin to work at the rising edge of the next input signal. b2. Normal operation: IGBT turn on and carry current. b3. Under voltage trip (U Dt ). b4. IGBT turn off regardless of the control input level. b5. Fo output. b6. Under voltage reset (U Dr ). b7. Normal operation: IGBT turn on and carry current. Control input Protective circuit state SET Control supply D U Dr b1 U Dt b3 b6 Output current Ic b2 b4 b7 Fault output Fo b5 (6/7)

7 [C] Under- oltage Protection ( P-side, U DB ) c1. Control supply voltage rise: After the voltage reaches U DBr, the drive circuit begins to work. c2. Normal operation: IGBT turn on and carry current. c3. Under voltage trip (U DBt ). c4. IGBT turn off regardless of the control input level, but there is no Fo signal output. c5. Under voltage reset (U DBr ). c6. Normal operation: IGBT turn on and carry current. Control input Protective circuit state SET Control supply DB U DBr c1 U DBt c4 c6 Output current Ic c2 c3 c5 c7 Fault output Fo High level output (=no Fo output) Fig.5 Recommended MCU I/O interface circuit 5 line MCU 10kΩ U P, P,W P, N, N,W N 2.5kΩ(min) Fo NC(Logic) Note) RC coupling at each input (parts shown dotted) may change depending on the PWM control scheme used in the application and the wiring impedance of the application s printed circuit board. The input signal section integrates a 2.5kΩ(min) pull-down resistor. Therefore, when using a external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. Fig.6 Wiring method of shunt resistor circuit Wiring inductance should less than 10nH NU N Shunt resistor Recommend to use chip type resistor. NC NW This GND wiring from NC should be as close to the shunt resistors as possible (7/7)