T2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description

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1 T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and loadswitching applications. Features Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb Free Package is Available Pin Out Functional Diagram MT2 G TO 225AA CASE 77 STYLE 2 Additional Information Datasheet Resources Samples

2 Maximum Ratings (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) (T J = 25 to 110 C, Gate Open) V DRM, 200 V V RRM On-State RMS Current (T C = 70 C)(Full Cycle Sine Wave 50 to 60 Hz) I T (RMS) 2.5 A Peak Non Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, T C = 70 C) I TSM 25 A Circuit Fusing Considerations (t = 8.3 ms) I 2 t 2.6 A2s Peak Gate Power (Pulse Width 10 sec, T C = 70 C) P GM 10 W Average Gate Power (t = 8.3 msec, T A = 25 C) P GM (AV) 0.5 W Peak Gate Current (Pulse Width = 10 µs, T C = 70 C) I GM 0.5 A Operating Junction Temperature Rated V RRM and V DRM T J -40 to +110 C Storage Temperature Range T stg -40 to +150 C Mounting Torque (6-32 Screw) (Note 2) _ 8.0 in. lb. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Ambient PCB Mounted R 8JA 3.5 C/W Thermal Resistance, Junction to Tab Measured on MT2 Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum R 8JT 60 C/W T L 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.

3 Electrical Characteristics - OFF (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 3), V RRM ; Gate Open) T J = 25 C μa I DRM, T J = 110 C ma Electrical Characteristics - ON (T J = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 3) (I TM = ±10 A) V TM V Gate Trigger Current (Continuous dc) = 12 V, R L = 100 Ω, All Quadrants) I GT 10 ma Gate Trigger Voltage (Continuous dc) = 12 Vdc, R L = 100 Ω, T C = 25 C) V GT V Gate Non Trigger Voltage = 12 Vdc, R L = 100 Ω, T C = 110 C) Holding Current (VD = 12 V, IT (Initiating Current) = ±200 ma, Gate Open) V GD 0.15 V _ ma Gate Controlled Turn-On Time, I TM = 10 A pk, I G = 60 ma, tr = 0.1 sec) t gt _ µs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate-of-Rise of Off State Voltage, Exponential Waveform, T C = 100 C) dv/dt V/µs Critical Rate of Rise of On State Current, I TM = 3.5 A pk, Commutating di/dt = 1.26 A/ms, Gate Unenergized, T C = 90 C) di/dt _ A/µs 2. Pulse Width =1.0 ms, Duty Cycle 1%.

4 Voltage Current Characteristic of SCR Symbol Parameter +C urrent V DRM Peak Repetitive Forward Off State Voltage V TM Quadrant 1 MainTerminal 2 + I DRM Peak Forward Blocking Current I RRM at V RRM on state V RRM I RRM V TM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Quadrant 3 V TM off state I DRM at V DRM +V oltage Holding Current Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II GT (+) I GT Quadrant I I GT +I GT Quadrant III GT (+) I GT Quadrant IV MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to.

5 Dimensions Part Marking System U F C Q M H 13 2 K CASE 077 STYLE 5 V J G S D 2 PL 0.25 (0.010)BM A R M M 0.25 (0.010)BM A M M YWW T 2322BG Y= Year WW = Work Week T2322B= Device Code Dim Inches Millimeters Min Max Min Max A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V Pin Assignment 1 Main Terminal 1 2 Main Terminal 2 3 Gate Ordering Information Device Package Shipping T2322B T2322BG TO225AA TO225AA (Pb-Free) 500 Units/Box 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:

6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Littelfuse: T2322BG

C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description

C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability