POW-R-BLOK TM Dual SCR Isolated Module 150 Amperes / Up to 1600 Volts. CD63 15A Dual SCR Isolated POW-R-BLOK TM Module 150 Amperes / Up to 1600 Volts
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1 CD mperes / Up to 16 B G "J" (3) OUTLINE DRWING D E F F M F "K" (2) S Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. has been tested and recognized by the Underwriters Laboratories. R C H CONNECTION DIGRM N P Q ~ 1 CD63 15 Dual SCR Isolated Module 15 mperes / Up to 16 Features: TElectrically Isolated Heatsinking TDBC lumina (l 2 O 3 ) Insulator T Glass Passivated Chips T Metal Baseplate T Low Thermal Impedance for Improved Current Capability T Quick Connect Gate Terminal with Provision for Keyed Mating Plug T UL Recognized (E7824) CD63_15 Outline Dimensions Dimension Inches Millimeters B C D E F G H.35 9 J M6 M6 K M.2 5 N.28 7 P Q R.3.8 S Note: Dimensions are for reference only. Ordering Information: Select the complete nine digit module part number from the table below. Example: CD is a 16Volt, 15 mpere Dual SCR Isolated Module Type Voltage (x) CD Current mperes (x 1) 15 Benefits: TNo dditional Insulation Components Required TEasy Installation TNo Clamping Components Required T Reduce Engineering Time pplications: TBridge Circuits TC & DC Motor Drives TBattery Supplies TPower Supplies TLarge IGBT Circuit Front Ends TLighting Control THeat & Temperature Control TWelders Revision Date: 12/4/22
2 CD mperes / Up to 16 bsolute Maximum Ratings Characteristics Conditions Symbol Units Repetitive Peak Forward and Reverse Blocking Voltage V DRM & V RRM up to 16 V Non-Repetitive Peak Reverse Blocking Voltage (t < 5 msec) RMS Forward Current verage Forward Current Peak One Cycle Surge Current, Non-Repetitive Peak Three Cycle Surge Current, Non-Repetitive Peak Ten Cycle Surge Current, Non-Repetitive for Fusing for One Cycle 18 Conduction, T C=85 C 18 Conduction, T C=85 C (C Switch) 18 Conduction, T C=85 C 18 Conduction, T C=9 C 6 Hz, % V RRM reapplied, T j =125 C 6 Hz, No V RRM reapplied, T j =125 C 5 Hz, % V RRM reapplied, T j =125 C 5 Hz, No V RRM reapplied, T j =125 C 6 Hz, % V RRM reapplied, T j =125 C 5 Hz, % V RRM reapplied, T j =125 C 6 Hz, % V RRM reapplied, T j =125 C 5 Hz, % V RRM reapplied, T j =125 C 8.3 ms, % V RRM reapplied, T j =125 C 8.3 ms, No V RRM reapplied, T j =125 C 1 ms, % V RRM reapplied, T j =125 C 1 ms, No V RRM reapplied, T j =125 C V RSM V RRM + V I T(RMS) I T(RMS) I T(V) I T(V) ,7 18, 84, 119, Maximum Rate-of-Rise of On-State Current, T j =125 C, di/dt 3 /µs Non Repetitive V D = V DRM (Rated), I TM =4, I G =.5, T r <.25µs, t p > 6µs Peak Gate Power Dissipation T p < 5 ms, T j = 125 C P GM 12 W verage Gate Power Dissipation F = 5 Hz, T j = 125 C P G(V) 3 W Peak Forward Gate Current T p < 5 ms, T j = 125 C I GFM 3 Peak Reverse Gate Voltage T p < 5 ms, T j = 125 C V GRM 1 V Operating Temperature T J -4 to +125 C Storage Temperature T stg -4 to +15 C 2 sec 2 sec 2 sec 2 sec Max. Mounting Torque, M6 Mounting Screw on Terminals in.-lb. Nm Max. Mounting Torque, Module to Heatsink in.-lb. Nm Module Weight, Typical 2 g 7.1 oz. V 25C V rms 35 V Revision Date: 12/4/22
3 CD mperes / Up to 16 Electrical Characteristics, T J =25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Repetitive Peak Forward Leakage Current I DRM Up to 16V, T J=125 C 5 m Repetitive Peak Reverse Leakage Current I RRM Up to 16V, T J=125 C 5 m Peak On-State Voltage V TM I TM= V Threshold Voltage, Low-level Slope Resistance, Low-level Threshold Voltage, High-level Slope Resistance, High-level V TM Coefficients, Full Range V (TO)1 r T1 V (TO)2 r T2 T J = 125 C, I = 16.7% x πi T(V) to πi T(V) T J = 125 C, I = πi T(V) to T J = 125 C, I = 15% x I T(V) to V TM = + B Ln I +C I + D Sqrt I Minimum dv/dt dv/dt Exponential to 2/3 V DRM T j=125 C, Gate Open = B = C = D = E-3 1.3E V mω V mω V/µs Turn-On Time (Typical) t on I TM = 3, V D = 2/3 V DRM dig/dt =1/µs 3 (Typical) µs Turn-Off Time (Typical) t off T J = 125 C, I T= 3, R gk = Ω 5-2 (Typical) µs V r = 5V, -di/dt=15 /µs Re-pplied dv/dt = 2V/µs, Linear to 2/3 V DRM Gate Trigger Current I GT T j= -4 C, V D=6V, R a =1Ω, Resistive Load T j= 25 C, V D=6V, R a =1Ω, Resistive Load T j=125 C, V D=6V, R a =1Ω, Resistive Load m m m Gate Trigger Voltage V GT T j= -4 C, V D=6V, R a =1Ω, Resistive Load T j= 25 C, V D=6V, R a =1Ω, Resistive Load T j=125 C, V D=6V, R a =1Ω, Resistive Load Non-Triggering Gate Voltage V GDM T j=125 C, V D=V DRM.3 Non-Triggering Gate Current I GDM T j=125 C, V D=V DRM 1 m Thermal Characteristics Characteristics Symbol Max. Units Thermal Resistance, Junction to Case DC Operation Thermal Impedance Coefficients (Per Junction) R ΘJ-C Per Module, both conducting Per Junction, both conducting Z ΘJ-C Z Q J-C= K 1 (1-exp(-t/τ 1)) K 1 = E-3 τ 1 =4.511E-5 + K 2 (1-exp(-t/τ 2)) + K 3 (1-exp(-t/τ 3)) K 2 =3.859E+1 τ 2 =1.3558E-1 K 3 = E+1 τ 3 =1.3311E-1 + K 4 (1-exp(-t/τ 4)) K 4 = -3.2 τ 4=1.5936E-1 Thermal Resistance, Case to Sink Lubricated R ΘC-S Per Module.5 C/W.8.16 C/W C/W Revision Date: 12/4/22
4 CD mperes / Up to 16 5 Maximum On-State Forward Voltage Drop ( Tj = 125 C ) Maximum Transient Thermal Impedance (Junction to Case) On-State Voltage - Vtm Thermal Impedance - Rjc - C/W Instantaneous On-State Current - Itm - mperes Time - t - Seconds Max. Power Dissipation Per SCR - Watts_ Maximum On-State Power Dissipation (Sinusoidal Waveform) CONDUCTION NGLE verage On-State Current - It(av) - mperes Max. Case Temperature - Tcase - C_ Maximum llowable Case Temperature (Sinusoidal Waveform) CONDUCTION NGLE verage On-State Current - It(av) - mperes Maximum On-State Power Dissipation (Rectangular Waveform) Maximum llowable Case Temperature (Rectangular Waveform) Max. Power Dissipation Per SCR - Watts_ CONDUCTION NGLE verage On-State Current - It(av) - mperes Max. Case Temperature - Tcase - C_ CONDUCTION NGLE verage On-State Current - It(av) - mperes 36 Revision Date: 12/4/22
5 CD mperes / Up to 16 Powerex CD Pow-R-Blok 6-Pulse Bridge Total Power Dissipation vs Maximum Rated Output Current Rth S- (C/W) Total Power Dissipation (W) Total Power Dissipation (W) mbient Temperature (C) Maximum Bridge Output Current () Six-Pulse Bridge Circuit Total Power Dissipation & Maximum Rated Output Current With Sink to mbient Resistance of Heatsink as a Parameter. Revision Date: 12/4/22
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FAST SWITCHING THYRISTOR V DRM /V RRM = 2200 2400 V I T(AV) = 2500 A (T C = 80 C) I T(AV) = 3400 A (T C = 55 C) I TSM = 40 ka (T Vj = 125 C) Interdigitated amplifying gate Low on-state switching losses
More informationMCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationThyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A
Thyristor/Thyristor (MAGN-A-PAK Power Modules), 32 A MAGN-A-PAK PRIMARY CHARACTERISTICS I T(A) 32 A Type Modules - thyristor, standard Package MAGN-A-PAK FEATURES High voltage Electrically isolated base
More informationAAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A
AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 05 A FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Designed and qualified for industrial level
More informationSCR / SCR and SCR / Diode (MAGN-A-PAK Power Modules), 230 A
VSVSK.23..PbF Series SCR / SCR and SCR / Diode (MAGNAPAK Power Modules), 23 A PRODUCT SUMMARY I T(AV) 23 A Type Modules thyristor, standard Package MAGNAPAK Circuit configuration MAGNAPAK Two SCRs doubler
More informationMAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description
MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
More informationMCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
More informationTeccor brand Thyristors 8 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Lxx08xx & Qxx08xx & Qxx08xHx Series RoHS Description 8 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation
More informationVS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
VSVSK.36..PbF, VSVSK.42..PbF, VSVSK.62..PbF Series Thyristor/Diode and Thyristor/Thyristor, 35 A to 6 A (New INTAPAK Power Modules) PRODUCT SUMMARY I T(AV) 35 A to 6 A Type Modules Thyristor, Standard
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Phase Control Thyristors (Hockey PUK Version), 1745 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Designed and
More informationTeccor brand Thyristors 40 Amp Low T q SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV)
RoHS Description The S4040xQx series of s offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse circuits. These
More informationMT..KB SERIES 130 A 160 A THREE PHASE BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics. Bulletin I /97
MT..KB SERIES THREE PHASE BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case
More informationMCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
More informationFeatures. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
More informationR L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.
S602ECS RoHS Description This new.8 A sensitive gate SCR in an TO-92 package with a GAK pin out, offers a high static component series with a high static dv/dt and a low turn off (t q ) time by the use
More informationMCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationMAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
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Phase Control Thyristors (Hockey-PUK Version), 2310 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization:
More informationSymbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
(N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The (N) Family of Silicon Controlled Rectifiers
More informationPhase Control Thyristors (Stud Version), 330 A
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More informationMCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
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MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
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More informationnot Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
More informationBTA A Snubberless Triacs. Features. Description. I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma
20 A Snubberless Triacs Datasheet production data Features I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma Description G A2 A1 The Triacs use high performance glass passivated
More informationTwo Separated Thyristor Module, 100A ( Low Profile Package ) 14, 15 I T(AV) CHARACTERISTICS to to 150
NKTA Series Two Separated Thyristor Module, A ( Low Profile Package ) FEATURES High voltage RMS isolating voltage High surge capability Planar SCR chips Heat transfer and isolation through direct copper
More informationPhase Control Thyristors (Hockey PUK Version), 1350 A
Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case B-PUK (TO-200AC) Designed and qualified for industrial
More informationTeccor brand Thyristors 6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Lxx06xx & Qxx06xx & Qxx06xHx Series RoHS Description 6 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation
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Powerex General Purpose, Low Profile Rectifier Diode designed with high blocking voltage capability and low forward voltage drop to minimize conduction losses. These are packaged in hermetic, ceramic Pow-R-Disc
More informationMAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description
MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
More informationT2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
More informationMCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
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